Method of insulating multilevel conductors
Abstract
Abstract The present invention relates to a method of forming a thin stratified pinhole-free silicon dioxide insulator layer between multilevel conductors. Silicon dioxide films within the stratified pinhole-free silicon dioxide insulator layer are made from single drops of colloidal silicon dioxide liquid dispersion. These silicon dioxide films are stacked to form a stratified pinhole-free highly insulative silicon dioxide layer between the upper and lower conductors. The thinness of the stratified pinhole-free silicon dioxide insulator layer allows shallow contact windows to be formed therein. A shallow contact window allows reliable electrical contact therethrough between an upper conductor and a lower conductor.
Inventors
- 👤 Ronald L Koepp
- 👤 Janos Havas
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
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| 3.5 Years (Year 4) | 1975-05-16 | 1975-11-15 | 1976-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-16 | 1979-11-15 | 1980-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-16 | 1983-11-15 | 1984-05-16 | $7700.00 | Window Closed / Lapsed |