Patent US6369039B1 successfully refreshed from Google Patents.
US4490211A
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US
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Laser induced chemical etching of metals with excimer lasers
Assignee: International Business Machines Corp
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Filing: 1984-01-24
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Granted: 1984-12-25
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Expires: 2004-01-24
Abstract
Abstract Disclosed is a method of etching a metallized substrate by excimer laser radiation. The substrate is exposed to a selected gas, e.g., a halogen gas, which spontaneously reacts with the metal forming a solid reaction product layer on the metal by a partial consumption of the metal. A beam of radiation from an excimer laser, e.g. XeF laser operating at a wavelength of 351 nm or XeCl laser at 308 nm or KrF laser at 248 nm or KrCl laser at 222 nm or ArF laser at 193 nm or F 2 laser at 157 nm, is applied to the reaction product in a desired pattern to vaporize the reaction product and thereby selectively etch the metal with a high resolution.
Inventors
- 👤 Lee Chen
- 👤 John R. Lankard
- 👤 Gangadhara S. Mathad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:40
CPC Classifications
C; C23; C23F; C23F4/00; C23F4/02; H; H05; H05K; H05K3/00; H05K3/02; H05K3/027
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
81 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of: (a) mounting the substrate in a reaction chamber; (b) establishing a predetermined low pressure in the chamber; (c) controllably introducing a selected gas into the chamber to form a solid reaction product with the metal by a partial consumption of the surface of said metal; and (d) selectively removing the reaction product by applying a beam of excimer laser radiation and thereby selectively etching the metal.
Claim 2
Independent Claim
81 words
A method of radiation induced dry etching of a metallized substrate comprising the steps of: (a) mounting the substrate in a reaction chamber; (b) establishing a predetermined low pressure in the chamber; (c) controllably introducing a selected gas into the chamber to form a solid reaction product with the metal by a partial consumption of the surface of said metal; and (d) selectively removing the reaction product by applying a beam of excimer laser radiation and thereby selectively etching the metal.
Claim 3
Dependent Claim
20 words
The method as in claim 1 wherein said radiation is of a wavelength suitable for absorption by said reaction product.
Claim 4
Dependent Claim
21 words
The method as in claim 2 wherein said reaction product is removed by said radiation by thermal excitation and eventual vaporization.
Claim 5
Dependent Claim
12 words
The method as in claim 3 wherein said gas is halogen gas.
Claim 6
Dependent Claim
11 words
The method as in claim 4 wherein said gas is chlorine.
Claim 7
Dependent Claim
18 words
The method as in claim 5 wherein said metal is copper and said reaction product is copper chloride.
Claim 8
Dependent Claim
23 words
The method as in claim 5 wherein said metal is selected from a group consisting of chromium, titanium, aluminum, molybdenum, and stainless steel.
Claim 9
Dependent Claim
55 words
The method as in claim 6 or 7 wherein said excimer laser is selected from a group consisting of XeF laser operating at a wavelength of 351 nm, XeCl laser at 308 nm, KrF laser at 248 nm, KrCl laser at 222 nm, ArF laser at 193 nm and F 2 laser at 157 nm.
Claim 10
Independent Claim
71 words
A method of radiation induced dry etching of a copper layer formed on a substrate comprising: (a) reacting said copper layer with a halogen gas forming a solid copper halide reaction product layer thereon by at least a partial consumption of said copper layer; and (b) selectively removing the copper halide, by vaporization, by applying, in a predetermined pattern, radiation from an excimer laser and thereby selectively etching the copper layer.
Claim 11
Independent Claim
71 words
A method of radiation induced dry etching of a copper layer formed on a substrate comprising: (a) reacting said copper layer with a halogen gas forming a solid copper halide reaction product layer thereon by at least a partial consumption of said copper layer; and (b) selectively removing the copper halide, by vaporization, by applying, in a predetermined pattern, radiation from an excimer laser and thereby selectively etching the copper layer.
Claim 12
Dependent Claim
53 words
The method as in claim 9 wherein said excimer laser is selected from a group consisting of XeF laser operating at a wavelength of 351 nm, XeCl laser at 308 nm, KrF laser at 248 nm, KrCl laser at 222 nm, ArF laser at 193 nm and F 2 laser at 157 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |