US4123565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: Toshiba Corp
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Filing: 1976-12-09
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Granted: 1978-10-31
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Expires: 1996-12-09
Abstract
Abstract A semiconductor device comprises a semiconductor substrate, an insulating layer formed on one surface of the semiconductor substrate, a wiring layer formed on at least a portion of that area of the semiconductor substrate where no insulating layer is formed and having substantially the same thickness as that of the insulating layer, an insulating film formed flat on the insulating layer and wiring layer in a manner that it occupies grooves between the insulating layer and the wiring layer, an intermediate insulating layer formed on the insulating film, and another wiring layer formed on the intermediate insulating layer. The semiconductor device has a rupture-free multi-layer structure which exhibits an excellent electrical property.
Inventors
- 👤 Yasusuke Sumitomo
- 👤 Yoshie Ohashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6342; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/058; H10W20/40; H10W20/41; H10W20/435; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S438/00; Y10S438/937; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49158
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
134 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) forming a first insulating layer and a first wiring layer on one surface of a semiconductor substrate, said first wiring layer being formed on at least a portion of the one surface of the semiconductor substrate where the first insulating layer is not formed and having substantially the same thickness as that of the first insulating layer; (b) forming an insulating film flat on the first insulating and wiring layers by coating and then burning a liquid insulating material on the first insulating and wiring layers so that the liquid material occupies grooves between the first insulating and wiring layers; (c) forming an intermediate insulating layer on the insulating film; and (d) forming a second wiring layer on the intermediate insulating layer.
Claim 2
Independent Claim
134 words
A method for manufacturing a semiconductor device, comprising the steps of: (a) forming a first insulating layer and a first wiring layer on one surface of a semiconductor substrate, said first wiring layer being formed on at least a portion of the one surface of the semiconductor substrate where the first insulating layer is not formed and having substantially the same thickness as that of the first insulating layer; (b) forming an insulating film flat on the first insulating and wiring layers by coating and then burning a liquid insulating material on the first insulating and wiring layers so that the liquid material occupies grooves between the first insulating and wiring layers; (c) forming an intermediate insulating layer on the insulating film; and (d) forming a second wiring layer on the intermediate insulating layer.
Claim 3
Dependent Claim
25 words
A method according to claim 1 in which said insulating film is a silica film and said liquid insulating material is liquid containing silica particles.
Claim 4
Dependent Claim
18 words
A method according to claim 2 in which said silica film has a thickness of 1000 to 1500A.
Claim 5
Independent Claim
170 words
A method for manufacturing a semiconductor device, comprising the steps of (a) forming a first insulating layer and a first wiring layer on one surface of a semiconductor substrate, said first wiring layer being formed on at least a portion of the one surface of the semiconductor substrate where the first insulating layer is not formed and having substantially the same thickness as that of the first insulating layer; (b) forming an insulating film flat on the first wiring and insulating layers by coating and then burning a liquid insulating material on the first insulating and wiring layers so that the liquid material occupies grooves between the first insulating and wiring layer; (c) forming an intermediate insulating layer on the insulating film; (d) forming on the intermediate insulating layer at least one layer structure comprising an insulating layer, wiring layer, an insulating film and an intermediate insulating layer as formed above in steps (a), (b), and (c); and (e) forming another wiring layer on said at least one layer structure.
Claim 6
Independent Claim
170 words
A method for manufacturing a semiconductor device, comprising the steps of (a) forming a first insulating layer and a first wiring layer on one surface of a semiconductor substrate, said first wiring layer being formed on at least a portion of the one surface of the semiconductor substrate where the first insulating layer is not formed and having substantially the same thickness as that of the first insulating layer; (b) forming an insulating film flat on the first wiring and insulating layers by coating and then burning a liquid insulating material on the first insulating and wiring layers so that the liquid material occupies grooves between the first insulating and wiring layer; (c) forming an intermediate insulating layer on the insulating film; (d) forming on the intermediate insulating layer at least one layer structure comprising an insulating layer, wiring layer, an insulating film and an intermediate insulating layer as formed above in steps (a), (b), and (c); and (e) forming another wiring layer on said at least one layer structure.
Claim 7
Dependent Claim
25 words
A method according to claim 4, in which the insulating film is a silica film and the liquid insulating material is liquid containing silica particles.
Claim 8
Dependent Claim
18 words
A method according to claim 5, in which the silica film has a thickness of 1000 to 1500A.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-10-30 | 1982-05-01 | 1982-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-10-30 | 1986-05-01 | 1986-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-10-30 | 1990-05-01 | 1990-10-31 | $7700.00 | Window Closed / Lapsed |