Low voltage nonvolatile memory device

Claim 2

An avalanche-written semiconductor memory device comprising: a semiconductive substrate of a first conductivity type; a charge storage gate structure formed on said substrate and having at least a memory portion; a first relatively thin surface-adjacent substrate region having a first, relatively high concentration of at least about 10 18 per cubic centimeter of impurities of the first conductivity type and having a predetermined thickness, said first region extending along the length of the memory portion of the gate structure; a second substrate region beneath said first region and having a second, relatively low concentration of impurities of the first conductivity type; said gate structure further including a gate electrode for applying a write voltage across the first surface-adjacent substrate region to thereby form in said first substrate region an inverted region and an underlying depletion region of a thickness substantially less than said first substrate region thickness; and an impurity region of a second conductivity type formed in said substrate for applying a control voltage between said inverted region and said second substrate region causing avalanche breakdown of said depletion region and thereby providing charges to write said device by transfer of said charges to said gate structure.

Claim 3

The semiconductor memory device of claim 1 wherein the substrate and the substrate regions are p type or n type and the first and the second substrate regions are p + and p - or n + and n - , respectively.

Claim 4

The semiconductor memory device of claim 1 wherein the first relatively thin surface-adjacent substrate region is approximately 1500 Angstroms thick.

Claim 5

The semiconductor memory device of claim 3 wherein said write voltage is in the range (5-12) volts and said control voltage is less than or equal to 5 volts.

Claim 6

The semiconductor memory device of claim 1 wherein said impurity region is either a source or drain.

Claim 7

A low voltage avalanche write semiconductor memory device comprising: a conductive p-type substrate having a concentration of 10 15 per cubic centimeter and having spaced-apart n-type source and drain therein; a charge storage gate structure overlying the substrate between said source and said drain and comprising a layer of silicon dioxide including a memory oxide portion within the range approximately 10-60 Angstroms thick formed on the substrate over at least a section of the substrate between said source and said drain and a layer of silicon nitride about 400 Angstroms thick formed over the layer of silicon dioxide; a surface-adjacent substrate region approximately 1500 Angstroms thick extending beneath the memory oxide portion and having a p-type impurity concentration of approximately 2×10 18 per cubic centimeter; said gate structure further including a conductive gate electrode formed over the silicon nitride for applying a write voltage across said surface-adjacent substrate region to thereby form a channel inversion in said surface-adjacent substrate region and an underlying depletion region in said surface-adjacent region, said depletion region being of a thickness substantially less than 1500 Angstroms; and at least one of said source and said drain being suitable for applying a control voltage between said surface-adjacent substrate region and the underlying substrate and thereby across the depletion region, causing avalanche breakdown of said depletion region and thereby providing charges to write said device by transfer of said charges to said gate structure.

Claim 8

A low voltage avalanche write semiconductor memory device comprising: a conductive p-type substrate having a concentration of 10 15 per cubic centimeter and having spaced-apart n-type source and drain therein; a charge storage gate structure overlying the substrate between said source and said drain and comprising a layer of silicon dioxide including a memory oxide portion within the range approximately 10-60 Angstroms thick formed on the substrate over at least a section of the substrate between said source and said drain and a layer of silicon nitride about 400 Angstroms thick formed over the layer of silicon dioxide; a surface-adjacent substrate region approximately 1500 Angstroms thick extending beneath the memory oxide portion and having a p-type impurity concentration of approximately 2×10 18 per cubic centimeter; said gate structure further including a conductive gate electrode formed over the silicon nitride for applying a write voltage across said surface-adjacent substrate region to thereby form a channel inversion in said surface-adjacent substrate region and an underlying depletion region in said surface-adjacent region, said depletion region being of a thickness substantially less than 1500 Angstroms; and at least one of said source and said drain being suitable for applying a control voltage between said surface-adjacent substrate region and the underlying substrate and thereby across the depletion region, causing avalanche breakdown of said depletion region and thereby providing charges to write said device by transfer of said charges to said gate structure.

Claim 9

The semiconductor memory device of claim 6, including a relatively thick non-memory oxide portion over the channel region and adjacent at least one of the source and the drain.

Claim 10

The semiconductor memory device of claim 6, wherein the memory oxide portion spans the length of the channel.

Claim 11

The memory device of claim 7 or 8 wherein the gate structure includes a gate electrode of one of aluminum, aluminum alloy, or polysilicon.