Method for forming a deposited film

Claim 1

A method for forming a crystalline deposited film employing starting materials (A) and (B), comprising: (a) introducing one of the starting materials into a film forming space having a substrate therein to be adsorbed onto the substrate as an adsorption layer; said material being capable of selectively forming a crystal nucleus for a deposited film upon said substrate; said substrate having a first surface and a second surface on said first surface, said first surface being an amorphous material adapted to readily form crystal nuclei and having exposed areas at specific intervals through said second surface, said second surface having a reduced capacity to form crystal nuclei compared to said first surface, wherein the pressure of said film forming space is maintained within a range of 1×10 -7 Torr to 10 Torr; (b) evacuating said film forming space to adjust the pressure therein to a pressure within a range of 1×10 -10 torr to 1 Torr; and (c) introducing the other starting material into said film forming space after said adsorption layer is formed, to thereby cause a surface reaction on said adsorption layer to form said crystal nucleus on said first surface and to grow a crystalline deposited film from said crystal nucleus without adding heat to promote the reaction; said starting material (A) being a gaseous material for forming a deposited film; and said starting material (B) being a gaseous halogenic oxidizing agent capable of having an oxidative action on said starting material (A).

Claim 2

A method for forming a crystalline deposited film employing starting materials (A) and (B), comprising: (a) introducing one of the starting materials into a film forming space having a substrate therein to be adsorbed onto the substrate as an adsorption layer; said material being capable of selectively forming a crystal nucleus for a deposited film upon said substrate; said substrate having a first surface and a second surface on said first surface, said first surface being an amorphous material adapted to readily form crystal nuclei and having exposed areas at specific intervals through said second surface, said second surface having a reduced capacity to form crystal nuclei compared to said first surface, wherein the pressure of said film forming space is maintained within a range of 1×10 -7 Torr to 10 Torr; (b) evacuating said film forming space to adjust the pressure therein to a pressure within a range of 1×10 -10 torr to 1 Torr; and (c) introducing the other starting material into said film forming space after said adsorption layer is formed, to thereby cause a surface reaction on said adsorption layer to form said crystal nucleus on said first surface and to grow a crystalline deposited film from said crystal nucleus without adding heat to promote the reaction; said starting material (A) being a gaseous material for forming a deposited film; and said starting material (B) being a gaseous halogenic oxidizing agent capable of having an oxidative action on said starting material (A).