Process for forming deposited film

Claim 1

A process for forming a silicon containing polycrystalline film on a substrate in a film forming space which comprises: (a) arranging said substrate having an exposed surface which has a crystal orientability with a specific face direction in said film forming space; (b) forming said silicon containing polycrystalline film on said exposed surface of said substrate by separately introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and halogen in a first activation space separate from said film forming space and an activated substance (B) formed in a second activation space separate from said film forming space from a chemical species (B) for film formation which is chemically mutually reactive with said activated species (A) to form a mixture and effect a chemical reaction therebetween to thereby effect the formation of the polycrystalline deposited film, said polycrystalline deposited film having a film growth surface; and (c) exposing the film growth surface of the polycrystalline deposited film to a gaseous substance (E) capable of effecting an etching action thereon and thereby effecting crystal growth in a specific face direction wherein said gaseous substance (E) is irradiated with light energy to enhance its activity.