US5213997A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming crystalline film employing localized heating of the substrate
Assignee: Canon Inc
•
Filing: 1990-03-30
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Granted: 1993-05-25
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Expires: 2010-03-30
Abstract
Abstract A method for forming a crystalline film comprises respectively introducing into a film forming space having a substrate arranged therein a gaseous starting material for formation of the crystalline film and a gaseous halogenic oxidizing agent capable of chemically reacting with the starting material to form the film, the substrate having a surface comprised of a non-single crystal material having a predetermined temperature distribution.
Inventors
- 👤 Shunichi Ishihara
- 👤 Jun-Ichi Hanna
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:56
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/22; C23C16/24; C23C16/46; C23C16/463; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B29/00; C30B29/02; C30B29/06
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
157 words
A method for forming a polycrystalline film comprising the steps of: (i) separately introducing into a film forming space having a substrate a gaseous starting material for formation of said polycrystalline film and a gaseous halogenic oxidizing agent capable of chemically reacting with said starting material to form said polycrystalline film; (ii) controlling temperatures of said substrate so as to vary the temperatures of said substrate and to impart a non-uniform temperature distribution in a range of from 50° C. to 70° C. on said substrate by setting temperatures at specified desired positions in said substrate in accordance with a predetermined temperature distribution pattern, thereby effecting selective deposition of said polycrystalline film in a region having a size of no greater than 1 mm in length at said desired specified positions in accordance with said predetermined temperature distribution pattern; and (iii) growing crystal grains on said substrate at said specified desired positions to form said polycrystalline film.
Claim 2
Independent Claim
157 words
A method for forming a polycrystalline film comprising the steps of: (i) separately introducing into a film forming space having a substrate a gaseous starting material for formation of said polycrystalline film and a gaseous halogenic oxidizing agent capable of chemically reacting with said starting material to form said polycrystalline film; (ii) controlling temperatures of said substrate so as to vary the temperatures of said substrate and to impart a non-uniform temperature distribution in a range of from 50° C. to 70° C. on said substrate by setting temperatures at specified desired positions in said substrate in accordance with a predetermined temperature distribution pattern, thereby effecting selective deposition of said polycrystalline film in a region having a size of no greater than 1 mm in length at said desired specified positions in accordance with said predetermined temperature distribution pattern; and (iii) growing crystal grains on said substrate at said specified desired positions to form said polycrystalline film.
Claim 3
Dependent Claim
31 words
The method according to claim 1, wherein the gaseous halogenic oxidizing agent is at least one selected from F 2 , Cl 2 , Br 2 , I 2 and ClF.
Claim 4
Dependent Claim
14 words
The method according to claim 1, wherein said polycrystalline film is a silicon film.
Claim 5
Dependent Claim
31 words
The method according to claim 1, wherein the temperature distribution of the substrate surface is formed by the irradiation of at least one selected from infrared light, laser and electron beam.
References Cited (Backward Citations)
JPS60219728A
Cited
US4683144A
Cited
JPS60219729A
Cited
US4806386A
Cited
US4759947A
Cited
US4657777A
Cited
US4728528A
Cited
US4784874A
Cited
US4818563A
Cited
US4801468A
Cited
US4803093A
Cited
US4849249A
Cited
US4812325A
Cited
US4818564A
Cited
JPS6296675A
Cited
US4751192A
Cited
US4885258A
Cited
US4824697A
Cited
US4800173A
Cited
EP0241204A2
Cited
JPS62241326A
Cited
EP0241316A2
Cited
JPS62240766A
Cited
JPS62240767A
Cited
US4918028A
Cited
JPS62243767A
Cited
US4942058A
Cited
US4843030A
Cited
JPH01172576A
Cited
WO1990001794A1
Cited
EP0394462A1
Cited
EP0368651A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |