US4766482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of making the same
Assignee: General Electric Co
•
Filing: 1986-12-09
•
Granted: 1988-08-23
•
Expires: 2006-12-09
Abstract
Abstract A semiconductor device having a layer of semiconductor material disposed on an insulating substrate is disclosed. A means is provided within the insulating substrate for minimizing the collection of radiation-induced charge carriers at the interface between the layer of semiconductor material and the insulating substrate. This means significantly reduces the accumulation of positive charges in the insulating substrate which would otherwise cause back-channel leakage when the device is operated after being irradiated. Also, the means minimizes the collection of charge carriers injected from the insulating substrate into the semiconductor device disposed on the insulating substrate. A method of fabricating this semiconductor device is also disclosed.
Inventors
- 👤 Ronald K. Smeltzer
- 👤 Alvin M. Goodman
- 👤 George L. Schnable
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3446; Y; Y10; Y10S; Y10S257/00; Y10S257/906; Y10S438/00; Y10S438/904; Y10S438/91
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
69 words
A semiconductor device, comprising: a layer of semiconductor material disposed on an insulating substrate; a plurality of recombination center means disposed within said insulating substrate for minimizing both the accumulation of charge carriers in said insulating substrate and the collection of charge carriers injected from said insulating substrate into said layer of semiconductor material; and a semiconductor structure disposed in said layer of semiconductor material directly above said means.
Claim 2
Dependent Claim
69 words
A semiconductor device, comprising: a layer of semiconductor material disposed on an insulating substrate; a plurality of recombination center means disposed within said insulating substrate for minimizing both the accumulation of charge carriers in said insulating substrate and the collection of charge carriers injected from said insulating substrate into said layer of semiconductor material; and a semiconductor structure disposed in said layer of semiconductor material directly above said means.
Claim 3
Dependent Claim
46 words
A semiconductor device according to claim 1, wherein said structure comprises: a gate oxide disposed on at least a portion of said layer of semiconductor material; a gate electrode disposed on said gate oxide; and source and drain regions disposed in said layer of semiconductor material.
Claim 4
Dependent Claim
32 words
A semiconductor device according to claim 1 wherein said insulating substrate is a material selected from the group consisting of sapphire and spinel and said layer of semiconductor material is single-crystalline silicon.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 1 wherein said means is disposed in only selected portions of said insulating substrate.
Claim 6
Dependent Claim
91 words
A semiconductor device, comprising: a layer of semiconductor single-crystalline silicon material disposed on an insulating substrate selected from the group consisting of sapphire and spinel; a recombination center means comprising dopants selected from the group consisting of chromium, iron and manganese and disposed within said insulating substrate for minimizing both the accumulation of charge carriers in said insulating substrate and the collection of charge carriers injected from said insulating substrate into said layer of semiconductor material; and a semiconductor structure disposed in said layer of semiconductor material directly above said means.
Claim 7
Dependent Claim
91 words
A semiconductor device, comprising: a layer of semiconductor single-crystalline silicon material disposed on an insulating substrate selected from the group consisting of sapphire and spinel; a recombination center means comprising dopants selected from the group consisting of chromium, iron and manganese and disposed within said insulating substrate for minimizing both the accumulation of charge carriers in said insulating substrate and the collection of charge carriers injected from said insulating substrate into said layer of semiconductor material; and a semiconductor structure disposed in said layer of semiconductor material directly above said means.
References Cited (Backward Citations)
US3909307A
Cited
US4183134A
Cited
US4135951A
Cited
US4177084A
Cited
US4348803A
Cited
JPS56112743A
Cited
US4328610A
Cited
JPS5799779A
Cited
JPS5799778A
Cited
US4469527A
Cited
US4509990A
Cited
JPS58151064A
Cited
US4523963A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |