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US4581249A Expired / Lapsed US ⏱️ 0.0 years remaining

Photochemical vapor deposition method

Assignee: Canon Inc
•
Filing: 1985-03-21
•
Granted: 1986-04-08
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Expires: 2005-03-21
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Abstract

Abstract A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the plural starting gases are introduced into the reaction chamber and the film is formed on said substrate by causing chemical reactions by irradiating molecules of these starting gases with individual light energy having a wavelength region corresponding to an absorption spectrum of each of said starting gas. A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the starting gas is introduced into the reaction chamber and the deposition film is formed on the substrate by causing a chemical reaction by irradiating with light energy having a wavelength region corresponding to an absorption spectrum of said starting gas and irradiating with light energy having gas and irradiating with light energy having a wavelength region corresponding to an absorption spectrum of chemical substance produced from said starting gas.

Inventors

  • 👤 Osamu Kamiya

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 16:48
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; B05D3/00; B05D3/06

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 87 words
A photochemical vapor deposition method which comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the plural starting gases are introduced into the reaction chamber and the film is formed on said substrate by causing chemical reactions by irradiating molecules of these starting gases with individual light energy having a wavelength region corresponding to an absorption spectrum of each of said starting gases.
Claim 2
Dependent Claim 87 words
A photochemical vapor deposition method which comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the plural starting gases are introduced into the reaction chamber and the film is formed on said substrate by causing chemical reactions by irradiating molecules of these starting gases with individual light energy having a wavelength region corresponding to an absorption spectrum of each of said starting gases.
Claim 3
Dependent Claim 25 words
A photochemical vapor deposition method according to claim 1 wherein one of starting gases is SiH 4 gas and another gas is CH 4 .
Claim 4
Dependent Claim 102 words
A photochemical vapor deposition method which comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the starting gas is introduced into the reaction chamber and the deposition film is formed on the substrate by causing a chemical reaction by irradiating with light energy having a wavelength region corresponding to an absorption spectrum of said starting gas and irradiating with light energy having a wavelength region corresponding to an absorption spectram of chemical substance produced from said starting gas.
Claim 5
Dependent Claim 102 words
A photochemical vapor deposition method which comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the starting gas is introduced into the reaction chamber and the deposition film is formed on the substrate by causing a chemical reaction by irradiating with light energy having a wavelength region corresponding to an absorption spectrum of said starting gas and irradiating with light energy having a wavelength region corresponding to an absorption spectram of chemical substance produced from said starting gas.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-04-07 1989-10-07 1990-04-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-04-07 1993-10-07 1994-04-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-04-07 1997-10-07 1998-04-08 $7700.00 Window Closed / Lapsed

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