US4162210A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for covering a first layer or layer sequence situated on a substrate with an additional second layer by a sputtering-on process
Assignee: Siemens AG
•
Filing: 1978-01-26
•
Granted: 1979-07-24
•
Expires: 1998-01-26
Abstract
Abstract A method is disclosed for eliminating under-etchings. In a substrate having a lower silicon dioxide layer thereon, a polysilicon layer on the silicon dioxide layer, and an upper silicon dioxide layer on the polysilicon layer, an etched window provided in the layers has first under-etchings formed at an edge of the lower silicon dioxide layer adjacent the substrate and a second under-etching formed at an edge of the polysilicon layer. A sputtering source is provided with a given target voltage. A grid potential is applied to the substrate wherein the grid potential is between one-tenth and one-third of the target voltage. A layer is then sputter deposited in the etching window for filling in the first under-etching by re-emission from the surface of the substrate and for sloping the edge of the polysilicon layer at the second under-etching. An overhanging portion of the upper silicon dioxide layer is also removed at the second under-etching by re-emission during the sputter deposition.
Inventors
- 👤 Hans-Raimund Deppe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:03
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10P50/263; H10P50/28; H10P50/282; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
79 words
A method for covering a first layer means comprising an etched structure situated on a substrate and having under-etchings with a second layer by means of sputter depositing material from a high frequency sputtering source with a given target voltage, comprising the steps of: applying a grid potential to the substrate during said sputter depositing in order to fill the under-etchings, said grid potential amounting to between one-tenth and one-third of the target voltage applied to the sputtering source.
Claim 2
Independent Claim
79 words
A method for covering a first layer means comprising an etched structure situated on a substrate and having under-etchings with a second layer by means of sputter depositing material from a high frequency sputtering source with a given target voltage, comprising the steps of: applying a grid potential to the substrate during said sputter depositing in order to fill the under-etchings, said grid potential amounting to between one-tenth and one-third of the target voltage applied to the sputtering source.
Claim 3
Dependent Claim
52 words
A method in accordance with claim 1, including the steps of applying a first grid potential to the substrate; and altering the grid potential during the sputter depositing process such that the re-emission rate for the sputter deposited material decreases relative to the re-emission rate during application of said first grid potential.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1, including the step of depositing an additional layer of material after the sputter deposition process by means of a CVD process.
Claim 5
Dependent Claim
27 words
A method in accordance with claim 1, including the step of depositing an additional layer after the sputter deposition process by means of a thermal oxidation process.
Claim 6
Dependent Claim
25 words
A method in accordance with claim 1, wherein the sputter deposited material fills in under-etchings adjacent to the substrate and slopes under-etchings above the substrate.
Claim 7
Independent Claim
164 words
A method for eliminating under-etchings wherein a substrate is provided having a lower SiO 2 layer thereon, a polysilicon layer on the SiO 2 layer, and an upper SiO 2 layer on the polysilicon layer, an etched window in the layers, a first under-etching being formed at an edge of the lower SiO 2 layer in the etched window, and a second under-etching being formed at an edge of the polysilicon layer in the etched window, comprising the steps of: providing a sputtering source with a given target voltage; and applying a grid potential to the substrate, said grid potential amounting to between one-tenth and one-third of the target voltage; sputter depositing a layer in the etching window for filling in the first under-etching by re-emission from the surface of the substrate, sloping the edge of the polysilicon layer at the second under-etching, and removing an overhanging portion of the upper silicon dioxide layer at the second under-etching by re-emission during the sputter depositing.
Claim 8
Independent Claim
164 words
A method for eliminating under-etchings wherein a substrate is provided having a lower SiO 2 layer thereon, a polysilicon layer on the SiO 2 layer, and an upper SiO 2 layer on the polysilicon layer, an etched window in the layers, a first under-etching being formed at an edge of the lower SiO 2 layer in the etched window, and a second under-etching being formed at an edge of the polysilicon layer in the etched window, comprising the steps of: providing a sputtering source with a given target voltage; and applying a grid potential to the substrate, said grid potential amounting to between one-tenth and one-third of the target voltage; sputter depositing a layer in the etching window for filling in the first under-etching by re-emission from the surface of the substrate, sloping the edge of the polysilicon layer at the second under-etching, and removing an overhanging portion of the upper silicon dioxide layer at the second under-etching by re-emission during the sputter depositing.
Claim 9
Dependent Claim
35 words
The method of claim 6, including the further step of reducing the grid potential on the substrate after said sputter depositing and sputter depositing an additional layer in the etching window at the reduced potential.
Claim 10
Dependent Claim
14 words
The method of claim 6 in which the sputter deposited layer is silicon dioxide.
Claim 11
Dependent Claim
13 words
The method of claim 6 in which the sputter deposited layer is polysilicon.
Claim 12
Dependent Claim
15 words
The method of claim 6 in which the sputter deposited layer is a conductor path.
Claim 13
Independent Claim
102 words
A method for eliminating under-etchings wherein a structure is provided comprising a substrate having a lower layer and an upper layer, an under-etching being formed at a lateral edge of the lower layer adjacent the substrate in an etched window through the lower and upper layers, comprising the steps of: providing a sputtering source with a given target voltage; applying a grid potential to the substrate, said grid potential amounting to between one-tenth and one-third of the target voltage; and sputter depositing on a layer in the etched window for filling in the under-etching by re-emission from the surface of the substrate.
Claim 14
Independent Claim
102 words
A method for eliminating under-etchings wherein a structure is provided comprising a substrate having a lower layer and an upper layer, an under-etching being formed at a lateral edge of the lower layer adjacent the substrate in an etched window through the lower and upper layers, comprising the steps of: providing a sputtering source with a given target voltage; applying a grid potential to the substrate, said grid potential amounting to between one-tenth and one-third of the target voltage; and sputter depositing on a layer in the etched window for filling in the under-etching by re-emission from the surface of the substrate.
References Cited (Backward Citations)
US4036723A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-23 | 1983-01-22 | 1983-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-23 | 1987-01-22 | 1987-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-23 | 1991-01-22 | 1991-07-24 | $7700.00 | Window Closed / Lapsed |