US4190488A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching method using noble gas halides
Assignee: International Business Machines Corp
•
Filing: 1978-08-21
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Granted: 1980-02-26
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Expires: 1998-08-21
Abstract
Abstract A method for etching using a noble gas halide.
Inventors
- 👤 Harold F. Winters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:01
CPC Classifications
C; C01; C01B; C01B23/00; C01B23/0005; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
32 words
A method for etching a surface comprising exposing the surface to be etched to at least one noble gas halide for a sufficient time to etch said surface to the desired extent.
Claim 2
Independent Claim
32 words
A method for etching a surface comprising exposing the surface to be etched to at least one noble gas halide for a sufficient time to etch said surface to the desired extent.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said halide is a fluoride.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein said noble gas halide is a fluorinated xenon compound.
Claim 5
Dependent Claim
37 words
The method of claim 1 wherein said noble gas halide is selected from the group of XeF 2 , XeF 4 , XeF 6 , KrF 2 , KrF 4 , KrF 6 , and mixtures thereof.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said noble gas halide is XeF 2 .
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein all of the constituents of the surface are capable of forming volatile substances.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said surface is silicon or polycrystalline silicon.
Claim 9
Dependent Claim
10 words
The method of claim 1 wherein said surface is titanium.
Claim 10
Dependent Claim
10 words
The method of claim 1 wherein said surface is molybdenum.
Claim 11
Dependent Claim
10 words
The method of claim 1 wherein said surface is tantalum.
Claim 12
Dependent Claim
13 words
The method of claim 1 wherein the etching is carried out under vacuum.
Claim 13
Dependent Claim
23 words
The method of claim 1 wherein the etching is carried out at a pressure of about 10 -4 torr to about 1 torr.
Claim 14
Dependent Claim
24 words
The method of claim 1 wherein the etching is carried out at a pressure of about 10 -3 torr to about 10 -2 torr.
Claim 15
Dependent Claim
12 words
The method of claim 1 wherein a plasma etching process is employed.
Claim 16
Dependent Claim
12 words
The method of claim 1 wherein a sputter etching process is employed.
Claim 17
Dependent Claim
21 words
The method of claim 1 wherein said noble gas halide is passed through at least one capillary tube to said surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-25 | 1983-08-27 | 1984-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-25 | 1987-08-27 | 1988-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-25 | 1991-08-27 | 1992-02-26 | $7700.00 | Window Closed / Lapsed |