US5089746A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of ion beams by chemically enhanced sputtering of solids
Assignee: Varian Medical Systems Inc
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Filing: 1989-02-14
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Granted: 1992-02-18
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Expires: 2009-02-14
Abstract
Abstract A method for producing an ion beam for ion implantation by chemically enhanced bombardment of solids. The method is carried out in a reaction chamber having an anode and cathode and a cathode liner rich in a selected element, namely boron, arsenic, phosphorus or antimony. A non-poisonous feed gas is introduced into the reaction chamber and energy is supplied to the feed gas to generate a plasma in the reaction chamber. The constituents of the plasma react chemically with the selected element in the cathode liner and an electrical potential is established between the anode and the cathode so that ions in the plasma bombard the cathode liner. The chemical reaction and bombardment together generate an ion species in the plasma containing the selected element. A beam of ions containing the selected species is then extracted from the plasma.
Inventors
- 👤 Stephen S. Rosenblum
- 👤 Kenneth J. Doniger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:51
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/04; H01J37/08; H01J27/00; H01J27/02; H01J27/20
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
169 words
A method for producing an ion beam comprising a selected boron containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in boron atoms; introducing a feed gas into said reaction chamber, said feed gas containing a compound of fluorine, said feed gas being non-poisonous; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion rich in boron atoms, and establishing an electrical potential between first electrode and said second electrode so that ions in said plasma bombard said portion, said boron containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam comprising said boron containing species from said plasma; and separating said boron containing ion species from said first ion beam to produce said ion beam comprising a selected boron containing ion species for ion implantation.
Claim 2
Independent Claim
169 words
A method for producing an ion beam comprising a selected boron containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in boron atoms; introducing a feed gas into said reaction chamber, said feed gas containing a compound of fluorine, said feed gas being non-poisonous; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion rich in boron atoms, and establishing an electrical potential between first electrode and said second electrode so that ions in said plasma bombard said portion, said boron containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam comprising said boron containing species from said plasma; and separating said boron containing ion species from said first ion beam to produce said ion beam comprising a selected boron containing ion species for ion implantation.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said establishing an electrical potential is independent of said supplying energy to generate said plasma.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said portion rich in boron atoms has an electrical resistivity less than 100 ohm-cm.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said compound of fluorine does not contain chlorine.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein said non-poisonous feed gas has at most low toxicity.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein the atomic percentage of boron in said portion is greater than 75 percent.
Claim 8
Dependent Claim
37 words
The method of claim 1 wherein said feed gas comprises one or more of the following gases: Carbon Tetrafluoride (CF 4 ), Sulfur Hexafluoride (SF 6 ), difluoroethane, trifluoromethane, methyl fluoride, hexafluoroethane, perfluoropropane, perfluoropropene, octafluorocyclobutane, and perfluorobenzene.
Claim 9
Independent Claim
200 words
A method for producing an ion beam comprising a selected arsenic containing or phosphorus containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in arsenic or phosphorus; introducing a non-poisonous feed gas into said reaction chamber, said feed gas comprising a non-poisonous gas selected from the group consisting of a gas containing a compound of fluorine, hydrogen, and a gas containing a hydrogen compound; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion, and establishing an electrical potential between said first electrode and said second electrode so that ions in said plasma bombard said portion, said selected arsenic containing or phosphorus containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam containing said selected arsenic containing or phosphorus containing species from said plasma; and separating said selected arsenic containing or phosphorus containing species from said first ion beam to form said ion beam comprising a selected arsenic containing or phosphorus containing ion species for ion implantation.
Claim 10
Independent Claim
200 words
A method for producing an ion beam comprising a selected arsenic containing or phosphorus containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in arsenic or phosphorus; introducing a non-poisonous feed gas into said reaction chamber, said feed gas comprising a non-poisonous gas selected from the group consisting of a gas containing a compound of fluorine, hydrogen, and a gas containing a hydrogen compound; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion, and establishing an electrical potential between said first electrode and said second electrode so that ions in said plasma bombard said portion, said selected arsenic containing or phosphorus containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam containing said selected arsenic containing or phosphorus containing species from said plasma; and separating said selected arsenic containing or phosphorus containing species from said first ion beam to form said ion beam comprising a selected arsenic containing or phosphorus containing ion species for ion implantation.
Claim 11
Dependent Claim
21 words
The method of claim 8 wherein said establishing an electrical potential is independent of said supplying energy to generate said plasma.
Claim 12
Dependent Claim
16 words
The method of claim 8 wherein said portion has an electrical resistivity less than 100 ohm-cm.
Claim 13
Dependent Claim
13 words
The method of claim 8 wherein said compound of fluorine further includes chlorine.
Claim 14
Dependent Claim
15 words
The method of claim 8 wherein said non-poisonous feed gas has at most low toxicity.
Claim 15
Dependent Claim
18 words
The method of claim 8 wherein the atomic percentage of arsenic in said portion is greater than 75%.
Claim 16
Dependent Claim
18 words
The method of claim 8 wherein the atomic percentage of phosphorus in said portion is greater than 75%.
Claim 17
Dependent Claim
53 words
The method of claim 8 wherein said feed gas comprises one or more of the following gases: Carbon Tetrafluoride (CF 4 ), Sulfur Hexafluoride (SF 6 ), difluoroethane, trifluoromethane, methyl fluoride, hexafluoroethane, perfluoropropane, perfluoropropene, octafluorocyclobutane, perfluorobenzene, hydrogen, methane, ethane, ethylene, propane, propene, monochlorodifluoroethane, dichlorofluoromethane, trichlorofluoromethane, diclorodifluoromethane, trifluorochloromethane, difluoromonochloromethane, trifluorotrichloroethane, dichlorotetrafluoroethane, pentafluorochloroethane, and tetrafluoromonochloroethane.
Claim 18
Independent Claim
183 words
A method for producing an ion beam comprising a selected antimony containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in antimony atoms; introducing a feed gas into said chamber, said feed gas having at most low toxicity, said feed gas comprising one or more of the following gases: a gas containing a compound of fluorine, a gas containing hydrogen; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion, and establishing an electrical potential between said first electrode and said second electrode so that ions in said plasma bombard said portion, said selected antimony containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam containing said selected antimony containing species from said plasma; and separating said selected antimony containing species from said first ion beam to form said ion beam comprising said selected antimony containing species for ion implantation.
Claim 19
Independent Claim
183 words
A method for producing an ion beam comprising a selected antimony containing ion species for ion implantation, said method comprising: providing a reaction chamber having a first electrode and a second electrode, said first electrode having a portion rich in antimony atoms; introducing a feed gas into said chamber, said feed gas having at most low toxicity, said feed gas comprising one or more of the following gases: a gas containing a compound of fluorine, a gas containing hydrogen; supplying energy to said feed gas in said reaction chamber sufficient to generate a plasma, the constituents of said plasma reacting chemically with said portion, and establishing an electrical potential between said first electrode and said second electrode so that ions in said plasma bombard said portion, said selected antimony containing ion species being produced in said plasma by said supplying and said establishing; extracting a first ion beam containing said selected antimony containing species from said plasma; and separating said selected antimony containing species from said first ion beam to form said ion beam comprising said selected antimony containing species for ion implantation.
Claim 20
Dependent Claim
14 words
The method of claim 16 wherein said compound of fluorine does not contain chlorine.
Claim 21
Dependent Claim
20 words
The method of claim 16 wherein said establishing an electrical potential is independent of supplying energy to generate said plasma.
Claim 22
Dependent Claim
16 words
The method of claim 16 wherein said portion has an electrical resistivity less than 100 ohm-cm.
Claim 23
Dependent Claim
18 words
The method of claim 16 wherein the atomic percentage of antimony in said portion is greater than 75%.
Claim 24
Dependent Claim
46 words
The method of claim 16 wherein said feed gas of at most low toxicity comprises one or more of the following gases: Carbon Tetrafluoride (CF 4 ), Sulfur Hexafluoride (SF 6 ), difluoroethane, trifluoromethane, hexafluoroethane, perfluoropropane, perfluoropropene, octafluorocyclobutane, perfluorobenzene, hydrogen, methane, ethane, ethylene, propane, and propene.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-02-17 | 1995-08-19 | 1996-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-17 | 1999-08-19 | 2000-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-17 | 2003-08-19 | 2004-02-18 | $7700.00 | Window Closed / Lapsed |