EP0335383A2
Expired / Lapsed
EP
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Semiconductor device having a metallization film layer
Assignee: Hitachi Ltd
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Filing: 1989-03-30
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Granted: —
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Expires: 2009-03-30
Abstract
Abstract A metallization film layer (4) disposed on a semiconductor chip (1) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities. The metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn. Cu alloy as the metallization film layer (4) improves corrosion resistance by adding a trace amount of a metal element less noble than Cu within such a range where electric conductivity is not much reduced to Cu without lowering high electric conductivity, high heat resistance and high electro-migration resistance of Cu.
Inventors
- 👤 Shiro Kobayashi
- 👤 Emiko Murofushi
- 👤 Masahiko Itoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 11:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W72/00; H10W72/50; H10W72/90; H10W70/00; H10W70/60; H10W72/071; H10W72/075; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/5449; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/931; H10W72/932; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
130 words
A semiconductor device having a semiconductor chip (1), a diffusion layer (2) formed on said semiconductor chip (1), an insulator film layer (3) formed on said semiconductor chip (1), a metallization film layer (4) formed on said semiconductor chip (1), an electrode portion (5) formed on said metallization film layer (4), a protection film layer (7) formed on said metallization film layer (4), a wire (6) connected to said electrode portion (5), a lead frame (8) connected to said wire (6), and a package (9) covering said semiconductor chip (1), said protection film layer (7) and said wire (6), characterized in that said metallization film layer (4) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities.
Claim 2
Dependent Claim
130 words
A semiconductor device having a semiconductor chip (1), a diffusion layer (2) formed on said semiconductor chip (1), an insulator film layer (3) formed on said semiconductor chip (1), a metallization film layer (4) formed on said semiconductor chip (1), an electrode portion (5) formed on said metallization film layer (4), a protection film layer (7) formed on said metallization film layer (4), a wire (6) connected to said electrode portion (5), a lead frame (8) connected to said wire (6), and a package (9) covering said semiconductor chip (1), said protection film layer (7) and said wire (6), characterized in that said metallization film layer (4) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities.
Claim 3
Dependent Claim
40 words
A semiconductor device according to claim 1, characterized in that said metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn.
Claim 4
Dependent Claim
84 words
A semiconductor device according to claim 2, characterized in that when said metal element less noble than Cu is made to exist, its content in a weight ratio is 0.01 to 0.5 % of Al, 0.01 to 0.3 % of Be, 0.01 to 0.3 % of Cr, 0.01 to 0.2 % of Fe, 0.01 to 0.3 % of Mg, 0.01 to 0.05 % of Ni, 0.01 to 0.2 % of Si, 0.01 to 0.5 % of Sn and 0.01 to 2 % of Zn.
Claim 5
Dependent Claim
62 words
A semiconductor device according to claim 3, characterized in that each of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn is selectively oxidized when added to Cu, and a protection oxide film (7) consisting principally of each of Al₂O₃, BeO, Cr₂O₃, Fe₂O₃ + Fe₃O₄, MgO, Ni₂O₃ + Ni₃O₄, SiO₂, Si₂O and ZnO is formed so as to improve corrosion resistance.
Claim 6
Dependent Claim
142 words
A semiconductor device having a Si semiconductor chip (1), a diffusion layer (2) formed on said Si semiconductor chip (1), an insulator film layer (3) formed on said Si semiconductor chip (1), a metallization film layer (4) formed on said Si semiconductor chip (1), an electrode portion (5) formed on said metallization film layer (4), a protection film layer (7) formed on said metallization film layer (4), an Au wire (6) connected to said electrode portion (5), a Cu lead frame (8) connected to said Au wire (6), and a resin or ceramic package (9) covering said Si semiconductor chip (1), said protection film layer (7) and said Au wire (6), characterized in that said metallization film layer (4) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities.
Claim 7
Dependent Claim
142 words
A semiconductor device having a Si semiconductor chip (1), a diffusion layer (2) formed on said Si semiconductor chip (1), an insulator film layer (3) formed on said Si semiconductor chip (1), a metallization film layer (4) formed on said Si semiconductor chip (1), an electrode portion (5) formed on said metallization film layer (4), a protection film layer (7) formed on said metallization film layer (4), an Au wire (6) connected to said electrode portion (5), a Cu lead frame (8) connected to said Au wire (6), and a resin or ceramic package (9) covering said Si semiconductor chip (1), said protection film layer (7) and said Au wire (6), characterized in that said metallization film layer (4) is made of Cu alloy which contains a metal element less noble than Cu and whose balance consists of Cu and unavoidable impurities.
Claim 8
Dependent Claim
40 words
A semiconductor device according to claim 5, characterized in that said metal element less noble than Cu is at least one kind of members selected from the group consisting of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn.
Claim 9
Dependent Claim
84 words
A semiconductor device according to claim 6, characterized in that when said metal element less noble than Cu is made to exist, its content in a weight ratio is 0.01 to 0.5 % of Al, 0.01 to 0.3 % of Be, 0.01 to 0.3 % of Cr, 0.01 to 0.2 % of Fe, 0.01 to 0.3 % of Mg, 0.01 to 0.5 % of Ni, 0.01 to 0.2 % of Si, 0.01 to 0.5 % of Sn and 0.01 to 2 % of Zn.
Claim 10
Dependent Claim
62 words
A semiconductor device according to claim 7, characterized in that each of Al, Be, Cr, Fe, Mg, Ni, Si, Sn and Zn is selectively oxidized when added to Cu, and a protection oxide film (7) consisting principally of each of Al₂O₃, BeO, Cr₂O₃, Fe₂O₃ + Fe₃O₄, MgO, Ni₂O₃ + Ni₃O₄, SiO₂, Si₂O and ZnO is formed so as to improve corrosion resistance.
References Cited (Backward Citations)
No citation records indexed.
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