US5760475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Refractory metal-titanium nitride conductive structures
Assignee: GlobalFoundries Inc
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Filing: 1994-11-14
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Granted: 1998-06-02
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Expires: 2014-11-14
Abstract
Abstract The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.
Inventors
- 👤 John Edward Cronin
- 👤 Carter Welling Kaanta
- 👤 Michael Albert Leach
- 👤 Pei-Ing Paul Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/667; H10D64/668; H10W20/033; H10W20/056; H10W20/057; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
173 words
A conductive structure formed on a processed semiconductor substrate, comprising: a first layer of patterned metallurgy; a layer of passivating glass on said first layer of patterned metallurgy, said layer of passivating glass having an upper surface and having an opening therein to expose a portion of said first layer of patterned metallurgy; a continuous layer of Ti-TiN lining only said opening in electrical contact with said first layer of patterned metallurgy, said continuous layer of Ti-TiN having a lower surface consisting of Ti and an upper surface consisting of stoichiometric TiN, at least an upper half of said continuous layer of Ti-TiN consisting of TiN, a layer of tungsten on said continuous layer of Ti-TiN, said tungsten substantially filling the remainder of said opening such that no tungsten is present on said upper surface of said layer of passivating glass; and a second layer of patterned metallurgy in electrical contact with said layer of tungsten and, via said continuous layer of Ti-TiN, in electrical contact with said first layer of patterned metallurgy.
Claim 2
Dependent Claim
173 words
A conductive structure formed on a processed semiconductor substrate, comprising: a first layer of patterned metallurgy; a layer of passivating glass on said first layer of patterned metallurgy, said layer of passivating glass having an upper surface and having an opening therein to expose a portion of said first layer of patterned metallurgy; a continuous layer of Ti-TiN lining only said opening in electrical contact with said first layer of patterned metallurgy, said continuous layer of Ti-TiN having a lower surface consisting of Ti and an upper surface consisting of stoichiometric TiN, at least an upper half of said continuous layer of Ti-TiN consisting of TiN, a layer of tungsten on said continuous layer of Ti-TiN, said tungsten substantially filling the remainder of said opening such that no tungsten is present on said upper surface of said layer of passivating glass; and a second layer of patterned metallurgy in electrical contact with said layer of tungsten and, via said continuous layer of Ti-TiN, in electrical contact with said first layer of patterned metallurgy.
Claim 3
Dependent Claim
20 words
A conductive structure formed on a processed semiconductor substrate according to claim 1 wherein said passivating glass is borophosphosilicate glass.
Claim 4
Dependent Claim
20 words
A conductive structure formed on a processed semiconductor substrate according to claim 1 wherein said passivating glass is phosphosilicate glass.
References Cited (Backward Citations)
US3879746A
Cited
US4560421A
Cited
GB2104290A
Cited
US4520041A
Cited
US4570328A
Cited
EP0127281A1
Cited
US4562640A
Cited
JPS605560A
Cited
US4513905A
Cited
US4582563A
Cited
US4640004A
Cited
US4566026A
Cited
US4624864A
Cited
US4720908A
Cited
US4772571A
Cited
JPS61102059A
Cited
JPS61212041A
Cited
US4804636A
Cited
US4931411A
Cited
US5010032A
Cited
US5278099A
Cited
US4789648A
Cited
US4944836A
Cited
US4824802A
Cited
EP0267730A2
Cited
US4884123A
Cited
US4960732A
Cited
US5008730A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |