US3690945A
Expired / Lapsed
US
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Method of producing a transistor with an insulated control electrode
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1970-04-27
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Granted: 1972-09-12
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Expires: 1990-04-27
Abstract
Abstract A METHOD OF PRODUCING A TRANSISTOR WITH AN INSULATED CONTROL ELECTRODE COMPRISES APPLYING TO A SILICON SEMICONDUCTOR BODY AN OXYGEN PERMEABLE INSULATING LAYER WHICH DOES NOT CONSIST OF A SILICON OXIDE FOR THE CONTROL ELECTRODE, AND THEREAFTER TEMPERING THE SEMICONDUCTOR BODY IN AN ATMOSPHERE OF OXYGEN TO PRODUCE A SILICON DIOXIDE LAYER AT THE PHASE BORDER BETWEEN THE INSULATING LAYER AND THE SILICON BODY.
Inventors
- 👤 Max Kuisl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D99/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |