US5079606A
Expired / Lapsed
US
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Thin-film memory element
Assignee: Casio Computer Co Ltd
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Filing: 1990-01-19
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Granted: 1992-01-07
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Expires: 2010-01-19
Abstract
Abstract A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is used as read electrode. Since the memory element has two electrodes, one for writing or erasing data, and the other for reading data, its threshold voltage remains unchanged. Hence, data can be read from the thin-film memory element for a virtually indefinitely long period of time.
Inventors
- 👤 Nobuyuki Yamamura
- 👤 Shinichi Shimomaki
- 👤 Hideaki Shimizu
- 👤 Hiroshi Matsumoto
- 👤 Naoki Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:11
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0466
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
134 words
A thin-film memory element into which data is electrically written and from which data is electrically read and erased, comprising: a semiconductor layer having first and second major surfaces; a source electrode and a drain electrode both electrically connected to said semiconductor layer; a silicon nitride film, formed on the first major surface of the semiconductor layer, being capable of accumulating an electrical charge, and having an Si/N ratio of 0.85 to 1:1; an insulating film, formed on the second major surface of the semiconductor layer, and having at least one of a composition ratio different from that of said silicon nitride film and a thickness different from that of said silicon nitride film; a first gate electrode formed on the silicon nitride film; and a second gate electrode formed on the insulating film.
Claim 2
Dependent Claim
134 words
A thin-film memory element into which data is electrically written and from which data is electrically read and erased, comprising: a semiconductor layer having first and second major surfaces; a source electrode and a drain electrode both electrically connected to said semiconductor layer; a silicon nitride film, formed on the first major surface of the semiconductor layer, being capable of accumulating an electrical charge, and having an Si/N ratio of 0.85 to 1:1; an insulating film, formed on the second major surface of the semiconductor layer, and having at least one of a composition ratio different from that of said silicon nitride film and a thickness different from that of said silicon nitride film; a first gate electrode formed on the silicon nitride film; and a second gate electrode formed on the insulating film.
Claim 3
Dependent Claim
38 words
The thin-film memory element according to claim 1, wherein said insulating film is made of silicon nitride, and a voltage which is applied to said second gate electrode enables substantially no electrical charge accumulation in said insulating film.
Claim 4
Dependent Claim
18 words
The thin-film memory element according to claim 2, wherein said insulating film comprises a two-layered silicon nitride film.
Claim 5
Dependent Claim
40 words
The thin-film memory element according to claim 1, wherein said first gate electrode is used to write data into and erase data from the memory element, and said second gate electrode is used to read data from the memory element.
Claim 6
Dependent Claim
17 words
The thin-film memory element according to claim 1, further comprising supporting means for supporting the memory element.
Claim 7
Dependent Claim
102 words
The thin-film memory element having electrically writing, erasing and reading-out functions, comprising: a semiconductor layer having first and second surfaces; a source electrode and a drain electrode both electrically connected to said semiconductor layer; a first insulating film means formed on said first surface of said semiconductor layer for trapping charges, and including a silicon nitride film having a composition ratio of Si/N of 0.85 to 1:1; a second insulating film formed on said second surface of said semiconductor layer; a first gate electrode formed on said first insulating film means; and a second gate electrode formed on said second insulating film.
Claim 8
Dependent Claim
102 words
The thin-film memory element having electrically writing, erasing and reading-out functions, comprising: a semiconductor layer having first and second surfaces; a source electrode and a drain electrode both electrically connected to said semiconductor layer; a first insulating film means formed on said first surface of said semiconductor layer for trapping charges, and including a silicon nitride film having a composition ratio of Si/N of 0.85 to 1:1; a second insulating film formed on said second surface of said semiconductor layer; a first gate electrode formed on said first insulating film means; and a second gate electrode formed on said second insulating film.
Claim 9
Dependent Claim
29 words
The thin film memory element according to claim 6, wherein said second insulating film is made of silicon nitride having a composition ratio of Si/N of less than 0.85.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-06 | 1995-07-08 | 1996-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-06 | 1999-07-08 | 2000-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-06 | 2003-07-08 | 2004-01-07 | $7700.00 | Window Closed / Lapsed |