Schottky barrier type infrared ray sensor

Abstract

Abstract PURPOSE:To detect a weak infrared light by providing a metal electrode of a constituent of a metal/semiconductor Schottky contact structure having substantially uniform thickness and an uneven shape of a pitch and a height difference of ignorable degree with respect to an infrared light of using wavelength band. CONSTITUTION:In an r-type single crystal Si substrate 2 mirror-polished on both side surfaces, a reflection preventive film 10 is formed on the rear of an incident surface for an infrared light 11. An uneven shape is formed on a Schottky contact forming part and a PtSi 1 is formed in a thin film state on the substrate surface. In order to alleviate an electric field concentration around the PtSi 1, an N-type guard ring 3 is formed, and the PtSi 1 and a thermal oxide film 5 are covered with an insulating film 6 made of Si oxide, etc. In the PtSi 1, an optical signal charge generated by photoelectric conversion through metal wirings 7 of aluminum from an N-type high concentration impurity region 4 ohmically contacted with part of the PtSi through metal wirings 7 made of aluminum, etc., is removed out of a sensor.

Inventors

• 👤 Shigeru Toyama
• 👤 茂 遠山

Bibliographic Details