EP0259616A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Silicon semiconductor device structure and process for forming same
Assignee: International Business Machines Corp
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Filing: 1987-08-06
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Granted: —
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Expires: 2007-08-06
Abstract
Abstract An intermediate manufacturing product adapted for fabrication into transistor or diode structures comprising a silicon monocrystalline substrate (8) provided with at least one surface which includes a masked electrical insulating silicon-containing compound layer (2) and an unmasked metal silicide layer (6) for contact purposes. A process for forming this product comprises the steps of masking portions of a silicon-containing compound layer (2) provided on at least one surface of the crystal; implanting metal ions into the interface (5) between the silicon-containing compound layer and the silicon substrate below the unmasked silicon-containing compound layer; heating the crystal to a temperature of between about 100 °C and 500 °C to form a metal silicide in regions where the metal ions were sputtered into the crystal; and anisotropically dry etching the unmasked silicon-containing compound layer above the metal silicide.
Inventors
- 👤 Gottlieb Stefan Oehrlein
- 👤 James Alden Van Vechten
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 18:24
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P30/208
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
173 words
A process for fabricating an electronic device structure from a silicon semiconductor crystal, said crystal provided with at least one electrical insulating silicon-containing compound surface, comprising: masking portions of an electrical insulating silicon-compound surface layer (2) of a silicon semiconductor crystal (8) (Fig. 1); subjecting said silicon-containing surface layer (2) to metal ion implantation, said metal selected from the group consisting of palladium, platinum, nickel, cobalt, ruthenium, rhodium and copper, whereby a layer of metal (6) is disposed below unmasked silicon-containing compound surfaces (3) at the interface (5) between said silicon-containing compound layer (2) and said silicon monocrystalline substrate (8) (Fig. 2); heating said metal containing silicon semiconductor crystal to a temperature in the range of between about 100 °C and 500 °C whereby said metal reacts with said silicon substrate to form a metal silicide layer at the interface of said silicon-containing compound layer and said silicon monocrystalline substrate; and anisotropically dry etching said surface (3) whereby said unmasked silicon-containing compound layer (2) disposed above said metal silicide layer (6) is removed.
Claim 2
Dependent Claim
173 words
A process for fabricating an electronic device structure from a silicon semiconductor crystal, said crystal provided with at least one electrical insulating silicon-containing compound surface, comprising: masking portions of an electrical insulating silicon-compound surface layer (2) of a silicon semiconductor crystal (8) (Fig. 1); subjecting said silicon-containing surface layer (2) to metal ion implantation, said metal selected from the group consisting of palladium, platinum, nickel, cobalt, ruthenium, rhodium and copper, whereby a layer of metal (6) is disposed below unmasked silicon-containing compound surfaces (3) at the interface (5) between said silicon-containing compound layer (2) and said silicon monocrystalline substrate (8) (Fig. 2); heating said metal containing silicon semiconductor crystal to a temperature in the range of between about 100 °C and 500 °C whereby said metal reacts with said silicon substrate to form a metal silicide layer at the interface of said silicon-containing compound layer and said silicon monocrystalline substrate; and anisotropically dry etching said surface (3) whereby said unmasked silicon-containing compound layer (2) disposed above said metal silicide layer (6) is removed.
Claim 3
Dependent Claim
16 words
The process in accordance with claim 1 wherein said electrical insulating silicon-containing compound is silicon dioxide.
Claim 4
Dependent Claim
18 words
The process in accordance with claims 1 or 2 wherein said electrical insulating silicon-containing compound includes silicon nitride.
Claim 5
Dependent Claim
27 words
The process in accordance with one of the preceding claims wherein said metal silicide layer (6) is formed below the entire unmasked insulating silicon-containing compound layer (2).
Claim 6
Dependent Claim
50 words
The process in accordance with one of the preceding claims wherein said ions implanted into said silicon semiconductor crystal (8) are ions of a metal selected from the group consisting of palladium, platinum, nickel, cobalt, ruthenium and rhodium and preferably selected from the group consisting of palladium, platinum and nickel.
Claim 7
Dependent Claim
43 words
The process in accordance with one of the preceding claims wherein said heating step occurs at a temperature in the range of between about 125 °C and 450 °C and most preferably in the range of between about 175 °C and 350 °C.
Claim 8
Dependent Claim
49 words
The process in accordance with one of the preceding claims wherein a silicon dioxide surface is subjected to palladium implantation and said heating step is carried out at a temperature in the range of between about 175 °C and 300 °C, preferably at a temperature of about 200 °C.
Claim 9
Dependent Claim
34 words
An intermediate manufacturing product structure comprising a silicon semiconductor crystal (8) provided with at least one surface which includes a masked electrical insulating silicon-containing compound layer (2) and an unmasked metal silicide layer (6).
Claim 10
Dependent Claim
34 words
An intermediate manufacturing product structure comprising a silicon semiconductor crystal (8) provided with at least one surface which includes a masked electrical insulating silicon-containing compound layer (2) and an unmasked metal silicide layer (6).
Claim 11
Dependent Claim
25 words
The structure in accordance with claim 8 wherein said surface is completely covered with said masked silicon-containing compound layer and said unmasked metal silicide layer.
Claim 12
Dependent Claim
28 words
The structure in accordance with claims 8 or 9 wherein said intermediate manufacturing product is adapted for fabrication into a field effect transistor or into a planar diode.
Claim 13
Dependent Claim
33 words
The structure in accordance with one of claims 8 to 10 wherein said metal of said metal silicide is selected from the group consisting of palladium, platinum, nickel, cobalt, ruthenium, rhodium and copper.
Claim 14
Dependent Claim
23 words
The structure in accordance with one of claims 8 to 11 wherein said electrical insulating silicon-containing compound is silicon dioxide or silicon nitride.
References Cited (Backward Citations)
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