US4683144A
Expired / Lapsed
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Method for forming a deposited film
Assignee: Canon Inc
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Filing: 1985-04-11
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Granted: 1987-07-28
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Expires: 2005-04-11
Abstract
Abstract A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: SinH2n+2 (n>/=1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate. A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: SinH2n+2 (n>/=1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.
Inventors
- 👤 Yukuo Nishimura
- 👤 Ken Eguchi
- 👤 Hiroshi Matsuda
- 👤 Masahiro Haruta
- 👤 Yutaka Hirai
- 👤 Takashi Nakagiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:40
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/44; C23C16/48; C23C16/482; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; B05D3/00; B05D3/06
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
113 words
A photolytic method for forming a deposited film, which comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si n H 2n+2 (n≧1) and a halogen compound selected from the group comprised of Cl 2 , Br 2 , I 2 and F 2 , in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate whereby the deposited film may be formed at substrate temperatures on the order of about 50° to 150° C., and without application of thermal energy to excite and decompose the compounds.
Claim 2
Dependent Claim
113 words
A photolytic method for forming a deposited film, which comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si n H 2n+2 (n≧1) and a halogen compound selected from the group comprised of Cl 2 , Br 2 , I 2 and F 2 , in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate whereby the deposited film may be formed at substrate temperatures on the order of about 50° to 150° C., and without application of thermal energy to excite and decompose the compounds.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein the silane compound is a straight chain silane compound represented by the general formula: Si n H 2n+2 (n≧1).
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the silane compound is a chain silane compound having side chain represented by the general formula: Si n H 2n+2 (n≧4).
Claim 5
Dependent Claim
146 words
A photolytic method for forming a deposited film, which comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si n H 2n+2 (n≧1), a halogen compound selected from the group comprised of Cl 2 , Br 2 , I 2 and F 2 , and a compound containing atoms belonging to the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate, whereby the deposited film may be formed at substrate temperatures on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds.
Claim 6
Dependent Claim
146 words
A photolytic method for forming a deposited film, which comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si n H 2n+2 (n≧1), a halogen compound selected from the group comprised of Cl 2 , Br 2 , I 2 and F 2 , and a compound containing atoms belonging to the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate, whereby the deposited film may be formed at substrate temperatures on the order of about 50° to 150° C. and without application of thermal energy to excite and decompose the compounds.
Claim 7
Dependent Claim
26 words
A method according to claim 4, wherein the atoms of the group III of the periodic table are selected from B, Al, Ga, In and Tl.
Claim 8
Dependent Claim
26 words
A method according to claim 4, wherein the atoms of the group V of the periodic table are selected from N, P, As, Sb and Bi.
Claim 9
Dependent Claim
20 words
A method according to claim 1, wherein the photoenergy utilized is selected from UV-ray, IR-ray, visible light, X-ray and γ-ray.
Claim 10
Dependent Claim
25 words
A method according to claim 3, wherein the chain silane compound having side chain is selected from the compounds No. 1-No. 3 shown below: ##STR2##
Claim 11
Dependent Claim
20 words
A method according to claim 1 including maintaining the substrate temperature from about 50° to 150° C. during film formation.
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