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Mid and deep-UV antireflection coatings and methods for use thereof

Assignee: International Business Machines Corp
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Filing: 1993-02-16
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Granted: 1995-03-28
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Expires: 2013-02-16
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Abstract

Abstract An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Inventors

  • 👤 Robert R. Dichiara
  • 👤 James T. Fahey
  • 👤 Pamela E. Jones
  • 👤 Christopher F. Lyons
  • 👤 Wayne M. Moreau
  • 👤 Ratnam Sooriyakumaran
  • 👤 Gary T. Spinillo
  • 👤 Kevin M. Welsh
  • 👤 Robert L. Wood

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 20:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; Y; Y10; Y10S; Y10S522/00; Y10S522/904

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 151 words
A method of making a relief image by photolithography comprising the steps of: (a) applying, to a lithographic substrate, a layer of an antireflective coating composition comprising a polymer selected from the group consisting of poly(vinylnaphthalenes), poly(acenaphthalenes) and poly(vinylbiphenyls), wherein said layer has an optical density of at least 2.0/μm at one or more wavelengths in the range from about 235 to about 280 nm, and wherein said layer is substantially inert to contact reactions with a chemically amplified photoresist composition, and wherein said layer is insoluble in the developer for the chemically amplified photoresist composition; and (b) applying, over the antireflective coating composition, a layer of a chemically amplified photoresist composition; and (c) exposing the photoresist composition to form a latent image; and (d) developing the latent image to form a relief image pattern in the photoresist; and (e) dry etching the relief image pattern into the antireflective coating layer.
Claim 2
Independent Claim 151 words
A method of making a relief image by photolithography comprising the steps of: (a) applying, to a lithographic substrate, a layer of an antireflective coating composition comprising a polymer selected from the group consisting of poly(vinylnaphthalenes), poly(acenaphthalenes) and poly(vinylbiphenyls), wherein said layer has an optical density of at least 2.0/μm at one or more wavelengths in the range from about 235 to about 280 nm, and wherein said layer is substantially inert to contact reactions with a chemically amplified photoresist composition, and wherein said layer is insoluble in the developer for the chemically amplified photoresist composition; and (b) applying, over the antireflective coating composition, a layer of a chemically amplified photoresist composition; and (c) exposing the photoresist composition to form a latent image; and (d) developing the latent image to form a relief image pattern in the photoresist; and (e) dry etching the relief image pattern into the antireflective coating layer.
Claim 3
Dependent Claim 33 words
The method of claim 1 additionally comprising the step of heating the antireflective coating layer to a temperature in excess of the glass transition temperature of the polymer of the antireflective coating composition.
Claim 4
Dependent Claim 58 words
The method of claim 1 wherein the polymer of the antireflective coating composition is further characterized as having a glass transition temperature higher than the temperature to which the chemically amplified photoresist is heated, and additionally comprising the step of: after applying a layer of said chemically amplified photoresist composition, the step of heating the chemically amplified photoresist.
Claim 5
Dependent Claim 28 words
The method of claim 3 additionally comprising the step of: after exposing the photoresist composition to form a latent image, the step of heating the chemically amplified photoresist.
Claim 6
Dependent Claim 58 words
The method of claim 1 wherein the polymer of the antireflective coating composition is further characterized as having a glass transition temperature higher than the temperature to which the chemically amplified photoresist is heated, and additionally comprising the step of: after exposing the photoresist composition to form a latent image, the step of heating the chemically amplified photoresist.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-03-27 1998-09-26 1999-03-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-03-27 2002-09-26 2003-03-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-03-27 2006-09-26 2007-03-28 $7700.00 Window Closed / Lapsed

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