US4358748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film circuit
Assignee: Robert Bosch GmbH
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Filing: 1980-02-01
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Granted: 1982-11-09
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Expires: 2000-02-01
Abstract
Abstract To improve the adhesion of a nickel layer to a valve metal layer in a thin film electronic circuit, a boundary layer is created between the valve metal and the nickel layer. The boundary layer is created by oxidizing the valve metal surface and applying the nickel layer by cathode sputtering with sufficiently high energy to cause nickel-ion migration into the valve metal oxide layer. The so-formed boundary layer improves the mechanical adhesion of the nickel layer to the valve metal layer and also prevents penetration of solder to the valve metal layer since the boundary layer acts as a diffusion barrier.
Inventors
- 👤 Heiko Gruner
- 👤 Georg Zimmermann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:48
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099; Y10T29/49101; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
186 words
In an electronic thin film circuit comprising a substrate (1) of insulating material, a valve metal layer (2) covering a part of said substrate and forming a first (M 1 ) and at least one further (M 2 , M 3 ) pattern, said first pattern constituting electrically conductive connecting means, said second pattern constituting an electronic circuit element, and a nickel layer (5) positioned over said valve metal layer in said first pattern, and a soft solder layer (6) covering at least a part of said nickel layer (5) the improvement comprising a boundary layer (4) comprising said valve metal, an oxide of said valve metal, nickel, nickel oxide and mixed phases thereof integral with and between said valve metal layer and said nickel layer, said boundary layer having been formed by forming an oxide layer having a thickness between 3 and 10 nm on said valve metal, applying said nickel layer and applying sufficient energy to form said boundary layer of valve metal, valve metal oxide, nickel oxide, nickel and mixed phases thereof by diffusion either during or subsequent to applying said nickel layer.
Claim 2
Dependent Claim
186 words
In an electronic thin film circuit comprising a substrate (1) of insulating material, a valve metal layer (2) covering a part of said substrate and forming a first (M 1 ) and at least one further (M 2 , M 3 ) pattern, said first pattern constituting electrically conductive connecting means, said second pattern constituting an electronic circuit element, and a nickel layer (5) positioned over said valve metal layer in said first pattern, and a soft solder layer (6) covering at least a part of said nickel layer (5) the improvement comprising a boundary layer (4) comprising said valve metal, an oxide of said valve metal, nickel, nickel oxide and mixed phases thereof integral with and between said valve metal layer and said nickel layer, said boundary layer having been formed by forming an oxide layer having a thickness between 3 and 10 nm on said valve metal, applying said nickel layer and applying sufficient energy to form said boundary layer of valve metal, valve metal oxide, nickel oxide, nickel and mixed phases thereof by diffusion either during or subsequent to applying said nickel layer.
Claim 3
Dependent Claim
27 words
An electronic thin film circuit as set forth in claim 1, wherein said oxide layer on said valve metal is formed having a thickness of 5 nm.
Claim 4
Dependent Claim
18 words
An electronic thin film circuit as set forth in claim 2, wherein said valve metal layer is tantalum.
Claim 5
Dependent Claim
26 words
An electronic thin film circuit as set forth in claim 1 or 2, wherein said metallic soft solder layer is deposited by immersion in lead-tin solder.
Claim 6
Dependent Claim
31 words
An electronic thin film circuit as set forth in claim 1, wherein said further pattern of said valve metal layer constitutes a resistor having a resistance substantially independent of temperature changes.
Claim 7
Dependent Claim
69 words
An electronic thin film circuit as set forth in claim 1, wherein said further pattern (M 3 ) defines at least one temperature dependent resistor; and wherein said boundary layer is arranged on said valve metal layer and said nickel layer is arranged on said boundary layer in the region of said further pattern, said nickel layer constituting said temperature dependent resistance in said region of said further pattern.
Claim 8
Dependent Claim
26 words
An electronic thin film circuit as set forth in claim 1, wherein the square resistance of said valve metal layer is between 20 and 200 ohms.
Claim 9
Dependent Claim
24 words
An electronic thin film circuit as set forth in claim 7, wherein said square resistance of said valve metal layer is approximately 50 ohms.
Claim 10
Dependent Claim
25 words
An electronic thin film circuit as set forth in claim 1, wherein the square resistance of said nickel layer is between 0.1 and 5 ohms.
Claim 11
Dependent Claim
22 words
An electronic thin film circuit as set forth in claim 9, wherein said square resistance of said nickel layer is 0.5 ohms.
Claim 12
Dependent Claim
62 words
An electronic thin film circuit as set forth in claim 1, wherein said boundary layer is created on said valve metal layer by oxidizing said valve metal layer, thereby forming a valve metal oxide layer; and depositing a nickel layer on said valve metal oxide layer with sufficient energy to cause intermetallic diffusion of nickel atoms into said valve metal oxide layer.
Claim 13
Independent Claim
136 words
A method for manufacturing an electronic thin film circuit on an insulating substrate (1), comprising the steps of depositing a valve metal layer (2) on said substrate by cathode sputtering; oxidizing said valve metal layer, thereby creating a valve metal oxide layer having a thickness between 3 and 10 nm on said valve metal; applying a nickel layer to said valve metal oxide layer by cathode sputtering, at a sputtering energy sufficiently high to cause an intermetallic diffusion of nickel atoms into said valve metal oxide layer to form a boundary layer (4) comprising said valve metal, an oxide of said valve metal, nickel, nickel oxide and mixed phases thereof, whereby a three-layer system is created on said substrate; and etching said three-layer system to create predetermined patterns constituting circuit elements of said thin film circuit.
Claim 14
Independent Claim
136 words
A method for manufacturing an electronic thin film circuit on an insulating substrate (1), comprising the steps of depositing a valve metal layer (2) on said substrate by cathode sputtering; oxidizing said valve metal layer, thereby creating a valve metal oxide layer having a thickness between 3 and 10 nm on said valve metal; applying a nickel layer to said valve metal oxide layer by cathode sputtering, at a sputtering energy sufficiently high to cause an intermetallic diffusion of nickel atoms into said valve metal oxide layer to form a boundary layer (4) comprising said valve metal, an oxide of said valve metal, nickel, nickel oxide and mixed phases thereof, whereby a three-layer system is created on said substrate; and etching said three-layer system to create predetermined patterns constituting circuit elements of said thin film circuit.
Claim 15
Dependent Claim
20 words
A method as set forth in claim 12 wherein said thickness of said valve metal oxide layer is 5 nm.
Claim 16
Dependent Claim
147 words
A method as set forth in claim 12, wherein said step of etching said three-layer system comprises applying a photoresist mask (90) to all parts of said nickel layer at which the surface of said substrate is not to be re-exposed, etching said nickel layer and most of said boundary layer in the region uncovered by said photoresist mask in a nickel etching substance comprising a mixture of 190 g/l (NH 4 ) 2 S 2 O 8 and 460 g/l H 2 SO 4 , and etching the remainder of said boundary layer still on said valve metal layer and said valve metal layer in a valve metal etching solution comprising a mixture of 190 g/l (NH 2 ) 2 S 2 O 8 and 125 g/l HF whereby a plurality of patterns forming the basic geometry of said electronic thin film circuit has been created.
Claim 17
Dependent Claim
76 words
A method as set forth in claim 14, wherein said plurality of patterns comprises a pattern constituting a temperature independent resistor; further comprising the step of selectively removing said nickel layer and said boundary layer except for a non-soluble portion (30) from said valve metal layer in the region of said pattern by etching with a mixture of 190 g/l (NH 4 ) 2 S 2 O 8 and 460 g/l H 2 SO 4 .
Claim 18
Dependent Claim
60 words
A method as set forth in claim 15, wherein said step of selectively etching said nickel layer and most of said boundary layer from said valve metal layer in the region of said pattern constituting said temperature independent resistor comprises the step of removing said photoresist mask (90) by a second exposure and developing in the region of said pattern.
Claim 19
Dependent Claim
84 words
A method as set forth in claim 16, wherein said selective etching of said nickel layer and most of said boundary layer creates a remaining boundary layer in the region of said temperature indpendent resistance pattern; further comprising the steps of dissolving said remaining boundary layer in an electrolyte in the presence of current flow thereby creating an exposed valve metal layer surface, and subsequently forming a valve metal oxide layer (9) on said exposed surface of said valve metal layer by anodic oxidation.
Claim 20
Dependent Claim
60 words
A method as set forth in claim 17, wherein said anodic oxidation is carried out with an electrolyte comprising Na 2 SO 4 and/or NH 4 Cl, and wherein a constant voltage between 1 and 10 volts is applied to said temperature independent resistor for such a time interval that said remaining boundary layer is fully dissolved in said electrolyte.
Claim 21
Dependent Claim
51 words
A method as set forth in claim 12, wherein said plurality of patterns comprises a pattern constituting electrically conductive connecting means; further comprising the step of depositing a metallic reinforcement layer on at least parts of said nickel layer in the region of said pattern constituting said electrically conductive connecting means.
Claim 22
Dependent Claim
24 words
A method as set forth in claim 19, wherein depositing said metallic reinforcement layer comprises electroplating said metallic reinforcement layer onto said nickel layer.
Claim 23
Dependent Claim
40 words
A method as set forth in claim 19, wherein said metallic reinforcement layer is a soft solder layer (6); and wherein said soft solder layer is deposited by immersion of said substrate with said three-layer system in liquid soft solder.
Claim 24
Dependent Claim
53 words
A method as set forth in claim 12, wherein said plurality of patterns comprises a pattern constituting a temperature-dependent resistor. further comprising the step of printing a conductive-plastic resistor (17) on parts of said nickel layer in the region of said pattern constituting said temperature-dependent resistor and on exposed portions of said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-11-08 | 1986-05-10 | 1986-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-11-08 | 1990-05-10 | 1990-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-11-08 | 1994-05-10 | 1994-11-09 | $7700.00 | Window Closed / Lapsed |