US4918028A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
Assignee: Canon Inc
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Filing: 1988-10-21
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Granted: 1990-04-17
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Expires: 2008-10-21
Abstract
Abstract A process for forming deposited film, which comprises: (a) the step of preparing a substrate having crystal nuclei or regions where crystal nuclei are selectively formed scatteringly on the surface for forming deposited film in a film forming space for formation of deposited film; (b) the step of forming deposited film on the above substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive on said activated species (A) separately from each other into said film-forming space to effect chemical reaction therebetween; (c) the step of introducing a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E2) forming said gaseous substance (E) into said film-forming space during said film-forming step (b) and exposing the deposited film growth surface to said gaseous substance (E) to apply etching action thereon, thereby effecting preferentially crystal growth in a specific face direction; (d) irradiating said gaseous substance (E) with light energy during said step (c), and (e) the step of increasing etching activity of said gaseous substance (E) by irradiation of light energy.
Inventors
- 👤 Shigeru Shirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:21
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; G; G02; G02F; G02F1/00; G02F1/01; G02F1/15; G02F1/1514; G02F1/1523; G02F1/1524; G02F1/15245; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/029; Y10S148/048
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
181 words
A process for forming a crystalline deposited film on a substrate in a film forming space, said substrate having a surface, which comprises: (a) preparing the surface on which spaced crystal nuclei are present for forming said crystalline deposited film; (b) forming said crystalline deposited film on said surface of said substrate by separately introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive with said activated species (A) to form a mixture and effect chemical reaction therebetween to thereby effect the formation of the crystalline deposited film, said crystalline deposited film having a surface; (c) producing an etching action on the crystalline deposited film by exposing the crystalline deposited film surface to a gaseous substance (E) capable of effecting an etching action thereon, and thereby effecting crystal growth in a specific face direction; (d) irradiating said gaseous substance (E) with light energy to thereby increase the etching activity thereof.
Claim 2
Dependent Claim
181 words
A process for forming a crystalline deposited film on a substrate in a film forming space, said substrate having a surface, which comprises: (a) preparing the surface on which spaced crystal nuclei are present for forming said crystalline deposited film; (b) forming said crystalline deposited film on said surface of said substrate by separately introducing into said film forming space an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation (B) which is chemically mutually reactive with said activated species (A) to form a mixture and effect chemical reaction therebetween to thereby effect the formation of the crystalline deposited film, said crystalline deposited film having a surface; (c) producing an etching action on the crystalline deposited film by exposing the crystalline deposited film surface to a gaseous substance (E) capable of effecting an etching action thereon, and thereby effecting crystal growth in a specific face direction; (d) irradiating said gaseous substance (E) with light energy to thereby increase the etching activity thereof.
Claim 3
Dependent Claim
50 words
A process for forming a deposited film according to claim 1, wherein said compound (SX) is a chain halogenated silicon represented by the formula Si u Y 2u+2 (wherein u is an integer of 1 or more, Y is at least one element selected from F, Cl, Br and I).
Claim 4
Dependent Claim
59 words
A process for forming a deposited film according to claim 1, wherein said compound (SX) is a chain or cyclic halogenated silicon represented by the formula Si u H x Y y (wherein u, x, y are integers of 1 or more, x+y=2u or x+y=2u+2, and y is at least one element selected from F, Cl, Br and I).
Claim 5
Dependent Claim
32 words
A process for forming a deposited film according to claim 1, wherein either one of hydrogen and halogen is used in addition to said compound (SX) during decomposition of said compound (SX).
Claim 6
Dependent Claim
28 words
A process for forming a deposited film according to claim 1, wherein said chemical substance (B) for film formation is either one of hydrogen gas and halogen gas.
Claim 7
Dependent Claim
36 words
A process for forming a deposited film according to claim 1, wherein the flow rate ratio of said active species (A) and said active species (B) when introduced into the film-forming space is 10:1 to 1:10.
Claim 8
Dependent Claim
36 words
A process for forming a deposited film according to claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said compound (SX) during formation of said activated species (A).
Claim 9
Dependent Claim
40 words
A process for forming a deposited film according to claim 1, wherein a compound containing an impurity element as the component is permitted to coexist with said chemical substance (B) for film formation during formation of said activated species (B).
Claim 10
Dependent Claim
33 words
A process for forming a deposited film according to claim 1, wherein an activated species (D) formed from a compound containing an impurity element as the component is introduced into said film-forming space.
Claim 11
Dependent Claim
39 words
A process of forming a deposited film according to claim 1, wherein said gaseous substance (E) is formed from a gaseous substance (E 2 ), said gaseous substance (E 2 ) having been introduced in said film forming space.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-16 | 1993-10-16 | 1994-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-16 | 1997-10-16 | 1998-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-16 | 2001-10-16 | 2002-04-17 | $7700.00 | Window Closed / Lapsed |