US4857973A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon waveguide with monolithically integrated Schottky barrier photodetector
Assignee: United States Department of the Air Force
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Filing: 1987-05-14
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Granted: 1989-08-15
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Expires: 2007-05-14
Abstract
Abstract The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.
Inventors
- 👤 Andrew C. Yang
- 👤 Joseph P. Lorenzo
- 👤 Richard A. Soref
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:51
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
83 words
A photodetector comprising: a crystalline substrate; a first Schottky barrier contact positioned upon said crystalline substrate; a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals; a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and an Ohmic contact electrically connected to said crystalline silicon layer.
Claim 2
Dependent Claim
83 words
A photodetector comprising: a crystalline substrate; a first Schottky barrier contact positioned upon said crystalline substrate; a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals; a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and an Ohmic contact electrically connected to said crystalline silicon layer.
Claim 3
Dependent Claim
29 words
The photodetector of claim 1 further comprising a dielectric layer interposed between said substrate and crystalline silicon layer in order to confine said waveguide and increase light transmission efficiency.
Claim 4
Dependent Claim
19 words
The photodetector of claim 1 wherein said photodetector is sensitive to light in the 1.1 to 1.6 micron wavelengths.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-14 | 1993-02-13 | 1993-08-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-14 | 1997-02-13 | 1997-08-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-14 | 2001-02-13 | 2001-08-15 | $7700.00 | Window Closed / Lapsed |