US4485389A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Amorphous semiconductors equivalent to crystalline semiconductors
Assignee: United Solar Systems Corp
•
Filing: 1982-09-29
•
Granted: 1984-11-27
•
Expires: 2002-09-29
Abstract
Abstract An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F71/134; H10P14/24; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 134
Claim 1
Independent Claim
118 words
An amorphous semiconductor body comprising a solid compensated amorphous semiconductor host matrix having at least one element and having electronic configurations which have an energy gap, said semiconductor body being formed by forming on a substrate an amorphous semiconductor host matrix body formed from the deposition of materials in substantially elemental form and introducing therein a plurality of different and complementary compensating materials comprising at least fluorine and excluding hydrogen, each of which reduces the density of certain localized defect states in the energy gap so that the combination of said different and compensating materials produces a greater reduction in the density of localized defect states in the energy gap than any one of the same could achieve.
Claim 2
Dependent Claim
118 words
An amorphous semiconductor body comprising a solid compensated amorphous semiconductor host matrix having at least one element and having electronic configurations which have an energy gap, said semiconductor body being formed by forming on a substrate an amorphous semiconductor host matrix body formed from the deposition of materials in substantially elemental form and introducing therein a plurality of different and complementary compensating materials comprising at least fluorine and excluding hydrogen, each of which reduces the density of certain localized defect states in the energy gap so that the combination of said different and compensating materials produces a greater reduction in the density of localized defect states in the energy gap than any one of the same could achieve.
Claim 3
Dependent Claim
57 words
The amorphous semiconductor body of claim 1 wherein said different and compensating materials introduced into said film are selected so that at least one reduces said localized states at or near the Fermi level and another reduces said localized states between these at or near said Fermi level and reduces either the conduction or valence bands thereof.
Claim 4
Dependent Claim
19 words
The amorphous semiconductor body of claim 1 wherein said at least one element of said host matrix is silicon.
Claim 5
Dependent Claim
32 words
The amorphous semiconductor body of claim 1, 2, or 3 wherein body is a vapor deposited thin film wherein said compensating materials were introduced into the film as the film was deposited.
Claim 6
Dependent Claim
105 words
An amorphous semiconductor body comprising an amorphous host matrix having at least one element including silicon and which has electronic configurations which have an energy gap with a density of localized defect states which adversely effect the obtainment of a given electrical characteristic unless compensated by a compensating material, said amorphous semiconductor host matrix formed from the deposition of materials in substantially elemental form and having introduced therein at least one compensating material including fluorine and excluding hydrogen which, as it is introduced into said host matrix material, is in activated form substantially to reduce the density of localized defect states in said energy gap.
Claim 7
Dependent Claim
105 words
An amorphous semiconductor body comprising an amorphous host matrix having at least one element including silicon and which has electronic configurations which have an energy gap with a density of localized defect states which adversely effect the obtainment of a given electrical characteristic unless compensated by a compensating material, said amorphous semiconductor host matrix formed from the deposition of materials in substantially elemental form and having introduced therein at least one compensating material including fluorine and excluding hydrogen which, as it is introduced into said host matrix material, is in activated form substantially to reduce the density of localized defect states in said energy gap.
Claim 8
Dependent Claim
37 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 wherein said body is a thin film, and at least a compensated portion of said film forms the charge carrier-supplying portion of a photovoltaic cell.
Claim 9
Dependent Claim
73 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 wherein said body is a thin film, and at least a compensated portion of said film forms the charge carrier-supplying portion of a photovoltaic cell, and there is further formed in a compensated portion of said film a heavily doped or modified ohmic contact interface-forming region between said charge carrier supplying portion of the cell and an electrode of the cell.
Claim 10
Dependent Claim
26 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 which is a thin film forming the semiconductor portion of a m-i-s photovoltaic cell.
Claim 11
Dependent Claim
60 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein spaced compensated portions of the film are doped to form p and n conductivity regions and a compensated portion of the film between said p and n conductivity region between said p and n conductivity regions, to form a p-i-n photovoltaic cell.
Claim 12
Dependent Claim
84 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein at least a compensated portion of said body forms the charge carrier-supplying portion of a photovoltaic cell, and said charge carrier-supplying portion of the cell include p and n conductivity regions having relatively small but sufficient amounts of a modifying material added thereto so that the Fermi level of said regions thereof are moved in opposite directions respectively at or near the valence and conduction bands.
Claim 13
Dependent Claim
43 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein there are adjacent compensated regions of said film having dopants of opposite conductivity type therein to form at least one p-n junction in the film.
Claim 14
Dependent Claim
36 words
The amorphous semiconductor body or claim 1, 2, 3, 4, or 6 which is a thin film wherein at least a compensated portion of said film forms the charge carrier-supplying portion of a Schottky barrier cell.
Claim 15
Dependent Claim
31 words
The amorphous semiconductor body of claims 1, 2, 3, 4 or 6 wherein said body includes a portion which is capable of holding a charge in an electrostatic image producing device.
Claim 16
Dependent Claim
58 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein at least a portion of said film forms the charge carrier-supplying portion of a photovoltaic cell which portion has a minimum density of localized defect states in the energy gap no greater than 10 16 per cubic centimeter per eV.
Claim 17
Dependent Claim
105 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein at least a portion of said film forms the charge carrier-supplying portion of a photovoltaic cell, which portion has a minimum density of localized defect states no greater than 10 16 per cubic centimeter per eV, and there is further formed in a compensated portion of said film a heavily doped ohmic contact interface region between said charge carrier-supplying portion of the cell and an electrode thereof, the conductivity of said ohmic contact interface region thereof is no less than about 10 -1 (ohm cm) -1 .
Claim 18
Dependent Claim
59 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 which is a thin film wherein at least a portion of said film forms the charge carrier-supplying a portion of a photovoltaic cell, and said charge carrier-supplying portion of the film has incorporated therein at least one modifying material which increases the carrier lifetime in the film.
Claim 19
Dependent Claim
24 words
The amorphous semiconductor body of claim 1, 2, 3 or 4 wherein said amorphous semiconductor host matrix is an alloy or composition including silicon.
Claim 20
Dependent Claim
54 words
The amorphous semiconductor body of claims 1, 2, 3, 4 or 6 wherein said amorphous semiconductor host matrix is an alloy or composition including silicon and germanium, said fluorine is incorporated into said germanium and silicon host matrix to decrease the density of localized defective states in the energy gap of said host matrix.
Claim 21
Dependent Claim
27 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 wherein said amorphous semiconductor host matrix is an alloy or composition including Group IV elements.
Claim 22
Dependent Claim
45 words
The amorphous semiconductor body of claim 1, 2, 3, 4, or 6 wherein at least a portion of said film is modified by adding a dopant material which shifts the Fermi level thereof to a point at or near the valence or conduction band thereof.
Claim 23
Dependent Claim
30 words
The amorphous semiconductor body of claim 6 which is a vapor deposited film and wherein said activated compensating material was introduced into the film as the film was being formed.
Claim 24
Dependent Claim
45 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 wherein at least one compensating material was introduced into said host matrix as it was activated by an electric field generated between two spaced electrodes to form a plasma of such compensating material.
Claim 25
Dependent Claim
54 words
The amorphous semiconductor body of claim 1 or 6 wherein said element or elements forming said semiconductor host matrix were deposited by vaporizing a solid form of the same in an evacuated space, and condensing the same on a substrate in said evacuated space while introducing into the depositing film at least said fluorine.
Claim 26
Dependent Claim
95 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 which is a thin film deposited by vaporizing a solid form of the same in an evacuated space, and condensing the same on a substrate in said evacuated space while introducing into the depositing film at least said fluorine, and wherein at least said fluorine was introduced into said host matrix while elevating the temperature thereof to a point near or approaching but below the crystallization temperature thereof, to reduce the porosity of the film and the localized states in the energy gap.
Claim 27
Dependent Claim
47 words
The amorphous semiconductor body of claim 1 or 6 is a vapor deposited thin film wherein at least the environment in which at least one of said compensating materials was introduced into said amorphous semiconductor host matrix film was different from that wherein said film was deposited.
Claim 28
Dependent Claim
35 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 is a thin film wherein said compensating materials which were introduced into the host matrix do not substantially increase the dark conductivity thereof.
Claim 29
Dependent Claim
84 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 wherein said body is a thin silicon-containing film, and at least a compensated portion of said film forms the charge carrier-supplying portion of a photovoltaic cell, and there is further formed in a compensated portion of said film a heavily doped or modified ohmic contact interface-forming region between said charge carrier-supplying portion of the cell and an electrode of the cell, and wherein said ohmic contact interface-forming region is compensated by fluorine.
Claim 30
Dependent Claim
36 words
The amorphous semiconductor film had of claims 1, 2, 3, 4, or 6 wherein there are adjacent compensated regions of said film having dopants of at least three alternating conductivity types to form a transistor-like device.
Claim 31
Dependent Claim
28 words
The amorphous semiconductor body of claim 1, 2, 3, 4 or 6 wherein oxygen was introduced into said host matrix as a compensating material in addition to fluorine.
Claim 32
Dependent Claim
81 words
The amorphous semiconductor body of claim 1 or 6 wherein said element or elements forming said semiconductor host matrix were deposited by vaporizing a solid form of the same in an evacuated space, and condensing the same on a substrate in said evacuated space while introducing into the depositing film at least said fluorine, and then in a separate environment introducing at least one compensating material into the host matrix while activating the same and elevating the temperature of the substrate.
Claim 33
Dependent Claim
32 words
An improved semiconductor amorphous alloy, said alloy including silicon and incorporating at least one density of states reducing element therein, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 34
Dependent Claim
32 words
An improved semiconductor amorphous alloy, said alloy including silicon and incorporating at least one density of states reducing element therein, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 35
Dependent Claim
18 words
The alloy as defined in claim 31 further including at least a second density of states reducing element.
Claim 36
Dependent Claim
56 words
The alloy as defined in claim 31 wherein said alloy is a multi-layer alloy of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 37
Dependent Claim
32 words
The alloy as defined in claim 33 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 38
Dependent Claim
31 words
The alloy as defined in claim 31 wherein said alloy includes at least an n or p conductivity region therein, said region respectively including an n or p dopant element therein.
Claim 39
Dependent Claim
17 words
The alloy as defined in claim 35 wherein said alloy forms part of a p-n junction device.
Claim 40
Dependent Claim
18 words
The alloy as defined in claim 35 wherein said alloy forms part of an electrostatic image producing device.
Claim 41
Dependent Claim
16 words
The alloy as defined in claim 35 wherein said alloy forms part of a photodetector device.
Claim 42
Dependent Claim
15 words
The alloy as defined in claim 35 wherein said alloy forms part of a transistor.
Claim 43
Dependent Claim
16 words
The alloy as defined in claim 35 wherein said alloy forms part of a solar cell.
Claim 44
Dependent Claim
89 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing element being fluorine, said host matrix excluding hydrogen.
Claim 45
Dependent Claim
89 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing element being fluorine, said host matrix excluding hydrogen.
Claim 46
Dependent Claim
18 words
The film as defined in claim 41 further including at least a second density of states reducing element.
Claim 47
Dependent Claim
56 words
The film as defined in claim 41 wherein said film is a multi-layer film of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 48
Dependent Claim
32 words
The film as defined in claim 43 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 49
Dependent Claim
32 words
The film as defined in claim 41 wherein said film includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 50
Dependent Claim
17 words
The film as defined in claim 45 wherein said film forms part of a p-n junction device.
Claim 51
Dependent Claim
18 words
The film as defined in claim 45 wherein said film forms part of an electrostatic image producing device.
Claim 52
Dependent Claim
16 words
The film as defined in claim 45 wherein said alloy forms part of a photodetector device.
Claim 53
Dependent Claim
15 words
The film as defined in claim 45 wherein said alloy forms part of a transistor.
Claim 54
Dependent Claim
16 words
The film as defined in claim 45 wherein said alloy forms part of a solar cell.
Claim 55
Dependent Claim
63 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and at least one density of states reducing element, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 56
Dependent Claim
63 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and at least one density of states reducing element, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 57
Dependent Claim
18 words
The device as defined in claim 51 further including at least a second density of states reducing element.
Claim 58
Dependent Claim
58 words
The device as defined in claim 51 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 59
Dependent Claim
32 words
The device as defined in claim 53 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 60
Dependent Claim
32 words
The device as defined in claim 51 wherein said body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 61
Dependent Claim
17 words
The device as defined in claim 55 wherein said body forms part of a p-n junction device.
Claim 62
Dependent Claim
18 words
The device as defined in claim 55 wherein said body forms part of an electrostatic image producing device.
Claim 63
Dependent Claim
16 words
The device as defined in claim 55 wherein said alloy forms part of a photodetector device.
Claim 64
Dependent Claim
15 words
The device as defined in claim 55 wherein said alloy forms part of a transistor.
Claim 65
Dependent Claim
16 words
The device as defined in claim 55 wherein said alloy forms part of a solar cell.
Claim 66
Dependent Claim
32 words
An improved semiconductor amorphous alloy, said alloy including germanium and incorporating at least one density of states reducing element therein, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 67
Dependent Claim
32 words
An improved semiconductor amorphous alloy, said alloy including germanium and incorporating at least one density of states reducing element therein, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 68
Dependent Claim
18 words
The alloy as defined in claim 61 further including at least a second density of states reducing element.
Claim 69
Dependent Claim
56 words
The alloy as defined in claim 61 wherein said alloy is a multi-layer alloy of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 70
Dependent Claim
32 words
The alloy as defined in claim 63 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 71
Dependent Claim
32 words
The alloy as defined in claim 61 wherein said alloy includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 72
Dependent Claim
17 words
The alloy as defined in claim 65 wherein said alloy forms part of a p-n junction device.
Claim 73
Dependent Claim
18 words
The alloy as defined in claim 65 wherein said alloy forms part of an electrostatic image producing device.
Claim 74
Dependent Claim
16 words
The alloy as defined in claim 65 wherein said alloy forms part of a photodetector device.
Claim 75
Dependent Claim
15 words
The alloy as defined in claim 65 wherein said alloy forms part of a transistor.
Claim 76
Dependent Claim
16 words
The alloy as defined in claim 65 wherein said alloy forms part of a solar cell.
Claim 77
Dependent Claim
89 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing element being fluorine, said host matrix excluding hydrogen.
Claim 78
Dependent Claim
89 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said density of states reducing element being fluorine, said host matrix excluding hydrogen.
Claim 79
Dependent Claim
18 words
The film as defined in claim 71 further including at least a second density of states reducing element.
Claim 80
Dependent Claim
56 words
The film as defined in claim 71 wherein said film is a multi-layer film of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 81
Dependent Claim
32 words
The film as defined in claim 73 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 82
Dependent Claim
32 words
The film as defined in claim 71 wherein said film includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 83
Dependent Claim
17 words
The film as defined in claim 75 wherein said film forms part of a p-n junction device.
Claim 84
Dependent Claim
18 words
The film as defined in claim 75 wherein said film forms part of an electrostatic image producing device.
Claim 85
Dependent Claim
16 words
The film as defined in claim 75 wherein said alloy forms part of a photodetector device.
Claim 86
Dependent Claim
15 words
The film as defined in claim 75 wherein said alloy forms part of a transistor.
Claim 87
Dependent Claim
16 words
The film as defined in claim 75 wherein said alloy forms part of a solar cell.
Claim 88
Dependent Claim
63 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including germanium and at least one density of states reducing element, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 89
Dependent Claim
63 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including germanium and at least one density of states reducing element, said density of states reducing element being fluorine, said alloy excluding hydrogen.
Claim 90
Dependent Claim
18 words
The device as defined in claim 81 further including at least a second density of states reducing element.
Claim 91
Dependent Claim
58 words
The device as defined in claim 81 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 92
Dependent Claim
32 words
The device as defined in claim 83 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 93
Dependent Claim
32 words
The device as defined in claim 81 wherein said body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 94
Dependent Claim
17 words
The device as defined in claim 85 wherein said body forms part of a p-n junction device.
Claim 95
Dependent Claim
18 words
The device as defined in claim 85 wherein said body forms part of an electrostatic image producing device.
Claim 96
Dependent Claim
16 words
The device as defined in claim 85 wherein said alloy forms part of a photodetector device.
Claim 97
Dependent Claim
15 words
The device as defined in claim 85 wherein said alloy forms part of a transistor.
Claim 98
Dependent Claim
16 words
The device as defined in claim 85 wherein said alloy forms part of a solar cell.
Claim 99
Dependent Claim
26 words
An improved semiconductor amorphous alloy, said alloy including silicon and germanium and incorporating at least one density of states reducing element therein, said alloy excluding fluorine.
Claim 100
Dependent Claim
26 words
An improved semiconductor amorphous alloy, said alloy including silicon and germanium and incorporating at least one density of states reducing element therein, said alloy excluding fluorine.
Claim 101
Dependent Claim
16 words
The alloy as defined in claim 91 wherein said density of states reducing element is hydrogen.
Claim 102
Dependent Claim
18 words
The alloy as defined in claim 92 further including at least a second density of states reducing element.
Claim 103
Dependent Claim
56 words
The alloy as defined in claim 91 wherein said alloy is a multi-layer alloy of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 104
Dependent Claim
32 words
The alloy as defined in claim 94 wherein there is deposited between said p and n doped layers as intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 105
Dependent Claim
32 words
The alloy as defined in claim 91 wherein said alloy includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 106
Dependent Claim
17 words
The alloy as defined in claim 96 wherein said alloy forms part of a p-n junction device.
Claim 107
Dependent Claim
18 words
The alloy as defined in claim 96 wherein said alloy forms part of an electrostatic image producing device.
Claim 108
Dependent Claim
16 words
The alloy as defined in claim 96 wherein said alloy forms part of a photodetector device.
Claim 109
Dependent Claim
15 words
The alloy as defined in claim 96 wherein said alloy forms part of a transistor.
Claim 110
Dependent Claim
16 words
The alloy as defined in claim 96 wherein said alloy forms part of a solar cell.
Claim 111
Dependent Claim
83 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said host matrix excluding fluorine.
Claim 112
Dependent Claim
83 words
A semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and germanium and having electronic configurations which have an energy gap and a density of localized defect states therein, said amorphous semiconductor host matrix including at least one compensating or alterant element, wherein said compensating or alterant element is incorporated in said amorphous semiconductor host matrix, yielding an amorphous semiconductor material having electronic configurations with a reduced density of localized defect states in the energy gap, said host matrix excluding fluorine.
Claim 113
Dependent Claim
16 words
The film as defined in claim 102 wherein said density of states reducing element is hydrogen.
Claim 114
Dependent Claim
18 words
The film as defined in claim 103 further including at least a second density of states reducing element.
Claim 115
Dependent Claim
56 words
The film as defined in claim 102 wherein said film is a multi-layer film of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element on the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 116
Dependent Claim
32 words
The film as defined in claim 105 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 117
Dependent Claim
32 words
The film as defined in claim 102 wherein said film includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 118
Dependent Claim
17 words
The film as defined in claim 107 wherein said film forms part of a p-n junction device.
Claim 119
Dependent Claim
18 words
The film as defined in claim 107 wherein said film forms part of an electrostatic image producing device.
Claim 120
Dependent Claim
16 words
The film as defined in claim 107 wherein said alloy forms part of a photodetector device.
Claim 121
Dependent Claim
15 words
The film as defined in claim 107 wherein said alloy forms part of a transistor.
Claim 122
Dependent Claim
16 words
The film as defined in claim 107 wherein said alloy forms part of a solar cell.
Claim 123
Dependent Claim
57 words
The improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and germanium and at least one density of states reducing element, said alloy excluding fluorine.
Claim 124
Dependent Claim
57 words
The improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including silicon and germanium and at least one density of states reducing element, said alloy excluding fluorine.
Claim 125
Dependent Claim
16 words
The device as defined in claim 113 wherein said density of states reducing element is hydrogen.
Claim 126
Dependent Claim
18 words
The device as defined in claim 114 further including at least a second density of states reducing element.
Claim 127
Dependent Claim
58 words
The device as defined in claim 113 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer including an n-dopant element in the layer to produce an n-type layer and the p-type layer including a p-dopant element in the layer to produce a p-type layer.
Claim 128
Dependent Claim
32 words
The device as defined in claim 116 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein.
Claim 129
Dependent Claim
32 words
The device as defined in claim 113 wherein said body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 130
Dependent Claim
17 words
The device as defined in claim 118 wherein said body forms part of a p-n junction device.
Claim 131
Dependent Claim
18 words
The device as defined in claim 118 wherein said body forms part of an electrostatic image producing device.
Claim 132
Dependent Claim
16 words
The device as defined in claim 118 wherein said alloy forms part of a photodetector device.
Claim 133
Dependent Claim
15 words
The device as defined in claim 118 wherein said alloy forms part of a transistor.
Claim 134
Dependent Claim
16 words
The device as defined in claim 118 wherein said alloy forms part of a solar cell.
References Cited (Backward Citations)
US3928866A
Cited
US4068020A
Cited
US4066527A
Cited
US4064521A
Cited
US4196438A
Cited
US4177473A
Cited
US4177474A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-27 | 1988-05-28 | 1988-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-27 | 1992-05-28 | 1992-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-27 | 1996-05-28 | 1996-11-27 | $7700.00 | Window Closed / Lapsed |