Integrated distributed inductive-capacitive network

Claim 2

An integrated-distributed-inductive-capacitive network, comprising: a Zirconium Titinate integrated capacitor including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; an electrode formed on the dielectric layer; a conductive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the conductive layer.

Claim 3

An integrated-distributed-inductive-capacitive network, comprising: a Zirconium Titanate integrated capacitor including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the higher resistivity layer; an insulating layer formed on the high resistivity layer, the insulating layer comprising a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; a metal electrode formed on a portion of the insulating layer; a conductive layer formed on the insulating layer; and a plurality of metal electrodes formed on the conductive layer.

Claim 4

An integrated-distributed-inductive-capacitive network, comprising: a Zirconium Titanate integrated capacitor including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the higher resistivity layer; an insulating layer formed on the high resistivity layer, the insulating layer comprising a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; a metal electrode formed on a portion of the insulating layer; a conductive layer formed on the insulating layer; and a plurality of metal electrodes formed on the conductive layer.

Claim 5

An integrated distributed inductive-capacitive network having a control input, a common line and two signal lines, comprising: a Zirconium Titinate integrated capacitor, including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; an electrode formed on the dielectric layer and coupled to the control line; a first contact plate coupled to the common line; a conductive layer formed over the integrated capacitor; and a plurality of contact terminals coupled to the conductive layer and providing the two signal lines.

Claim 6

An integrated distributed inductive-capacitive network having a control input, a common line and two signal lines, comprising: a Zirconium Titinate integrated capacitor, including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; an electrode formed on the dielectric layer and coupled to the control line; a first contact plate coupled to the common line; a conductive layer formed over the integrated capacitor; and a plurality of contact terminals coupled to the conductive layer and providing the two signal lines.

Claim 7

A communication device, comprising: receiver means for receiving radio communication signals, the means for receiving having at least one integrated electronically tunable distributed inductive-capacitive network, the integrated network including: a Zirconium Titinate integrated capacitor, including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; an electrode formed on the dielectric layer; a conductive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of contact terminals coupled to the conductive layer.

Claim 8

A communication device, comprising: receiver means for receiving radio communication signals, the means for receiving having at least one integrated electronically tunable distributed inductive-capacitive network, the integrated network including: a Zirconium Titinate integrated capacitor, including: a semiconductor having a substrate and a layer of semi-conductive material of a higher resistivity than the substrate; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, said insulating layer being a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductor; an electrode formed on the dielectric layer; a conductive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of contact terminals coupled to the conductive layer.