EP0064662A2
Expired / Lapsed
EP
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Method of forming a silicon and copper doped aluminum metallization and a Schottky diode
Assignee: International Business Machines Corp
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Filing: 1982-04-27
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Granted: —
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Expires: 2002-04-27
Abstract
Abstract The method includes the steps of depositing the constituents of the metallization on a silicon body where the constituents are deposited in two or three layers consisting of different materials or material combinations but containing not more than two constituents and where the layer adjacent to the silicon body is not formed from aluminum as well as copper, and by sintering the whole unit to form the Schottky diode. Four embodiments of the method are described. The produced Schottky diodes are resistant to internal field emission characteristics created by co-incidental copper-aluminum precipitates and aluminum doped solid phase epitaxial grown silicon mounds.
Inventors
- 👤 Sang Uk Kim
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 09:40
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
Method of forming a silicon and copper doped aluminum metallization on a silicon body and a Schottky diode between said metallization and said body by depositing the constituents of the metallization on said silicon body, where the constituents are deposited in two or three layers consisting of different materials or material combinations but containing not more than two constituents and by sintering the whole unit, characterized in that the layer adjacent to the silicon body is not formed from aluminum as well as copper.
Claim 2
Dependent Claim
84 words
Method of forming a silicon and copper doped aluminum metallization on a silicon body and a Schottky diode between said metallization and said body by depositing the constituents of the metallization on said silicon body, where the constituents are deposited in two or three layers consisting of different materials or material combinations but containing not more than two constituents and by sintering the whole unit, characterized in that the layer adjacent to the silicon body is not formed from aluminum as well as copper.
Claim 3
Dependent Claim
25 words
Method according to claim 1, wherein a layer of copper doped silicon and a layer of aluminum on said copper doped silicon layer are deposited.
Claim 4
Dependent Claim
69 words
Method according to claim 2, wherein there is further included the step of heating the silicon body to a temperature of 200°C prior to the deposition of said copper doped silicon layer, and said layer of copper doped silicon is deposited to a thickness of 60 nm and contains 4 to 5% by weight of copper, and the layer of aluminum is deposited to a thickness of 940 nm.
Claim 5
Dependent Claim
39 words
Method according to claim 1, wherein a layer of silicon and a layer of copper doped aluminum on the surface of said deposited silicon layer are deposited, and the body is sintered at a temperature in excess of 400°C.
Claim 6
Dependent Claim
48 words
Method according to claim 4, wherein said silicon body is heated to 200°C prior to said deposition and said deposit of silicon is 20 nm thick and formed by evaporation and said copper doped aluminum layer on said silicon layer is 980 nm thick and contains 4% copper.
Claim 7
Dependent Claim
46 words
Method according to claim 1, wherein a layer of aluminum, a layer of silicon on said layer of aluminum, and on the layer of said silicon a layer of copper are deposited, and said body is sintered at a tempe- rature in excess of 400 C.
Claim 8
Dependent Claim
48 words
Method according to claim 6, wherein said silicon body is heated to a temperature of 200 0 C prior to the deposition of said aluminum layer, and wherein the thicknesses of said aluminum layer, said silicon and said copper layer are 960 nm, 20 nm and 30 nm.
Claim 9
Dependent Claim
36 words
Method according to claim 1, wherein a layer of aluminum doped silicon, a layer of copper on said silicon doped aluminum layer are deposited, and said body is sintered at a temperature in excess of 400°C.
Claim 10
Dependent Claim
25 words
Method according to any one of claims 1 to 8, wherein prior to said sintering the metal lines are defined photolithographically in said deposited layers.
References Cited (Backward Citations)
No citation records indexed.
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