US4778692A
Expired / Lapsed
US
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Process for forming deposited film
Assignee: Canon Inc
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Filing: 1986-02-20
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Granted: 1988-10-18
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Expires: 2006-02-20
Abstract
Abstract A process for forming a deposited film, which comprises introducing into a film forming space for formation of a deposited film on a substrate an active species (A) formed by decomposition of a compound containing silicon and a halogen and an active species (B) formed from a germanium containing compound for film formation which is chemically mutually reactive with said active species (A) separately from each other, and then permitting the above respective active species and said germanium containing compounds to react chemically with each other by excitation by irradiation of light energy thereby to form a deposited film on the above substrate.
Inventors
- 👤 Shunichi Ishihara
- 👤 Shigeru Ohno
- 👤 Masahiro Kanai
- 👤 Shunri Oda
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/24; H10P14/2922; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
113 words
A process for forming a deposited film comprising separately introducing an active species (A) and and active species (B) into a film forming space for formation of a deposited film on a substrate, said active species (A) being formed by decomposing a compound containing silicon and a halogen; and said active species (B) being formed by decomposing a germanium containing compound for film formation which is chemically mutually reactive with said active species (A); and irradiating both said active species (A) and active species (B) with light energy and allowing both active species (A) and active species (B) to react chemically with each other thereby to form a deposited film of the substrate.
Claim 2
Dependent Claim
113 words
A process for forming a deposited film comprising separately introducing an active species (A) and and active species (B) into a film forming space for formation of a deposited film on a substrate, said active species (A) being formed by decomposing a compound containing silicon and a halogen; and said active species (B) being formed by decomposing a germanium containing compound for film formation which is chemically mutually reactive with said active species (A); and irradiating both said active species (A) and active species (B) with light energy and allowing both active species (A) and active species (B) to react chemically with each other thereby to form a deposited film of the substrate.
Claim 3
Dependent Claim
126 words
A process according to claim 1, wherein said compound containing silicon and a halogen is selected from the group consisting of: (a) chain silicon halides represented by Si.sub.u Y.sub.2u+2 wherein u is an integer of 1 or more, and Y is selected from the group consisting of F, Cl, Br, I and mixtures thereof; (b) cyclic silicon halides represented by Si.sub.v Y.sub.2v wherein v is an integer of 3 or more, and Y is as defined above; (c) chain compounds represented by Si.sub.u H.sub.x Y.sub.y wherein u is an integer of 1 or more, Y is as defined above, and x+y=2u+2; and (d) cyclic compounds represented by Si.sub.u H.sub.x Y.sub.y wherein Y is as defined above, u is an integer of 3 or more, and x+y=2u.
Claim 4
Dependent Claim
119 words
A process according to claim 1, wherein said germanium compound is selected from the group consisting of: (a) chain hydrogenated germanium compounds represented by Ge.sub.a H.sub.b wherein a is an integer of 1 or more and b=2a+2; (b) cyclic hydrogenated germanium compounds represented by Ge.sub.a H.sub.b wherein a is an integer of 3 or more and b=2a; (c) polymers of said chain and of said cyclic hydrogenated germanium compounds; (d) partially and wholly halogen substituted compounds of said chain and of said cyclic hydrogenated germanium compounds; and (e) compounds of said chain and of said cyclic hydrogenated germanium compounds in which a part or all of the hydrogen atoms are substituted by organic groups, halogen atoms or mixtures thereof.
Claim 5
Dependent Claim
29 words
A process according to claim 1, wherein active species (A) and active species (B) are introduced into the film forming space in a ratio ranging from 10:1 to 1:10.
Claim 6
Dependent Claim
38 words
A process according to claim 1, further comprising introducing into the film forming space at least one starting compound selected from the group consisting of hydrogen gas, halogen compounds, inert gases, silicon containing compounds, and carbon containing compounds.
Claim 7
Dependent Claim
113 words
A process for forming a deposited film comprising separately introducing an active species (A) and and active species (B) into a film forming space for formation of a deposited film on a substrate, said active species (A) being formed by decomposing a compound containing silicon and a halogen; and said active species (B) being formed by decomposing a germanium containing compound for film formation which is chemically mutually reactive with said active species (A); and applying heat energy to both said active species (A) and active species (B) and allowing both active species (A) and active species (B) to chemically react with each other thereby to form a deposited film on the substrate.
Claim 8
Dependent Claim
113 words
A process for forming a deposited film comprising separately introducing an active species (A) and and active species (B) into a film forming space for formation of a deposited film on a substrate, said active species (A) being formed by decomposing a compound containing silicon and a halogen; and said active species (B) being formed by decomposing a germanium containing compound for film formation which is chemically mutually reactive with said active species (A); and applying heat energy to both said active species (A) and active species (B) and allowing both active species (A) and active species (B) to chemically react with each other thereby to form a deposited film on the substrate.
Claim 9
Dependent Claim
127 words
A process according to claim 6, wherein said compound containing silicon and a halogen is selected from the group consisting of: (a) chain silicon halides represented by Si.sub.u Y.sub.2u+2 where in u is an integer of 1 or more, and Y is selected from the group consisting of F, Cl, Br, I and mixtures thereof; (b) cyclic silicon halides represented by Si.sub.v Y.sub.2v wherein v is an integer of 3 or more, and Y is as defined above; (c) chain compounds represented by Si.sub.u H.sub.x Y.sub.y wherein u is an integer of 1 or more, Y is as defined above, and x+y=2u+2; and (d) cyclic compounds represented by Si.sub.u H.sub.x Y.sub.y wherein Y is as defined above, u is an integer of 3 or more, and x+y=2u.
Claim 10
Dependent Claim
119 words
A process according to claim 6, wherein said germanium compound is selected from the group consisting of: (a) chain hydrogenated germanium compounds represented by Ge.sub.a H.sub.b wherein a is an integer of 1 or more and b=2a+2; (b) cyclic hydrogenated germanium compounds represented by Ge.sub.a H.sub.b wherein a is an integer of 3 or more and b=2a; (c) polymers of said chain and of said cyclic hydrogenated germanium compounds; (d) partially and wholly halogen substituted compounds of said chain and of said cyclic hydrogenated germanium compounds; and (e) compounds of said chain and of said cyclic hydrogenated germanium compounds in which a part or all of the hydrogen atoms are substituted by organic groups, halogen atoms or mixtures thereof.
Claim 11
Dependent Claim
29 words
A process according to claim 6, wherein active species (A) and active species (B) are introduced into the film forming space in a ratio ranging from 10:1 to 1:10.
Claim 12
Dependent Claim
38 words
A process according to claim 6, further comprising introducing into the film forming space at least one starting compound selected from the group consisting of hydrogen gas, halogen compounds, inert gases, silicon containing compounds, and carbon containing compounds.
Claim 13
Dependent Claim
43 words
A process according to claim 1 or 6, further comprising introducing into the film forming space an active species (PN) for introducing an impurity element into the deposited film; said active species (PN) being formed by activating a compound containing said impurity element.
Claim 14
Dependent Claim
101 words
A process according to claim 11, wherein said compound containing said impurity element is selected from the group consisting of PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 5 , SbF 3 , BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 , B 6 H 12 , and AlCl 3 .
Claim 15
Dependent Claim
131 words
A process according to claim 1 or 6, wherein said germanium containing compound is selected from the group consisting of GeH 4 , Ge 2 H 6 , Ge 3 H 8 , n-Ge 4 H 10 , tert-Ge 4 H 10 , Ge 3 H 6 , Ge 5 H 10 , GeH 3 F, GeH 3 Cl, GeH 2 F 2 , H 6 Ge 6 F 6 , Ge(CH 3 ) 4 , Ge(C 2 H 5 ) 4 , Ge(C 6 H 5 ) 4 , CH 3 GeH 3 , (CH 3 ) 2 GeH 2 , (CH 3 ) 3 GeH, (C 2 H 5 ) 2 GeH 2 , Ge(CH 3 ) 2 F, GeF 2 , GeF 4 , GeS, and mixtures thereof.
Claim 16
Dependent Claim
104 words
A process according to claim 1 or 6, wherein said compound containing silicon and a halogen is selected from the group consisting of SiF 4 , (SiF 2 ) 5 , (SiF 2 ) 6 , (SiF 2 ) 4 , Si 2 F 6 , Si 3 F 8 , SiHF 3 , SiH 2 F 2 , SiCl 4 , (SiCl 2 ) 5 , SiBr 4 , (SiBr 2 ) 5 , Si 2 Cl 6 , Si 2 Br 6 , SiHCl 3 , SiHBr 3 , SiHI 3 , Si 2 Cl 3 F 3 , and mixtures thereof.
Claim 17
Dependent Claim
17 words
A process according to claim 5 or 10 wherein said starting compound is a straight-chain silane compound.
Claim 18
Dependent Claim
49 words
A process according to claim 15, wherein said straight-chain silane compound is selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 , Si 5 H 12 , Si 6 H 14 , and mixtures thereof.
Claim 19
Dependent Claim
17 words
A process according to claim 5 or 10, wherein said starting compound is a branch-chain silane compound.
Claim 20
Dependent Claim
48 words
A process according to claim 17, wherein said branch-chain silane compound is selected from the group consisting of SiH 3 SiH(SiH 3 )SiH 3 , SiH 3 SiH(SiH 3 )Si 3 H 7 , Si 2 H 5 SiH(SiH 3 )Si 2 H 5 , and mixtures thereof.
Claim 21
Dependent Claim
17 words
A process according to claim 5 or 10 wherein said starting compound is a cyclic silane compound.
Claim 22
Dependent Claim
41 words
A process according to claim 19, wherein said cyclic silane compound is selected from the group consisting of Si 3 H 6 , Si 4 H 8 , Si 5 H 10 , Si 6 H 12 , and mixtures thereof.
Claim 23
Dependent Claim
38 words
A process according to claim 5 or 10, wherein said starting compound is a carbon containing compound selected from the group consisting of methane, ethane, propane, n-butane, pentane, ethylene, propylene, butene-1, butene-2, isobutylene, pentene, acetylene, methylacetylene and butyne.
References Cited (Backward Citations)
US4084024A
Cited
US4217374A
Cited
US4471042A
Cited
US4448801A
Cited
US4410559A
Cited
US4468443A
Cited
US4450185A
Cited
US4419381A
Cited
US4468413A
Cited
US4439463A
Cited
US4466992A
Cited
US4517223A
Cited
US4532199A
Cited
US4554180A
Cited
US4569697A
Cited
US4567127A
Cited
US4546008A
Cited
US4564533A
Cited
US4514437A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-18 | 1992-04-18 | 1992-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-18 | 1996-04-18 | 1996-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-18 | 2000-04-18 | 2000-10-18 | $7700.00 | Window Closed / Lapsed |