US4714951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal
Assignee: Etude et la Fabrication de Circuits Integres Speciaux
•
Filing: 1986-02-26
•
Granted: 1987-12-22
•
Expires: 2006-02-26
Abstract
Abstract The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi 2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta 2 O 5 , especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.
Inventors
- 👤 Annie Baudrant
- 👤 Michel Marty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:35
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D30/0223; H10D30/0227; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/02; Y10S148/117; Y10S148/147
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
102 words
An integrated circuit device including a semiconductive chip having a plurality of separate silicon surface regions to each of which a low resistance electrical connection is to be provided, an insulating oxide layer overlying portions of the chip between said separate surface regions, and a continuous layer overlying said chip consisting of conducting portions and insulating portions, the conducting portions being of a silicide of a given refractory metal and contiguous to the silicon surface regions for providing low resistance electrical connection thereto, and the insulating portions being of an oxide of the given metal and contiguous to the insulating oxide layer.
Claim 2
Dependent Claim
102 words
An integrated circuit device including a semiconductive chip having a plurality of separate silicon surface regions to each of which a low resistance electrical connection is to be provided, an insulating oxide layer overlying portions of the chip between said separate surface regions, and a continuous layer overlying said chip consisting of conducting portions and insulating portions, the conducting portions being of a silicide of a given refractory metal and contiguous to the silicon surface regions for providing low resistance electrical connection thereto, and the insulating portions being of an oxide of the given metal and contiguous to the insulating oxide layer.
Claim 3
Dependent Claim
18 words
The integrated circuit device of claim 1 in which the insulating oxide layer is a silicon oxide layer.
Claim 4
Dependent Claim
45 words
The integrated circuit device of claim 2 in which the separate silicon surface regions include the monocrystalline source and drain regions of a transistor and the polycrystalline silicon gate region of the transistor and the silicon oxide layer covers the sidewalls of the gate region.
Claim 5
Dependent Claim
14 words
The integrated circuit device of claim 2 in which the given metal is tantalum.
Claim 6
Dependent Claim
34 words
The integrated circuit device of claim 2 in which the conducting portions of the continuous layer are coextensive with the silicon surface regions and the insulating portions are coexistent with the silicon oxide portions.
Claim 7
Dependent Claim
53 words
The integrated circuit device of claim 2 in which the conducting portions of the continuous layer are formed as reaction products of the refractory metal and the silicon surface regions underlying the conducting portions and the insulating portions are formed as the reaction products of the refractory metal and the underlying oxide layer.
Claim 8
Dependent Claim
21 words
The integrated circuit device of claim 6 in which the refractory metal is tantalum and the insulating oxide is silicon oxide.
References Cited (Backward Citations)
US3690945A
Cited
JPS5317393A
Cited
US4329706A
Cited
US4305200A
Cited
US4543592A
Cited
US4374700A
Cited
US4574467A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-21 | 1991-06-22 | 1991-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-21 | 1995-06-22 | 1995-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-21 | 1999-06-22 | 1999-12-22 | $7700.00 | Window Closed / Lapsed |