Patent US5154514A successfully refreshed from Google Patents.
US5154514A
Expired / Lapsed
US
⏱️ 0.0 years remaining
On-chip temperature sensor utilizing a Schottky barrier diode structure
Assignee: International Business Machines Corp
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Filing: 1991-08-29
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Granted: 1992-10-13
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Expires: 2011-08-29
Abstract
Abstract A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in the silicon substrate, c) a second region of a metal-oxide semiconductor material on the first region, d) a third region of a metal over the second region; and, means for using the diode structure as a temperature sensitive device to measure an ambient temperature. The metal-oxide semiconductor material is preferably selected to have a bandgap of not less than about 3.0 eV.
Inventors
- 👤 Jeffrey P. Gambino
- 👤 Louis L. Hsu
- 👤 Michael A. Lee
- 👤 Krishna Seshan
- 👤 Alvin Sugerman
- 👤 Francis E. Turene
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:40
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/01
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
64 words
A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in said silicon substrate, c) a second region of a metal-oxide semiconductor material on said first region, d) a third region of a metal over said second region; and means using said diode structure as a temperature sensitive device for measuring an ambient temperature.
Claim 2
Dependent Claim
64 words
A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in said silicon substrate, c) a second region of a metal-oxide semiconductor material on said first region, d) a third region of a metal over said second region; and means using said diode structure as a temperature sensitive device for measuring an ambient temperature.
Claim 3
Dependent Claim
21 words
The temperature sensor of claim 1 wherein said metal-oxide semiconductor material has a bandgap of not less than about 3.0 eV.
Claim 4
Dependent Claim
29 words
The temperature sensor of claim 1 wherein the metal in said metal silicide and said metal-oxide regions is selected from the group comprising titanium, nickel, cobalt, chromium, and tantalum.
Claim 5
Dependent Claim
22 words
The temperature sensor of claim 1 wherein said third region metal is selected from the group comprising aluminum, tungsten, gold, and silver.
Claim 6
Dependent Claim
16 words
The temperature sensor of claim 1 wherein said ambient temperature measuring means includes an electronic circuit.
Claim 7
Dependent Claim
26 words
The temperature sensor of claim 5 wherein said electronic circuit includes means connected to said diode structure for generating a signal indicative of said ambient temperature.
Claim 8
Dependent Claim
35 words
The temperature sensor of claim 5 wherein said electronic circuit includes: means for establishing a supply current to said diode structure; and means for sensing the turn-on voltage at the anode of said diode structure.
Claim 9
Dependent Claim
39 words
The temperature sensor of claim 1 wherein said diode structure and said ambient temperature measuring means are disposed on a single semiconductor chip, said ambient temperature comprising the temperature of the semiconductor chip in the region of said diode.
Claim 10
Dependent Claim
35 words
The temperature sensor of claim 1 wherein: said region of metal-oxide forms a Schottky contact to said region of metal silicide; and said region of metal forms a Schottky contact to said region of metal-oxide.
Claim 11
Independent Claim
69 words
A method of sensing a temperature comprising the steps of: providing a diode structure including, a) a silicon substrate, b) a first region cf a metal silicide in said silicon substrate, c) a second region of a metal-oxide semiconductor material on said first region, d) a third region of a metal over said second region; and measuring, using said diode structure as a temperature sensitive device, an ambient temperature.
Claim 12
Independent Claim
69 words
A method of sensing a temperature comprising the steps of: providing a diode structure including, a) a silicon substrate, b) a first region cf a metal silicide in said silicon substrate, c) a second region of a metal-oxide semiconductor material on said first region, d) a third region of a metal over said second region; and measuring, using said diode structure as a temperature sensitive device, an ambient temperature.
Claim 13
Dependent Claim
20 words
The method of claim 10 wherein said metal-oxide semiconductor material has a bandgap of not less than about 3.0 eV.
Claim 14
Dependent Claim
28 words
The method of claim 10 wherein the metal in said metal silicide and said metal-oxide regions is selected from the group comprising titanium, nickel, cobalt, chromium, and tantalum.
Claim 15
Dependent Claim
21 words
The method of claim 10 wherein said third region metal is selected from the group comprising aluminum, tungsten, gold, and silver.
Claim 16
Dependent Claim
35 words
The temperature sensor of claim 10 wherein: said region of metal-oxide forms a Schottky contact to said region of metal silicide; and said region of metal forms a Schottky contact to said region of metal-oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-13 | 1996-04-13 | 1996-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-13 | 2000-04-13 | 2000-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-13 | 2004-04-13 | 2004-10-13 | $7700.00 | Window Closed / Lapsed |