Abstract The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu 3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.
A highly oxidation resistant compound having low resistivity at room temperature comprising a body of stoichiometric Cu 3 Ge containing about 1 to about 15 atomic % Ga and/or Au.
Claim 2
Dependent Claim
30 words
A highly oxidation resistant compound having low resistivity at room temperature comprising a body of stoichiometric Cu 3 Ge containing about 1 to about 15 atomic % Ga and/or Au.
Claim 3
Dependent Claim
22 words
The compound according to claim 1 wherein the stoichiometric Cu 3 Ce body contains 1 to 5 atomic % Ga and/or Au.
Claim 4
Dependent Claim
22 words
The compound according to claim 1 wherein the stoichiometric Cu 3 Ce body contains 1 to 3 atomic % Ga and/or Au.
Claim 5
Dependent Claim
17 words
The compound according to any one of claims 1-3 wherein the stoichiometric Cu Ge body contains Ga.
Claim 6
Dependent Claim
18 words
The compound according to any one of claims 1-3 wherein the stoichiometric Cu 3 Ge body contains Au.
Claim 7
Dependent Claim
24 words
The compound according to claim 1 wherein the resistivity of said compound at room temperature is from abut 2.6 to about 2.9 μΩ cm.