Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent

Claim 1

A method for forming a deposited film on a substrate in a reaction space comprising: introducing into a reaction space using a gas introducing conduit system (a) a gaseous starting material for formation of a deposited film, and (b) a gaseous halogenic oxidizing agent capable of oxidizing said starting material; said gaseous starting material being selected from the group consisting of compounds containing a Group III element, compounds containing a Group V element, and mixtures thereof; said gaseous halogenic oxidizing agent being selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material, said coaxially aligned conduits extending into the film forming space such that the exit orifices of the inner conduits are set back from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material exiting said inner conduit, said substrate positioned from 5 millimeters to 15 centimeters from the exit orifice of said outer conduit; allowing said gaseous starting material and said gaseous halogenic oxidizing agent to contact each other thereby forming a plurality of precursors including precursors in an exicted state; and forming said deposited film on said substrate without the use of external discharge energy in the reaction space using at least one of said precursors.

Claim 2

A method for forming a deposited film on a substrate in a reaction space comprising: introducing into a reaction space using a gas introducing conduit system (a) a gaseous starting material for formation of a deposited film, and (b) a gaseous halogenic oxidizing agent capable of oxidizing said starting material; said gaseous starting material being selected from the group consisting of compounds containing a Group III element, compounds containing a Group V element, and mixtures thereof; said gaseous halogenic oxidizing agent being selected from the group consisting of F 2 , Cl 2 , Br 2 and I 2 said gas introducing conduit system including a plurality of coaxially aligned conduits each having an exit orifice with an outer conduit adapted to carry said gaseous halogenic oxidizing agent and at least one inner conduit adapted to carry said gaseous starting material, said coaxially aligned conduits extending into the film forming space such that the exit orifices of the inner conduits are set back from the exit orifice of the outer conduit to enable the gaseous halogenic oxidizing agent in the outer conduit to surround the gaseous starting material exiting said inner conduit, said substrate positioned from 5 millimeters to 15 centimeters from the exit orifice of said outer conduit; allowing said gaseous starting material and said gaseous halogenic oxidizing agent to contact each other thereby forming a plurality of precursors including precursors in an exicted state; and forming said deposited film on said substrate without the use of external discharge energy in the reaction space using at least one of said precursors.