Method for forming thin film multi-layer structure member

Claim 1

A method for forming a thin film multi-layer structure on a substrate in a deposition space (A) having at least a first layer of semiconductor thin film controlled in valence electron and at least a second layer of semiconductor thin film regulated in band gap, which comprises: forming at least one of said first and second thin film layers on said substrate by separately introducing by a first gas introducing conduit system a precurs (B) formed in a decomposition space (B) which becomes the semiconductor starting material for said at least one of said first and second thin film layers and an active species (C) formed in a decomposition space (C) capable of a chemical reaction with said precursor (B) into said deposition space (A) to form a mixture and effect chemical contact therebetween and thereby effect the formation of said at least one said first and second thin film layers; forming at least the other of said first and second thin film layers by introducing by a second gas introducing conduit system a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action on said gaseous semiconductor starting material (a) into said deposition space (A) to form a mixture and effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state and thereby effect the formation of said other of said first and second thin film layers using at least one of said precursors as the feeding source for the constituent element of said other of said first and second thin film layers; said second gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material (a), said coaxially aligned conduits extending into the deposition space (A) such that the exit orifices of the inner conduits are set back from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material (a) exiting said inner conduit, said substrate positioned from several millimeters to 20 centimeters from the exit orifice of said outer conduit; introducing into said deposition space (A) during the formation of said first layer, a substance which includes a valence electron controller so as to form a semiconductor thin film controlled in valence electron; and introducing into said deposition space (A) during the formation of said second layer, a substance which includes a band gap regulator so as to form a semiconductor thin film regulated in band gap.

Claim 2

A method for forming a thin film multi-layer structure on a substrate in a deposition space (A) having at least a first layer of semiconductor thin film controlled in valence electron and at least a second layer of semiconductor thin film regulated in band gap, which comprises: forming at least one of said first and second thin film layers on said substrate by separately introducing by a first gas introducing conduit system a precurs (B) formed in a decomposition space (B) which becomes the semiconductor starting material for said at least one of said first and second thin film layers and an active species (C) formed in a decomposition space (C) capable of a chemical reaction with said precursor (B) into said deposition space (A) to form a mixture and effect chemical contact therebetween and thereby effect the formation of said at least one said first and second thin film layers; forming at least the other of said first and second thin film layers by introducing by a second gas introducing conduit system a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action on said gaseous semiconductor starting material (a) into said deposition space (A) to form a mixture and effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state and thereby effect the formation of said other of said first and second thin film layers using at least one of said precursors as the feeding source for the constituent element of said other of said first and second thin film layers; said second gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material (a), said coaxially aligned conduits extending into the deposition space (A) such that the exit orifices of the inner conduits are set back from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material (a) exiting said inner conduit, said substrate positioned from several millimeters to 20 centimeters from the exit orifice of said outer conduit; introducing into said deposition space (A) during the formation of said first layer, a substance which includes a valence electron controller so as to form a semiconductor thin film controlled in valence electron; and introducing into said deposition space (A) during the formation of said second layer, a substance which includes a band gap regulator so as to form a semiconductor thin film regulated in band gap.