EP0241204A2 — Method for forming crystalline deposited film

Claim 1

Independent Claim 166 words

A method for forming a crystalline deposited film, which comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density ( NDL ) than the nucleation density (ND ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 2

Independent Claim 166 words

A method for forming a crystalline deposited film, which comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density ( NDL ) than the nucleation density (ND ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 3

Independent Claim 215 words

A method for forming a crystalline deposited film comprising the steps of: preparing a substrate- for formation of crystalline deposited film by providing a support having a non-nucleation surface (S NDS ) with smaller nucleation density and imparting to the sufficiently small area for crystal growth only from a single nucleus at a desired position on said non-nucleation surface (S NDS ) a material (M L ) for formation of nucleation surface (S NDL ) having greater nucleation density (ND S ) of said non-nucleation surface (S NDS ) which is different from the material (M S ) forming said non-nucleation surface (S NDS ) to thereby form said nucleation surface ( S NDL ) ; arranging said substrate in a film forming space; introducing a gaseous starting material and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which said substrate is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 4

Independent Claim 215 words

A method for forming a crystalline deposited film comprising the steps of: preparing a substrate- for formation of crystalline deposited film by providing a support having a non-nucleation surface (S NDS ) with smaller nucleation density and imparting to the sufficiently small area for crystal growth only from a single nucleus at a desired position on said non-nucleation surface (S NDS ) a material (M L ) for formation of nucleation surface (S NDL ) having greater nucleation density (ND S ) of said non-nucleation surface (S NDS ) which is different from the material (M S ) forming said non-nucleation surface (S NDS ) to thereby form said nucleation surface ( S NDL ) ; arranging said substrate in a film forming space; introducing a gaseous starting material and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which said substrate is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 5

Independent Claim 169 words

A method for forming a crystalline deposited film, which comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a convex surface constructed by a non-nucleation surface (S NDS ) with smaller nucleation density and a concave surface constructed by a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 6

Independent Claim 169 words

A method for forming a crystalline deposited film, which comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a convex surface constructed by a non-nucleation surface (S NDS ) with smaller nucleation density and a concave surface constructed by a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film, and permitting a single crystal to grow from said nucleus.

Claim 7

Dependent Claim 24 words

A method according to claim 1, 2, or 3, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized.

Claim 8

Dependent Claim 28 words

A method according to claim 4, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized within said non-nucleation surface (S NDS ).

Claim 9

Dependent Claim 21 words

A method according to claim 1, 2, or 3, wherein said nucleation surfaces (S NDL ) are arranged as regularly sectionalized.

Claim 10

Dependent Claim 25 words

A method according to claim 6, wherein said nucleation surfaces (S NDL ) are arranged as regularly sectionalized within said non-nucleation surface (S NDS ).

Claim 11

Dependent Claim 21 words

A method according to claim 1, 2, or 3, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly.

Claim 12

Dependent Claim 26 words

A method according to claim 8, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly within said non-nucleation surface (S NDS ) .

Claim 13

Dependent Claim 31 words

A method according to claim 1, 2, or 3, wherein a plural number of said nucleation surface (S NDL ) are arranged as sectionalized on said non-nucleation surface (S NDS ).

Claim 14

Dependent Claim 28 words

A method according to claim 1, 2, or 3, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized regularly on said non-nucleation surface (S NDS ).

Claim 15

Dependent Claim 28 words

A method according to claim 1, 2, or 3; wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly on said non-nucleation surface (S NDS ).

Claim 16

Independent Claim 20 words

A method according to any preceding claim, wherein said nucleation surface (S NDL ) is formed of a modified material.

Claim 17

Dependent Claim 30 words

A method according to claim 13, wherein said nucleation surface (S NDL ) is formed of a modified material obtained by modification of the material forming said non-nucleation surface (SNDS).

Claim 18

Independent Claim 29 words

A method according to any of claims 1 to 12, wherein said nucleation surface (SNDL) is formed of a material different from the material forming said non-nucleation surface (SNDS).

Claim 19

Independent Claim 18 words

A method according to any preceding claim wherein said non-nucleation surface (SNDS) is formed of an amorphous material.

Claim 20

Dependent Claim 35 words

A method according to claim 1,2, or-3, wherein a plural number of said nucleation surfaces (S NDL ) are provided as sectionalized, and single crystals are grown from said respective nucleation surfaces (S NDL ).

Claim 21

Dependent Claim 34 words

A method according to claim 17, wherein the single crystals grown from said respective nucleation surfaces (S NDL ) are subjected to overgrowth in the direction of said respective nucleation surfaces (S NDL ).

Claim 22

Dependent Claim 38 words

A method according to claim 17, wherein the single crystals grown from the respective nucleation surfaces (S NDL ) are permitted to grow to the sizes until they are contacted between the adjacent nucleation surfaces (S NDL ).

Claim 23

Dependent Claim 23 words

A method according to claim 13 or 14, wherein said nucleation surface (S NDL ) is formed according to the ion implantion method.

Claim 24

Dependent Claim 30 words

A method according to claim 15., wherein said non-nucleation surface (S NDS ) is formed of silicon oxide and said nucleation surface (S NDL ) is formed of silicon nitride.

Claim 25

Independent Claim 23 words

A method for forming a crystalline deposited film according to any preceding claim, wherein said gaseous starting material is a chain silane compound.

Claim 26

Dependent Claim 23 words

A method for forming a crystalline deposited film according to claim 22, wherein said chain silane compound is a straight chain silane compound.

Claim 27

Dependent Claim 33 words

A method for forming a crystalline deposited film according to claim 23,wherein said straight chain silane compound is represented by the formula S i nH2n+2 (n is an integer of 1 to 8).

Claim 28

Dependent Claim 23 words

A method for forming a crystalline deposited film according to claim 22, wherein said chain silane compound is a branched chain silane compound.

Claim 29

Independent Claim 31 words

A method for forming a crystalline deposited film according to any of claims 1 to 21, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.

Claim 30

Independent Claim 23 words

A method for forming a crystalline deposited film according to any preceding claim, wherein said gaseous halogenic oxidizing agent contains a halogen gas.

Claim 31

Dependent Claim 21 words

A method for forming a crystalline deposited film according to claim 27, wherein said gaseous halogenic oxidizing agent contains fluorine gas.

Claim 32

Dependent Claim 21 words

A method for forming a crystalline deposited film according to claim 27, wherein said gaseous halogenic oxidizing agent contains chlorine gas.

Claim 33

Independent Claim 31 words

A method for forming a crystalline deposited film according to any of claims 1 to 26, wherein said gaseous halogenic oxidizing agent is a gas containing fluorine atoms as a constituent.

Method for forming crystalline deposited film

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