UST954009I4
Expired / Lapsed
US
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Method for the thermal oxidation of silicon with added chlorine
Assignee: International Business Machines Corp
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Filing: 1975-07-16
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Granted: 1977-01-04
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Expires: 1995-07-16
Abstract
Abstract the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer.
Inventors
- 👤 Konrad Malin
- 👤 Dietrich Seybold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-04 | 1980-07-05 | 1981-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-04 | 1984-07-05 | 1985-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-04 | 1988-07-05 | 1989-01-04 | $7700.00 | Window Closed / Lapsed |