US4244775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the chemical etch polishing of semiconductors
Assignee: AT&T Inc
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Filing: 1979-04-30
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Granted: 1981-01-13
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Expires: 1999-04-30
Abstract
Abstract A method for thinning and polishing semiconductor materials such as gallium arsenide is disclosed. This method utilizes a chemical etchant in conjunction with a grooved flat polishing plate. The polishing plate has a hardness greater than 2 on the mohs scale. High quality polished surfaces are obtained. Exemplary of polishing plate materials is quartz.
Inventors
- 👤 Lucian A. D'Asaro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:15
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/11; B24B37/20; B24B37/26; H; H10; H10P; H10P52/00; H10P52/40; H10P52/402
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
86 words
A method for treating a semiconductor body comprising transversing a plate with said semiconductor body in the presence of a composition which induces the removal of the treated surface of said semiconductor body CHARACTERIZED IN THAT said plate is composed of a material having a hardness greater than 2 on the mohs scale, said plate has grooves in the surface which allow said composition to wet the entire treated surface of said semiconductor body, and said composition comprises a chemical etchant substantially devoid of abrasive material.
Claim 2
Independent Claim
86 words
A method for treating a semiconductor body comprising transversing a plate with said semiconductor body in the presence of a composition which induces the removal of the treated surface of said semiconductor body CHARACTERIZED IN THAT said plate is composed of a material having a hardness greater than 2 on the mohs scale, said plate has grooves in the surface which allow said composition to wet the entire treated surface of said semiconductor body, and said composition comprises a chemical etchant substantially devoid of abrasive material.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said plate is composed of quartz.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein said chemical etchant comprises a H 2 O 2 /H 2 SO 4 /H 2 O solution.
Claim 5
Dependent Claim
11 words
The method of claim 1 wherein said semiconductor body comprises GaAs.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the hardness of said plate is greater than 6 on the mohs scale.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said grooves are arranged in an intersecting pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-01-13 | 1984-07-14 | 1985-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-01-13 | 1988-07-14 | 1989-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-01-13 | 1992-07-14 | 1993-01-13 | $7700.00 | Window Closed / Lapsed |