US4348803A
Expired / Lapsed
US
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Process for producing a semiconductor device having an identification mark in an insulating substrate
Assignee: Fujitsu Ltd
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Filing: 1980-06-04
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Granted: 1982-09-14
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Expires: 2000-06-04
Abstract
Abstract In a process for producing a semiconductor device using an insulating substrate, a so called SOS device, a semiconductor layer is formed on the insulating film and semiconductor elements are formed in the semiconductor layer, material, which develops color with in the insulating substrate, is introduced in the substrate, and a color developed part of the insulating substrate is used as an identification mark of the substrate and the semiconductor elements. Cracking of the substrates due to formation of the identification mark is prevented.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:46
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/03; H10W; H10W46/00; H10W46/201; Y; Y10; Y10S; Y10S438/00; Y10S438/975
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
104 words
A process for producing a semiconductor device having a identification mark in an insulating substrate, said device including a semiconductor layer formed on said insulating substrate and semiconductor elements formed in said semiconductor layer, said process comprising the steps of: selecting said insulating substrate to be of sapphire or spinel; ion implanting a selected material into a selected part of said insulating substrate, said selected material comprising chromium or titanium; and completing the formation of said semiconductor device, wherein a selected one of said steps of ion implanting and completing the device formation includes a heating of said substrate for developing said identification mark.
Claim 2
Dependent Claim
104 words
A process for producing a semiconductor device having a identification mark in an insulating substrate, said device including a semiconductor layer formed on said insulating substrate and semiconductor elements formed in said semiconductor layer, said process comprising the steps of: selecting said insulating substrate to be of sapphire or spinel; ion implanting a selected material into a selected part of said insulating substrate, said selected material comprising chromium or titanium; and completing the formation of said semiconductor device, wherein a selected one of said steps of ion implanting and completing the device formation includes a heating of said substrate for developing said identification mark.
Claim 3
Dependent Claim
12 words
The process according to claim 1, wherein said semiconductor layer comprises silicon.
Claim 4
Dependent Claim
23 words
The process according to claim 1, wherein, during said ion implanting said selected material, said insulating substrate is heated to develop said color.
Claim 5
Dependent Claim
22 words
The process according to claim 3, wherein said heating provides heating for epitaxial growth of said semiconductor layer on the insulating substrate.
Claim 6
Dependent Claim
23 words
The process according to claim 3, wherein said heating is performed after an epitaxial growth of said semiconductor layer on said insulating substrate.
Claim 7
Dependent Claim
22 words
The process according to claim 1, wherein said selected part comprises a surface portion of said insulating substrate adjacent the periphery thereof.
Claim 8
Dependent Claim
15 words
The process according to claim 6, wherein the identification mark comprises at least one spot.
Claim 9
Dependent Claim
17 words
The process according to claim 7, wherein said identification mark comprises a binary coded series of spots.
Claim 10
Dependent Claim
16 words
The process according to claim 6, wherein said identification mark comprises at least one alphabetical letter.
Claim 11
Dependent Claim
39 words
The process of claim 6, wherein said selected material is introduced at at least one selected position of one surface of the insulating substrate, so as to enable identification of the front and rear surfaces of the insulating substrate.
Claim 12
Dependent Claim
20 words
The process according to claim 1, wherein said semiconductor elements have electrical properties that are identified by said identification mark.
Claim 13
Dependent Claim
23 words
The process according to claim 1, wherein said semiconductor device is produced in production lots that are respectively identified by said identification mark.
Claim 14
Dependent Claim
26 words
The process according to claim 1, wherein said semiconductor device is produced in production lines and on apparatuses that are respectively identified by said identification mark.
Claim 15
Dependent Claim
12 words
The process of claim 1, wherein said identification mark is optically detected.
Claim 16
Dependent Claim
29 words
The process of claim 14, wherein said controlling of the process is performed using a central processing unit connected to an optical detecting device for reading the identification mark.
Claim 17
Dependent Claim
28 words
The process of claim 1 or 2 wherein an epitaxial semiconductor film is formed on said substrate and said material is introduced by ion-implantation through said semiconductor film.
Claim 18
Dependent Claim
37 words
The process of claim 1 or 2 wherein said ion implantation comprises ion acceleration energy in the range from 50 to 150 KeV and a dosing amount of from 5×10 15 to 2×10 16 /cm 2 .
Claim 19
Dependent Claim
23 words
The process of claim 1 or 2, said chromium being doped into said sapphire substrate in a concentration of 0.1 to 3% molar.
Claim 20
Dependent Claim
22 words
The process of claim 1 or 2, said titanium being doped into said sapphire substrate in a concentration from 0.1 to 0.2%.
Claim 21
Dependent Claim
22 words
The process of claim 1, wherein one of the length and width of said identification mark is from 7 to 10 millimeters.
Claim 22
Dependent Claim
31 words
The process of claim 1, wherein said insulating substrate is heated at a temperature of 1200° C. for a period in the range of one hour to develop said identification mark.
Claim 23
Dependent Claim
31 words
The process of claim 18, wherein said insulating substrate is heated at a temperature of 1200° C. for a period in the range of one hour to develop said identification mark.
Claim 24
Dependent Claim
31 words
The process of claim 19, wherein said insulating substrate is heated at a temperature of 1200° C. for a period in the range of one hour to develop said identification mark.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-13 | 1986-03-15 | 1986-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-13 | 1990-03-15 | 1990-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-13 | 1994-03-15 | 1994-09-14 | $7700.00 | Window Closed / Lapsed |