US3243324A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating semiconductor devices by alloying a gold disk containing active impurities to a germanium pellet
Assignee: Hitachi Ltd
•
Filing: 1963-09-05
•
Granted: 1966-03-29
•
Expires: 1983-09-05
Abstract
No abstract record available.
Inventors
- 👤 Kodera Hiroshi
- 👤 Iida Shinya
- 👤 Sugita Yoshimitsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:01
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
64 words
A METHOD OF FABRICATING SEMICONDUCTOR DEVICES WHICH COMPRISES PLACING A GOLD DISK CONTAINING AN ACTIVE IMPURITY AND HAVING A RATIO OF EFFECTIVE DIAMETER TO THE THICKNESS WITHIN THE RANGE OF 2 TO 30 IN INTIMATE SURFACE CONTACT WITH A GERMANIUM PELLET, MAINTAINING THE SPECMEN SO ASSEMBLED AT A PREDETERMINED ALLOYING TEMPERATURE, AND THEN CAUSING REGROWTH TO TAKE PLACE TO FORM AN ALLOYED REGROWTH LAYER.
Claim 2
Independent Claim
64 words
A METHOD OF FABRICATING SEMICONDUCTOR DEVICES WHICH COMPRISES PLACING A GOLD DISK CONTAINING AN ACTIVE IMPURITY AND HAVING A RATIO OF EFFECTIVE DIAMETER TO THE THICKNESS WITHIN THE RANGE OF 2 TO 30 IN INTIMATE SURFACE CONTACT WITH A GERMANIUM PELLET, MAINTAINING THE SPECMEN SO ASSEMBLED AT A PREDETERMINED ALLOYING TEMPERATURE, AND THEN CAUSING REGROWTH TO TAKE PLACE TO FORM AN ALLOYED REGROWTH LAYER.
References Cited (Backward Citations)
US3001894A
Cited
US3050667A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-03-28 | 1969-09-27 | 1970-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-03-28 | 1973-09-27 | 1974-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-03-28 | 1977-09-27 | 1978-03-29 | $7700.00 | Window Closed / Lapsed |