EP0264650A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Anti-reflective coating
Assignee: Brewer Science Inc
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Filing: 1984-04-13
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Granted: —
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Expires: 2004-04-13
Abstract
Abstract A light absorbing medium to be interposed under photosensitive layers, such as a photoresist for integrated circuit "chips" to eliminate defects caused by reflected light, has a polybutene sulphone vehicle which can penetrate into small depressions of a substrate and form a thin, smooth and uniform coating. The coating includes a light absorbing dye. This light absorbing layer is imageable in the process. The light absorbing material eliminates many of the defects caused by reflected light resulting in increased sharpness of the images in the photoresist. The material reduces the losses due to defects and increases the yield of usable product.
Inventors
- 👤 John W. Arnold
- 👤 Terry L. Brewer
- 👤 Sumalee Punyakumleard
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:26
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
63 words
A photolithographic resist comprising a substrate, a photoresist and a light-absorbing imageable anti-reflective coating between said substrate and said photoresist, characterized in that said anti-reflective coating is a thin, essentially continuous layer of a polybutene sulphone containing a dye, the anti-reflective coating being imageable by light of the same wavelength as the photoresist is imageable and being developable and removable with the photoresist.
Claim 2
Dependent Claim
63 words
A photolithographic resist comprising a substrate, a photoresist and a light-absorbing imageable anti-reflective coating between said substrate and said photoresist, characterized in that said anti-reflective coating is a thin, essentially continuous layer of a polybutene sulphone containing a dye, the anti-reflective coating being imageable by light of the same wavelength as the photoresist is imageable and being developable and removable with the photoresist.
Claim 3
Dependent Claim
13 words
A resist according to Claim 1, wherein the anti-reflective coating is wet etchable.
Claim 4
Dependent Claim
13 words
A resist according to Claim 1, wherein the anti-reflective coating is dry etchable.
Claim 5
Dependent Claim
44 words
A resist according to Claim 1, wherein the anti-reflective coating contains at least one dye selected from curcumin and its derivatives and equivalents, bixin and its derivatives and equivalents, coumarin derivatives and equivalents and equivalent organic halogenated, hydroxylated and carboxylated dyes and combinations thereof.
Claim 6
Dependent Claim
67 words
A process for preparing a photolithographic resist as claimed in any one of the preceding Claims, in which the anti-reflective coating is deposited and fixed to the substrate by depositing on the substrate a continuous layer of a solution of said polybutene sulphone and baking the product to remove said solvent and fix the resin to the substrate, wherein said solvent is a low surface energy solvent.
Claim 7
Dependent Claim
30 words
A process according to Claim 5, in which said solvent is an alcohol, an aromatic hydrocarbon, a ketone or an ester or a mixture of any two or more thereof.
Claim 8
Dependent Claim
18 words
A process according to Claim 5 or Claim 6, wherein the photoresist and anti-reflective layer are simultaneously imaged.
Claim 9
Dependent Claim
20 words
A process according to any one of Claims 5 to 7, wherein the photoresist and anti-reflective layer are developed simultaneously.
Claim 10
Dependent Claim
87 words
A process for making an integrated circuit element by photolithography in which a pattern is imaged in the photoresist and anti-reflective coating of a resist as claimed in any one of Claims 1 to 4, the anti-reflective coating imaging with the photoresist, developing and removing the developed image from the photoresist and anti-reflective coating, the imaged anti-reflective coating developing with and being removed with the photoresist, and etching a pattern defined by the imaged anti-reflective coating and photoresist into the substrate to produce said integrated circuit element.
Claim 11
Dependent Claim
33 words
A solution of polybutene sulphone and a photolithographic dye in a solvent which is an alcohol, an aromatic hydrocarbon, a ketone or an ester or a mixture of any two or more thereof.
Claim 12
Dependent Claim
33 words
A solution of polybutene sulphone and a photolithographic dye in a solvent which is an alcohol, an aromatic hydrocarbon, a ketone or an ester or a mixture of any two or more thereof.
References Cited (Backward Citations)
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