Patent US5401614A successfully refreshed from Google Patents.
US5401614A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mid and deep-UV antireflection coatings and methods for use thereof
Assignee: International Business Machines Corp
•
Filing: 1993-02-16
•
Granted: 1995-03-28
•
Expires: 2013-02-16
Abstract
Abstract An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.
Inventors
- 👤 Robert R. Dichiara
- 👤 James T. Fahey
- 👤 Pamela E. Jones
- 👤 Christopher F. Lyons
- 👤 Wayne M. Moreau
- 👤 Ratnam Sooriyakumaran
- 👤 Gary T. Spinillo
- 👤 Kevin M. Welsh
- 👤 Robert L. Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 23:40
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; Y; Y10; Y10S; Y10S522/00; Y10S522/904
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
151 words
A method of making a relief image by photolithography comprising the steps of: (a) applying, to a lithographic substrate, a layer of an antireflective coating composition comprising a polymer selected from the group consisting of poly(vinylnaphthalenes), poly(acenaphthalenes) and poly(vinylbiphenyls), wherein said layer has an optical density of at least 2.0/μm at one or more wavelengths in the range from about 235 to about 280 nm, and wherein said layer is substantially inert to contact reactions with a chemically amplified photoresist composition, and wherein said layer is insoluble in the developer for the chemically amplified photoresist composition; and (b) applying, over the antireflective coating composition, a layer of a chemically amplified photoresist composition; and (c) exposing the photoresist composition to form a latent image; and (d) developing the latent image to form a relief image pattern in the photoresist; and (e) dry etching the relief image pattern into the antireflective coating layer.
Claim 2
Independent Claim
151 words
A method of making a relief image by photolithography comprising the steps of: (a) applying, to a lithographic substrate, a layer of an antireflective coating composition comprising a polymer selected from the group consisting of poly(vinylnaphthalenes), poly(acenaphthalenes) and poly(vinylbiphenyls), wherein said layer has an optical density of at least 2.0/μm at one or more wavelengths in the range from about 235 to about 280 nm, and wherein said layer is substantially inert to contact reactions with a chemically amplified photoresist composition, and wherein said layer is insoluble in the developer for the chemically amplified photoresist composition; and (b) applying, over the antireflective coating composition, a layer of a chemically amplified photoresist composition; and (c) exposing the photoresist composition to form a latent image; and (d) developing the latent image to form a relief image pattern in the photoresist; and (e) dry etching the relief image pattern into the antireflective coating layer.
Claim 3
Dependent Claim
33 words
The method of claim 1 additionally comprising the step of heating the antireflective coating layer to a temperature in excess of the glass transition temperature of the polymer of the antireflective coating composition.
Claim 4
Dependent Claim
58 words
The method of claim 1 wherein the polymer of the antireflective coating composition is further characterized as having a glass transition temperature higher than the temperature to which the chemically amplified photoresist is heated, and additionally comprising the step of: after applying a layer of said chemically amplified photoresist composition, the step of heating the chemically amplified photoresist.
Claim 5
Dependent Claim
28 words
The method of claim 3 additionally comprising the step of: after exposing the photoresist composition to form a latent image, the step of heating the chemically amplified photoresist.
Claim 6
Dependent Claim
58 words
The method of claim 1 wherein the polymer of the antireflective coating composition is further characterized as having a glass transition temperature higher than the temperature to which the chemically amplified photoresist is heated, and additionally comprising the step of: after exposing the photoresist composition to form a latent image, the step of heating the chemically amplified photoresist.
References Cited (Backward Citations)
US3642480A
Cited
US4137365A
Cited
US4208083A
Cited
US4405707A
Cited
US4592993A
Cited
US4362809A
Cited
US4370405A
Cited
US4623609A
Cited
US4491628A
Cited
US4910122A
Cited
EP0159428A1
Cited
US4822718A
Cited
EP0264650A1
Cited
US4515886A
Cited
US4587203A
Cited
US4529685A
Cited
US4644025A
Cited
US4609614A
Cited
US4759990A
Cited
US4746596A
Cited
US4758305A
Cited
US4761464A
Cited
US4855199A
Cited
US4871646A
Cited
US5110697A
Cited
US5057399A
Cited
US5126289A
Cited
US5271803A
Cited
US5234990A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-27 | 1998-09-26 | 1999-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-27 | 2002-09-26 | 2003-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-27 | 2006-09-26 | 2007-03-28 | $7700.00 | Window Closed / Lapsed |