Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric

Claim 2

A process for forming a nonvolatile random-access-memory cell comprising the steps of: forming a word line over a semiconductor substrate; forming a first doped region, a second doped region, a third doped region, and a fourth doped region within the substrate, wherein the first, second, third, and fourth doped regions are spaced apart from one another; forming an insulating layer over the word line and doped regions; forming a first electrode layer over the insulating layer; forming a metal-oxide dielectric layer over the first electrode layer; forming a second electrode layer over the metal-oxide dielectric layer; patterning the first electrode, metal-oxide dielectric, and second electrode layers to form a first ferroelectric capacitor, a second ferroelectric capacitor, and a drive line; forming a first opening and a second opening, wherein: the first opening extends through the first ferroelectric capacitor and the insulating layer; and the second opening extends through the second ferroelectric capacitor and the insulating layer; forming a first conductive member and a second conductive member, wherein: the first conductive member electrically connects the second electrode layer of the first ferroelectric capacitor to the first doped region via the first opening; and the second conductive member electrically connects the second electrode layer of the second ferroelectric capacitor to the second doped region via the second opening; and forming a first bit line and a second bit line, wherein: the first bit line is electrically connected to the third doped region; and the second bit line is electrically connected to the fourth doped region.

Claim 3

The process of claim 1, further comprising a step of forming a first insulating spacer and a second insulating spacer, wherein: the first and second insulating spacers are formed between the step of forming the first and second openings and the step of forming the first and second conductive members; the first insulating spacer is formed to lie within the first opening; and the second insulating spacer is formed to lie within the second opening.

Claim 4

The process of claim 2, wherein the first and second insulating spacers include a material selected from a group consisting of a refractory metal oxide and magnesium oxide.

Claim 5

The process of claim 1, wherein the step of patterning the first electrode, metal-oxide dielectric, and second electrode layers is performed such that portions of the first electrode, metal-oxide dielectric, and second electrode layers of the first and second ferroelectric capacitors overlie portions of the word line.

Claim 6

The process of claim 1, wherein the step of patterning the first electrode, metal-oxide dielectric, and second electrode layers and the step of forming the first and second bit lines are performed such that a length of the drive line is perpendicular to lengths of the first and second bit lines.

Claim 7

The process of claim 1, wherein the metal-oxide dielectric layer includes a material selected from a group consisting of barium strontium titanate, barium titanate, bismuth titanate, lead zirconate titanate, and lanthanum-doped lead zirconate titanate.

Claim 8

A process for forming a nonvolatile random-access-memory cell comprising the steps of: forming a first well region having a first conductivity type within a semiconductor substrate having a second conductivity type that is opposite the first conductivity type; forming a first word line and a second word line, wherein: the first word line is formed over the first well region; and the second word line is formed over a portion of the substrate outside of the first well region; forming a first doped region, a second doped region, a third doped region, a fourth doped region within the first well region and adjacent to the first word line, wherein the first, second, third, and fourth doped regions have the second conductivity type and are spaced apart from one another; forming a fifth doped region, a sixth doped region, a seventh doped region, an eighth doped region within the portion of the substrate outside of the first well region and adjacent to the second word line, wherein the fifth, sixth, seventh, and eighth doped regions have the first conductivity type and are spaced apart from one another; forming an insulating layer over the word lines and doped regions; forming a first electrode layer over the insulating layer; forming a metal-oxide dielectric layer over the first electrode layer; forming a second electrode layer over the metal-oxide dielectric layer; patterning the first electrode, metal-oxide dielectric, and second electrode layers to form a first ferroelectric capacitor, a second ferroelectric capacitor, and a drive line; forming a first opening, a second opening, a third opening, and a fourth opening, wherein: the first opening extends through the first ferroelectric capacitor and the insulating layer and overlies the first doped region; the second opening extends through the second ferroelectric capacitor and the insulating layer and overlies the third doped region; the third opening extends through the first ferroelectric capacitor and the insulating layer and overlies the fifth doped region; and the fourth opening extends through the second ferroelectric capacitor and the insulating layer and overlies the seventh doped region; forming a first conductive member, a second conductive member, a third conductive member, and a fourth conductive member, wherein: the first conductive member electrically connects the second electrode layer of the first ferroelectric capacitor to the first doped region via the first opening; and the second conductive member electrically connects the second electrode layer of the second ferroelectric capacitor to the third doped region via the second opening; and the third conductive member electrically connects the second electrode layer of the first ferroelectric capacitor to the fifth doped region via the third opening; and the fourth conductive member electrically connects the second electrode layer of the second ferroelectric capacitor to the seventh doped region via the fourth opening; and forming a first bit line and a second bit line, wherein: the first bit line is electrically connected to the second and sixth doped regions; and the second bit line is electrically connected to the fourth and eighth doped regions.

Claim 9

A process for forming a nonvolatile random-access-memory cell comprising the steps of: forming a first well region having a first conductivity type within a semiconductor substrate having a second conductivity type that is opposite the first conductivity type; forming a first word line and a second word line, wherein: the first word line is formed over the first well region; and the second word line is formed over a portion of the substrate outside of the first well region; forming a first doped region, a second doped region, a third doped region, a fourth doped region within the first well region and adjacent to the first word line, wherein the first, second, third, and fourth doped regions have the second conductivity type and are spaced apart from one another; forming a fifth doped region, a sixth doped region, a seventh doped region, an eighth doped region within the portion of the substrate outside of the first well region and adjacent to the second word line, wherein the fifth, sixth, seventh, and eighth doped regions have the first conductivity type and are spaced apart from one another; forming an insulating layer over the word lines and doped regions; forming a first electrode layer over the insulating layer; forming a metal-oxide dielectric layer over the first electrode layer; forming a second electrode layer over the metal-oxide dielectric layer; patterning the first electrode, metal-oxide dielectric, and second electrode layers to form a first ferroelectric capacitor, a second ferroelectric capacitor, and a drive line; forming a first opening, a second opening, a third opening, and a fourth opening, wherein: the first opening extends through the first ferroelectric capacitor and the insulating layer and overlies the first doped region; the second opening extends through the second ferroelectric capacitor and the insulating layer and overlies the third doped region; the third opening extends through the first ferroelectric capacitor and the insulating layer and overlies the fifth doped region; and the fourth opening extends through the second ferroelectric capacitor and the insulating layer and overlies the seventh doped region; forming a first conductive member, a second conductive member, a third conductive member, and a fourth conductive member, wherein: the first conductive member electrically connects the second electrode layer of the first ferroelectric capacitor to the first doped region via the first opening; and the second conductive member electrically connects the second electrode layer of the second ferroelectric capacitor to the third doped region via the second opening; and the third conductive member electrically connects the second electrode layer of the first ferroelectric capacitor to the fifth doped region via the third opening; and the fourth conductive member electrically connects the second electrode layer of the second ferroelectric capacitor to the seventh doped region via the fourth opening; and forming a first bit line and a second bit line, wherein: the first bit line is electrically connected to the second and sixth doped regions; and the second bit line is electrically connected to the fourth and eighth doped regions.

Claim 10

The process of claim 7, further comprising a step of forming a first insulating spacer, a second insulating spacer, a third insulating spacer, and a fourth insulating spacer, wherein: the first, second, third, and fourth insulating spacers are formed between the step of forming the first, second, third, and fourth openings and the step of forming the first, second, third, and fourth conductive members; the first insulating spacer is formed to lie within the first opening; and the second insulating spacer is formed to lie within the second opening; the third insulating spacer is formed to lie within the third opening; and the fourth insulating spacer is formed to lie within the fourth opening.

Claim 11

The process of claim 8, wherein the first, second, third, and fourth insulating spacers include a material selected from a group consisting of a refractory metal oxide and magnesium oxide.

Claim 12

The process of claim 7, wherein the step of pattering the first electrode, metal-oxide dielectric, and second electrode layers is performed such that portions of the first electrode, metal-oxide dielectric, and second electrode layers of the first and second ferroelectric capacitors overlie portions of the first and second word lines.

Claim 13

The process of claim 7, wherein the step of patterning the first electrode, metal-oxide dielectric, and second electrode layers and the step of forming the first and second bit lines are performed such that a length of the drive line is perpendicular to lengths of the first and second bit lines.