US3644850A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit band pass filter
Assignee: International Business Machines Corp
•
Filing: 1969-06-11
•
Granted: 1972-02-22
•
Expires: 1989-06-11
Abstract
Abstract A semiconductor band pass filter is disclosed. The filter is an integrated circuit device having a semiconductor layer with a ground plane on one face and an insulating layer and an overlying conductive line on the other face. The semiconductor layer includes near the insulating layer a highly doped region which may have substantially the same pattern as the conductive line. The passed band can be selected by varying the doping level of the doped region.
Inventors
- 👤 Irving T Ho
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:33
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/20; H01P1/201
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
142 words
A semiconductor device having a layer of semiconductor material having a predetermined conductivity, a ground plane on one face of the layer, an insulating layer on the other face of the semiconductor layer, and a conductive line overlying the insulating layer, wherein the improvement comprises, a higher conductivity region of said predetermined conductivity type formed between said insulating layer and said ground plane and adjacent said insulating layer to have relatively high capacitive coupling to said line and relatively low capacitive coupling to said ground plane and substantially conductively isolated from said line, and having a resistivity value to provide a preselected frequency response for the device, said semiconductor layer having a thickness selected to establish a selected value of inductance for said line, and said region of semiconductor material having generally the shape of said conductive line and underlying said line.
Claim 2
Dependent Claim
142 words
A semiconductor device having a layer of semiconductor material having a predetermined conductivity, a ground plane on one face of the layer, an insulating layer on the other face of the semiconductor layer, and a conductive line overlying the insulating layer, wherein the improvement comprises, a higher conductivity region of said predetermined conductivity type formed between said insulating layer and said ground plane and adjacent said insulating layer to have relatively high capacitive coupling to said line and relatively low capacitive coupling to said ground plane and substantially conductively isolated from said line, and having a resistivity value to provide a preselected frequency response for the device, said semiconductor layer having a thickness selected to establish a selected value of inductance for said line, and said region of semiconductor material having generally the shape of said conductive line and underlying said line.
Claim 3
Dependent Claim
43 words
A device according to claim 1 in which said line has a tortuous shape with relatively long parallel sections and relatively short connecting sections, and said region of semiconductor material is located under selected ones of said short connecting sections of said line.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-02-21 | 1975-08-23 | 1976-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-02-21 | 1979-08-23 | 1980-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-02-21 | 1983-08-23 | 1984-02-22 | $7700.00 | Window Closed / Lapsed |