Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
171 words
A process for forming a deposited film which comprises: (a) the step of arranging a substrate having a portion comprising a material which becomes the crystal nucleus for formation of a deposited film or a material capable of forming selectively said crystal nucleus into a film forming space for formation of a deposited film; (b) the film forming step of introducing an . activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween and form a deposited film on said substrate; (c) the step of exposing the deposited film growth surface to a gaseous substance having etching action on the deposited film to be formed during the film forming step to apply etching action on said deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 2
Dependent Claim
171 words
A process for forming a deposited film which comprises: (a) the step of arranging a substrate having a portion comprising a material which becomes the crystal nucleus for formation of a deposited film or a material capable of forming selectively said crystal nucleus into a film forming space for formation of a deposited film; (b) the film forming step of introducing an . activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween and form a deposited film on said substrate; (c) the step of exposing the deposited film growth surface to a gaseous substance having etching action on the deposited film to be formed during the film forming step to apply etching action on said deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.
Claim 3
Dependent Claim
28 words
A process according to claim 1, wherein the activated species (A) from the actuation space (A) is selected from those having a life of at least 0.1 second.
Claim 4
Dependent Claim
19 words
A process according to claim 2, wherein the activated species (A) have a life of at least 1 second.
Claim 5
Dependent Claim
19 words
A process according to claim 3, wherein the activated species (A) have a life of at least 10 second.
Claim 6
Dependent Claim
36 words
A process according to any preceding claim, wherein the compound containing silicon and halogen to be introduced into the activation space (A) is a chain or cyclic silane compound at least partially substituted with halogen atoms.
Claim 7
Dependent Claim
27 words
A process according to any preceding claim, wherein the chemical substance for forming active species (B) in the activation space (B) is hydrogen and/or a halogen gas.
Claim 8
Dependent Claim
18 words
A process according to claim 6, wherein an inert gas is also introduced into the activation space (B).
Claim 9
Dependent Claim
31 words
A process according to any preceding claim, wherein the gaseous substance having etching action is a halogen, a halogen compound, or activated species formed from a halogen or a halogen compound.
Claim 10
Dependent Claim
27 words
A process according to any preceding claim, wherein the gaseous substance having etching action is formed as a product of the reaction in the film forming step.