US4806386A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming deposited film
Assignee: Canon Inc
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Filing: 1987-04-02
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Granted: 1989-02-21
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Expires: 2007-04-02
Abstract
Abstract An apparatus for forming a deposited film comprises a chamber, which can be brought into a reduced pressure, for forming a deposited film on a substrate by introducing a starting gas into said chamber and decomposing or polymerizing said gas, the apparatus is provided with both a means for decomposing or polymerizing said gas by discharging and a means for decomposing or polymerizing said gas by heat.
Inventors
- 👤 Shunichi Ishihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:42
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
101 words
A method for forming a multi-layer structure deposited film having a plurality of layers on a substrate, which comprises forming at least one layer (A) of said multi-layer structure deposited film including silicon and carbon atoms by decomposition or polymerization of a first starting gas by heat, said first starting gas containing (CH 3 ) 3 Si 2 H 3 , and forming a layer (B) of said multi-layer structure deposited film including silicon atoms by decomposition or polymerization of a second starting gas by discharge energy, said second starting gas being the same or different from said first starting gas.
Claim 2
Independent Claim
101 words
A method for forming a multi-layer structure deposited film having a plurality of layers on a substrate, which comprises forming at least one layer (A) of said multi-layer structure deposited film including silicon and carbon atoms by decomposition or polymerization of a first starting gas by heat, said first starting gas containing (CH 3 ) 3 Si 2 H 3 , and forming a layer (B) of said multi-layer structure deposited film including silicon atoms by decomposition or polymerization of a second starting gas by discharge energy, said second starting gas being the same or different from said first starting gas.
Claim 3
Dependent Claim
20 words
The method according to claim 1 wherein the first starting gas comprises SiH 4 and B 2 H 6 .
Claim 4
Dependent Claim
13 words
The method according to claim 1 wherein the first starting gas contains Ar.
Claim 5
Dependent Claim
19 words
The method according to claim 1 wherein the first starting gas is the same as the second starting gas.
Claim 6
Dependent Claim
17 words
The method according to claim 1 wherein a second layer formed by discharging is an a-SiC layer.
Claim 7
Dependent Claim
21 words
The method according to claim 1 wherein the second starting gas is (CH 3 ) 3 Si 2 H 3 .
Claim 8
Dependent Claim
18 words
The method according to claim 1 wherein the second starting gas comprises SiH 4 and CH 4 .
Claim 9
Dependent Claim
18 words
The method according to claim 1 wherein the second starting gas comprises SiH 4 and CH 4 .
Claim 10
Dependent Claim
13 words
The method according to claim 1 wherein the second starting gas contains Ar.
References Cited (Backward Citations)
US4401689A
Cited
US4532196A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-21 | 1992-08-22 | 1993-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-21 | 1996-08-22 | 1997-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-21 | 2000-08-22 | 2001-02-21 | $7700.00 | Window Closed / Lapsed |