Method for forming deposited film

Claim 2

Method for forming a deposited film on a substrate in a film-forming space which comprises: (a) conducting a gaseous starting material for forming a deposited film and a gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 into the film-forming space; (b) effecting chemical contact between said gaseous starting material and said gaseous halogenic oxidizing agent in said film-forming space to form a plural number of precursors containing precursors in an excited state, wherein at least one of said precursors is the feeding source of the constituent element of said deposited film; and (c) depositing said film on said substrate without the use of external discharge energy in said film-forming space, wherein the step of effecting chemical contact is implemented (i) by employing a gas introducing conduit system having multiple concentric tubular conduits extending into said film-forming space, in which exit orifices of inner ones of said conduits adapted to carry at least said gaseous starting material are set back from an exit orifice of the outer of said conduits adapted to carry said gaseous halogenic oxidizing agent in order to enable the gaseous halogenic oxidizing agent to surround said gaseous starting material during introduction thereof into said film-forming space; and (ii) by spacing said substrate from 5 millimeters to 15 centimeters from said gas introducing conduit system.

Claim 3

The method according to claim 1, wherein the film formation is accompanied with luminescence.

Claim 4

The method according to claim 1, wherein said gaseous starting material is a chain silane compound.

Claim 5

The method according to claim 3, wherein said chain silane compound is a straight chain silane compound.

Claim 6

The method according to claim 4, wherein said straight chain silane compound is represented by the general formula Si n H 2n+2 (n is an integer of 1 to 8).

Claim 7

The method according to claim 3, wherein said chain silane compound is a branched chain silane compound.

Claim 8

The method according to claim 1, wherein said gaseous starting material is a silane compound haivng a cyclic structure of silicon.

Claim 9

The method according to claim 1, wherein said gaseous starting material is a chain germanium compound.

Claim 10

The method according to claim 8, wherein said chain germanium compound is represented by the general formula Ge m H 2m+2 (m is an integer of 1 to 5).

Claim 11

The method according to claim 1, wherein said gaseous starting material is a hydrogenated tin compound.

Claim 12

The method according to claim 1, wherein said gaseous starting material is a tetrahedral type compound.

Claim 13

The method according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.

Claim 14

The method according to claim 1, wherein said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.

Claim 15

Method for forming a deposited film on a substrate in a film-forming space which comprises: (a) conducting a gaseous starting material for forming a deposited film, a gaseous material (D) containing a component for valence electron control as a constituent, and a gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 into the film-forming space; (b) effecting chemical contact between said gaseous starting material, said gaseous material (D) containing a component for valence electron control as the constituent and said gaseous halogenic oxidizing agent in said film-forming space to form a plural number of precursors containing precursors in an excited state, wherein at least one of said precursors is the feeding source of the constituent element of said deposited film; and (c) depositing said film on said substrate without the use of external discharge energy in said film-forming space, wherein the step of effecting chemical contact is implemented (i) by employing a gas introducing conduit system having multiple concentric tubular conduits extending into said film-forming space, in which exit orifices of inner ones of said conduits adapted to carry said gaseous starting material and said gaseous material (D) containing a component for valence electron control as the constituent, respectively, are set back from the exit orifice of the outer of said conduits adapted to carry said gaseous halogenic oxidizing agent in order to enable the gaseous halogenic oxidizing agent to surround at least said gaseous starting material during introduction thereof into said film-forming space; and (ii) by spacing said substrate from 5 millimeters to 15 centimeters from the gas introducing conduit system.

Claim 16

Method for forming a deposited film on a substrate in a film-forming space which comprises: (a) conducting a gaseous starting material for forming a deposited film, a gaseous material (D) containing a component for valence electron control as a constituent, and a gaseous halogenic oxidizing agent selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 into the film-forming space; (b) effecting chemical contact between said gaseous starting material, said gaseous material (D) containing a component for valence electron control as the constituent and said gaseous halogenic oxidizing agent in said film-forming space to form a plural number of precursors containing precursors in an excited state, wherein at least one of said precursors is the feeding source of the constituent element of said deposited film; and (c) depositing said film on said substrate without the use of external discharge energy in said film-forming space, wherein the step of effecting chemical contact is implemented (i) by employing a gas introducing conduit system having multiple concentric tubular conduits extending into said film-forming space, in which exit orifices of inner ones of said conduits adapted to carry said gaseous starting material and said gaseous material (D) containing a component for valence electron control as the constituent, respectively, are set back from the exit orifice of the outer of said conduits adapted to carry said gaseous halogenic oxidizing agent in order to enable the gaseous halogenic oxidizing agent to surround at least said gaseous starting material during introduction thereof into said film-forming space; and (ii) by spacing said substrate from 5 millimeters to 15 centimeters from the gas introducing conduit system.

Claim 17

The method according to claim 14, wherein the film formation is accompanied with luminescence.

Claim 18

The method according to claim 14, wherein said gaseous starting material is a chain silane compound.

Claim 19

The method according to claim 16, wherein said chain silane compound is a straight chain silane compound.

Claim 20

The method according to claim 17, wherein said straight chain silane compound is represented by the general formula Si n H 2n+2 (n is an integer of 1 to 8).

Claim 21

The method according to claim 16, wherein said chain silane compound is a branched chain silane compound.

Claim 22

The method according to claim 14, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.

Claim 23

The method according to claim 14, wherein said gaseous starting material is a chain germanium compound.

Claim 24

The method according to claim 21, wherein said chain germanium compound is represented by the general formula Ge m H 2m+2 (m is an integer of 1 to 5).

Claim 25

The method according to claim 14, wherein said gaseous starting material is a hydrogenated tin compound.

Claim 26

The method according to claim 14, wherein said gaseous starting material is a tetrahedral type compound.

Claim 27

The method according to claim 14, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material, said gaseous halogenic oxidizing agent and said gaseous material (D) are introduced into said reaction space.

Claim 28

The method according to claim 14, wherein said gaseous starting material, said gaseous halogenic oxidizing agent and said gaseous material (D) are introduced into said reaction space through a transporting pipe of a multi-tubular structure.

Claim 31

The method according to claim 27, wherein said gaseous starting material is a chain silane compound.

Claim 32

The method according to claim 28, wherein said chain silane compound is a straight chain silane compound.

Claim 33

The method according to claim 29, wherein said straight chain silane compound is represented by the general formula Si n H 2n+2 (n is an integer of 1 to 8).

Claim 34

The method according to claim 28, wherein said chain silane compound is a branched chain silane compound.

Claim 35

The method according to claim 27, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.

Claim 36

The method according to claim 27, wherein said gaseous starting material is a chain germanium compound.

Claim 37

The method according to claim 33, wherein said chain germanium compound is represented by the general formula Ge m H 2m+2 (m is an integer of 1 to 5).

Claim 38

The method according to claim 27, wherein said gaseous starting material is a hydrogenated tin compound.

Claim 39

The method according to claim 27, wherein said gaseous starting material is a tetrahedral type compound.

Claim 40

The method according to claim 27, wherein said gaseous halogenic oxidizing agent contains fluorine gas.

Claim 41

The method according to claim 27, wherein said gaseous halogenic oxidizing agent contains chlorine gas.

Claim 42

The method according to claim 27, wherein said gaseous halogenic oxidizing agent is a gas containing fluorine atoms as the constituents.

Claim 43

The method according to claim 27, wherein said gaseous halogenic oxidizing agent contains a halogen under nascent state.

Claim 44

The method according to claim 27, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.

Claim 45

The method according to claim 27, wherein said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.