US4353777A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective plasma polysilicon etching
Assignee: LFE Corp
•
Filing: 1981-04-20
•
Granted: 1982-10-12
•
Expires: 2001-04-20
Abstract
Abstract A process for etching polysilicon material preferentially over silicon oxide. The process is anisotropic and employs a moderate to low pressure of Freon 11 (CFCl3) in an RF plasma discharge. In a second embodiment helium is mixed with the Freon 11 to inhibit degradation of the photoresist mask.
Inventors
- 👤 Adir Jacob
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 16:39
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
54 words
Process for selectively etching polysilicon material comprising the steps of: (a) placing polysilicon material within a reactor chamber, and (b) exposing said polysilicon material within the chamber to a gas plasma at a pressure between 50 and 150 microns Hg for etching, wherein said gas plasma consists essentially of RF discharge CFCl 3 .
Claim 2
Dependent Claim
54 words
Process for selectively etching polysilicon material comprising the steps of: (a) placing polysilicon material within a reactor chamber, and (b) exposing said polysilicon material within the chamber to a gas plasma at a pressure between 50 and 150 microns Hg for etching, wherein said gas plasma consists essentially of RF discharge CFCl 3 .
Claim 3
Dependent Claim
18 words
A process in accordance with claim 1 wherein said polysilicon material is a polysilicon layer over silicon oxide.
Claim 4
Dependent Claim
29 words
A process in accordance with claim 1 wherein power is supplied to said gas plasma at a rate between 0.2 and 2 watts per centimeter squared of power density.
Claim 5
Dependent Claim
19 words
A process in accordance with claim 1 wherein a carrier gas of helium is added to the etchant gas.
Claim 6
Dependent Claim
74 words
A process for fabrication of a semiconductor device having a polysilicon layer and a silicon oxide layer including the step of preferential etching of said polysilicon layer, where said preferential etching of said polysilicon layer comprises the steps of, (a) placing said semiconductor device within a reactor chamber, (b) exposing said semiconductor device within said reaction chamber to etchant gas consisting essentially of CFCl 3 at a pressure between 50 and 150 microns Hg.
Claim 7
Dependent Claim
74 words
A process for fabrication of a semiconductor device having a polysilicon layer and a silicon oxide layer including the step of preferential etching of said polysilicon layer, where said preferential etching of said polysilicon layer comprises the steps of, (a) placing said semiconductor device within a reactor chamber, (b) exposing said semiconductor device within said reaction chamber to etchant gas consisting essentially of CFCl 3 at a pressure between 50 and 150 microns Hg.
Claim 8
Dependent Claim
49 words
A process in accordance with claim 5 wherein said polysilicon layer is to be etched with a line pattern characterized by widths of less than 4 microns and wherein said plasma is supplied power at a rate of between 0.2 and 2 watts per centimeter square of power density.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-11 | 1986-04-12 | 1986-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-11 | 1990-04-12 | 1990-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-11 | 1994-04-12 | 1994-10-12 | $7700.00 | Window Closed / Lapsed |