High-frequency wireless communication system on a single ultrathin silicon on sapphire chip

Claim 2

An analog electronic circuit having a substantially monotonic gain characteristic and negligible kink effect comprising: an electrically insulating substrate; a semiconductive silicon layer that is formed on the substrate and has a thickness of less than approximately 110 nanometers and an areal density of electrically active states less than approximately 5×10 11 cm -2 in regions which are not intentionally doped; and an analog field effect transistor element that is formed in the silicon layer and has a gate length of less than approximately 0.8 micrometers.

Claim 3

A circuit as in claim 1 in which the transistor element is configured as a transmission gate.

Claim 4

A circuit as in claim 1 in which the transistor element comprises a gate insulating layer having a thickness that is selected to limit offset voltage variations due to active states of less than approximately three millivolts.

Claim 5

A circuit as in claim 1 wherein said electrically insulating substrate further comprises sapphire.

Claim 6

An analog electronic circuit having a substantially monotonic gain characteristic and negligible kink effect comprising: an insulating substrate; a silicon layer formed on said insulating substrate wherein said silicon layer is less than approximately 1000 Å thick and is substantially free of electrically active states achieved by restricting all processing of said silicon layer to temperatures of less than or equal to approximately 950° C.; and an analog field effect transistor element that is formed in said silicon layer and has a gate length of less than approximately 0.8 micrometers.

Claim 7

An analog electronic circuit having a substantially monotonic gain characteristic and negligible kink effect comprising: an insulating substrate; a silicon layer formed on said insulating substrate wherein said silicon layer is less than approximately 1000 Å thick and is substantially free of electrically active states achieved by restricting all processing of said silicon layer to temperatures of less than or equal to approximately 950° C.; and an analog field effect transistor element that is formed in said silicon layer and has a gate length of less than approximately 0.8 micrometers.

Claim 8

An analog electronic circuit as defined in claim 5 wherein said insulating substrate comprises sapphire.

Claim 9

An analog electronic circuit as defined in claim 5 wherein said silicon layer has an areal density of electrically active states in regions which are not intentionally doped which is less than approximately 5×10 11 cm -2 .

Claim 10

An analog electronic circuit as defined in claim 5 wherein said analog field effect transistor element is configured as a transmission gate.

Claim 11

An analog electronic circuit as defined in claim 5 wherein said analog field effect transistor element further comprises a gate insulating layer having a thickness that is selected to limit offset voltage variations due to active states of less than approximately three millivolts.

Claim 12

An analog electronic circuit which includes an analog field effect transistor element that is formed in a silicon layer on a sapphire substrate wherein said silicon layer is less than approximately 270 nm thick and has an areal density of electrically active states in regions not intentionally doped which is less than approximately 5×10 11 cm -2 , said analog electronic circuit produced by the process comprising the steps of: epitaxially depositing said silicon layer on a surface of said sapphire substrate; implanting a given ion species into said silicon layer under such conditions that said implanted ions form a buried amorphous region in said silicon layer which extends substantially from said surface of said sapphire substrate into said silicon layer, thus leaving a surface layer of monocrystalline silicon covering said buried amorphous region; maintaining said silicon layer at or below a predetermined temperature which is substantially uniform throughout said silicon layer during said ion implanting step; annealing said silicon layer to induce solid phase epitaxial regrowth of said buried amorphous region using said surface layer of monocrystalline silicon as a crystallization seed; and performing all annealing and processing procedures at or below a temperature of approximately 950° C. thereby maintaining an areal density of electrically active states in regions of said silicon layer not intentionally doped which is less than approximately 5×10 11 cm -2 .

Claim 13

An analog electronic circuit which includes an analog field effect transistor element that is formed in a silicon layer on a sapphire substrate wherein said silicon layer is less than approximately 270 nm thick and has an areal density of electrically active states in regions not intentionally doped which is less than approximately 5×10 11 cm -2 , said analog electronic circuit produced by the process comprising the steps of: epitaxially depositing said silicon layer on a surface of said sapphire substrate; implanting a given ion species into said silicon layer under such conditions that said implanted ions form a buried amorphous region in said silicon layer which extends substantially from said surface of said sapphire substrate into said silicon layer, thus leaving a surface layer of monocrystalline silicon covering said buried amorphous region; maintaining said silicon layer at or below a predetermined temperature which is substantially uniform throughout said silicon layer during said ion implanting step; annealing said silicon layer to induce solid phase epitaxial regrowth of said buried amorphous region using said surface layer of monocrystalline silicon as a crystallization seed; and performing all annealing and processing procedures at or below a temperature of approximately 950° C. thereby maintaining an areal density of electrically active states in regions of said silicon layer not intentionally doped which is less than approximately 5×10 11 cm -2 .

Claim 14

An analog electronic circuit produced by the process defined in claim 10 wherein said step of maintaining said silicon layer at or below a predetermined temperature further includes selecting said predetermined temperature to be approximately zero degrees centigrade (0° C.).