US3050667A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing an electric semiconductor device of silicon
Assignee: Siemens Schuckertwerke AG
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Filing: 1960-12-28
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Granted: 1962-08-21
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Expires: 1980-12-28
Abstract
No abstract record available.
Inventors
- 👤 Emeis Reimer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:13
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C26/00; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/923; Y10S428/924; Y10S428/926; Y10T; Y10T428/00; Y10T428/12; Y10T428/12431; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12861; Y10T428/12889
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
65 words
AN ELECTRIC SEMICONDUCTOR DEVICE COMPRISING A SILICON PLATE HAVING AN ALLOY-BONDED SURFACE ELECTRODE OF GOLD, A CARRIER PLATE OF MOLYBDENUM ADJACENT TO THE ELECTRODE IN FACE-TO-FACE RELATION THERETO, A SILVER LAYER ON SAID MOLYBDENUM PLATE, AND A GOLD COATING BETWEEN THE SILVER LAYER AND THE GOLD ELECTRIDE OF THE SILICON PLATE, SAID GOLD COATING AND GOLD ELECTRODE BEING ALLOY-BONDED TO, AND MERGING WITH, EACH OTHER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-08-20 | 1966-02-19 | 1966-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-08-20 | 1970-02-19 | 1970-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-08-20 | 1974-02-19 | 1974-08-21 | $7700.00 | Window Closed / Lapsed |