US4305974A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1980-08-08
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Granted: 1981-12-15
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Expires: 2000-08-08
Abstract
Abstract A semiconductor device with multilayer wirings can be produced with high yield by applying a liquid source for silicate film to a surface of a chemically vapor deposited insulating layer placed on a surface of the semiconductor substrate in order to provide a smoothed surface. After solidification of the liquid source, the substrate is subjected to a controlled etching to leave the same contour as the one of the smoothed surface on the resultant surface. An upper wiring layer is placed on the resultant smoothed surface in contact with a lower wiring layer through the insulating layer thereby decreasing disconnections in the upper wiring layer which could easily be caused by steep edges existing on an insulating surface layer of a conventional device.
Inventors
- 👤 Ryoji Abe
- 👤 Makoto Serigano
- 👤 Shuji Tabuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
245 words
A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a surface of a semiconductor substrate, forming a first conductive wiring layer on said first insulating layer, forming a second insulating layer on said first conductive wiring layer and said first insulating layer, the surface of said second insulating layer having irregularities, the thickness of said second insulating layer being greater than is required of such an insulating layer for insulation between two wiring layers, applying a liquid film material to the entire surface of said second insulating layer for providing a smoothed top surface thereover, then converting said liquid film material into a third insulating layer with said smoothed top surface, subjecting said smoothed top surface to etching means for removing a surface layer over said surface to result in a final smoothed top surface for receiving a second wiring layer, said etched layer comprising an upper portion of said second insulating layer, said final smoothed surface comprising portions of said third insulating layer in said surface irregularities of said second insulating layer, selectively removing said second insulating layer to form windows to expose portions of said first conductive wiring layer, including removal of any portions of said third insulating layer in any of said irregularities within said windows, and forming a second conductive wiring layer over said smoothed top surface in selective contact through said windows with said exposed portions of said first conductive wiring layer.
Claim 2
Independent Claim
245 words
A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a surface of a semiconductor substrate, forming a first conductive wiring layer on said first insulating layer, forming a second insulating layer on said first conductive wiring layer and said first insulating layer, the surface of said second insulating layer having irregularities, the thickness of said second insulating layer being greater than is required of such an insulating layer for insulation between two wiring layers, applying a liquid film material to the entire surface of said second insulating layer for providing a smoothed top surface thereover, then converting said liquid film material into a third insulating layer with said smoothed top surface, subjecting said smoothed top surface to etching means for removing a surface layer over said surface to result in a final smoothed top surface for receiving a second wiring layer, said etched layer comprising an upper portion of said second insulating layer, said final smoothed surface comprising portions of said third insulating layer in said surface irregularities of said second insulating layer, selectively removing said second insulating layer to form windows to expose portions of said first conductive wiring layer, including removal of any portions of said third insulating layer in any of said irregularities within said windows, and forming a second conductive wiring layer over said smoothed top surface in selective contact through said windows with said exposed portions of said first conductive wiring layer.
Claim 3
Dependent Claim
14 words
A method of claim 1, said etching means comprising a chemical etching liquid bath.
Claim 4
Dependent Claim
19 words
The method of claim 1, said etching means selectively comprising means for plasma etching, sputtering etching and ion etching.
Claim 5
Dependent Claim
13 words
The method of claim 1, said liquid film material comprising a silanol solution.
Claim 6
Dependent Claim
24 words
The method of claim 1, said second insulating layer comprising a phosphosilicate glass layer and said etching means comprises a chemical etching liquid bath.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-14 | 1985-06-15 | 1985-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-14 | 1989-06-15 | 1989-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-14 | 1993-06-15 | 1993-12-15 | $7700.00 | Window Closed / Lapsed |