Non-volatile long memory for fast signals

Claim 2

A non-volatile, long memory for fast signals, comprising at least a first storage stage, comprising a capacitor (C) with two terminals (P and Q) and a diode (D) having two terminals (U and P); a second storage stage with an MIIS element (E); means for storing said fast signal in said first stage by the accumulation of a quantity of electric charges which are a function of said fast signal during a time at least equal to the time for storing a signal in said second stage, said storage in said second stage being done by means of the accumulation at least of a fraction of said quantity of charges at the terminals of the MIIS element.

Claim 3

A memory as claimed in claim 1, wherein said diode (D) and said capacitor (C) are connected in series at the first terminal (P) of said capacitor (C) and of said diode, said fast signal (V s ) being applied between the second teminal (U) of said diode and the second terminal (Q) of said capacitor, which are the terminals of said first stage, said second stage being connected to the terminals (P and Q) of said capacitor (C).

Claim 4

A memory as claimed in claim 1, wherein said diode (D) and said capacitor (C) are connected in series at the first terminal (P) of said capacitor and of said diode, their other termnals (U and Q) forming the terminals of said first stage, said first stage further comprising a further capacitor (C 1 ) and a switch (T), said further capacitor (C 1 ) being connected between the first terminal (P) of said capacitor (C) and said switch (T), said fast signal (V s ) being applied between the second terminal (Q) of the capacitor (C), which forms the second terminal of the first stage, and said switch (T), said second stage being connected in parallel to terminals (P and Q) of said capacitor (C), the storing in said first stage being obtained by the application of a write signal (V e ) to terminals (U and Q) of said first stage, and the reading of the signal stored in said second stage being obtained between said switch (T) and said second terminal (Q) of the capacitor (C).

Claim 5

A memory as claimed in claim 1, wherein said diode (D) and said capacitor (C) are connected in series at the first terminal (P) of said capacitor and of said diode, their other terminals (U and Q) forming the terminals of said first stage, the latter further comprising a switch (T) and a further capacitor (C 1 ), connected between the first terminals (P) of said capacitor (C) and said switch (T), said fast signal (V s ) being applied between the second terminal (Q) of said capacitor (C), which forms the second terminal of said first stage, and said switch (T), the second stage being connected in parallel to the terminals (U and P) of said diode (D), the storing in said first stage being obtained by the application of a write signal (V e ) between the terminals (U and Q) of said first stage and the reading of the signal stored in second stage being obtained between said switch (T) and said second terminal (Q) of said capacitor (C).

Claim 6

A memory as claimed in claim 3, wherein said first stage further comprises a voltage source (E 1 ) for polarizing said diode (D), connected in series with the latter.

Claim 7

A memory as claimed in claim 3, further comprising an auxiliary assembly formed by a voltage source (V a ) in series with a capacitor (C a ) connected between the terminals (P and Q) of said capacitor (C).

Claim 8

A memory as claimed in claim 3, further comprising an auxiliary assembly formed by a voltage source (V a ) in series with a capacitor (C a ) connected between the terminals of a third capacitor (C a3 ) which is connected between the first terminal (U) of the first stage and the said diode (D).

Claim 9

A memory as claimed in claim 1, wherein said second stage further comprises a resistor (R) in series with the MIIS element (E).

Claim 10

A memory as claimed in claim 1, wherein said capacitor (C) is formed by said MIIS element (E).

Claim 11

A memory as claimed in claim 1, formed by a semiconductor substrate (13) covered with a first insulating layer (14) except in an area of said substrate (13) which is covered with a metallic layer (15) that forms with said substrate (13) a Schottky junction, said first insulating layer (14) and said metallic layer (15) being covered with a layer of semiconductor material (16) bearing a connectiom (P) which forms the first terminal of said capacitor (C), said semiconductor layer (16) being convered with a second insulating layer (17) containing an area (20) of traps for charge carriers right above said metallic layer (15), said second insulating layer (17) being covered with a conducting layer (19), which forms the second terminal (Q) of said capacitor (C).

Claim 12

A memory as claimed in claim 1, formed by a semiconductor substrate (13) covered with a first insulating layer (14), except in an area of said substrate which is covered with a metallic layer (15) forming with said substrate (13) a Schottky junction, said first insulating layer (14) and said metallic layer (15) being covered with a layer of semiconductor material (23) bearing a connection (P), which forms the first terminal of said capacitor (C), said semiconductor layer (23) being covered with a second insulating layer (17) containing an area (24) of traps for charge carriers placed in ring fashion around said metallic layer (15), said second insulating layer (17) being covered with a conducting layer (19) above said metallic layer (15) and said trap area (24), which forms the second terminal (Q) of said capacitor (C).

Claim 13

A memory as claimed in claim 10, further comprising a further conducting layer (18) on said second insulating layer, not in contact with said conducting layer (19), forming with said second insulating layer (17) and said semiconductor layer (16) an auxiliary capacitor (C a ).

Claim 14

A memory as claimed in claim 11, further comprising a further conducting layer (18) on said second insulating layer, not in contact with said conducting layer (19), forming with said second insulating layer (17) and said semiconductor layer (16) an auxiliary capacitor (C a )

Claim 15

A memory as claimed in claim 4, formed by a semiconductor substrate (27, 28) having on its lower surface a first insulating layer (25) covered with a first conducting layer (26) which forms the second terminal (Q) of said capacitor (C), said substrate having on its upper surface a second insulating layer (14), except in an area of the substrate which is covered with a metallic layer (15) that forms with said substrate a Schottky junction, said second insulating layer (14) having an area (24) of traps for charge carriers, placed in ring fashion around said metallic layer (15), and having on the one hand, a layer of semiconductor material (23) above said trap area (24) and said metallic mayer (15) and, on the other, a second conducting layer (30), which is not in contact with said semiconductor layer (23) and forms a connection joined to said switch (T), said semiconductor layer (23) being covered in succession with a third insulating layer (17) and a third metallic layer (19) forming the first terminal of said first stage.

Claim 16

A memory as claimed in claim 4, comprising: a piezoelectric substrate (34) on which elastic waves may be propagated that represent the said fast signal (V s ), the lower surface of said substrate (34) being covered with an electrode (35) forming the second terminal (Q) of said capacitor (C), a semiconductor substrate (39) placed opposite the upper surface of said piezoelectric substrate (34), that has a connection forming the first terminal of said first stage and on its lower surface an insulating layer (37) except in areas of the semiconductor substrate (39) which are each covered with a metallic layer (40) that forms with said semiconductor substrate (39) a Schottky junction, said insulating layer (37) having an area (38) of traps for charge carriers, said metallic layers (40) being covered with a semiconductor layer (36); reading being carried out between said semiconductor substrate (39) and said electrode (35) using an elastic read wave.

Claim 17

A memory as claimed in claim 10, wherein said semiconductor substrate is formed of type N silicon, said insulating layers by silicon oxide, said semiconductor layer by polycrystalline silicon, said trap areas for charge carriers being made by an insulating layer with ion implantation therein.

Claim 18

A memory as claimed in claim 11, wherein said semiconductor substrate is formed of type N silicon, said insulating layers by silicon oxide, said semiconductor layer by polycrystalline silicon, said trap areas for charge carriers being made by an insulating layer with ion implantation therein.

Claim 19

A memory as claimed in claim 15, wherein said semiconductor substrate is formed of type N silicon, said insulating layers by silicon oxide, said semiconductor layer by polycrystalline silicon, said trap areas for charge carriers being made by an insulating layer with ion implantation therein.

Claim 20

A memory as claimed in claim 15, wherein said semiconductor substrate is formed of type N silicon, said insulating layers by silicon oxide, said semiconductor layer by polycrystalline silicon, said trap areas for charge carriers being made by an insulating layer with ion implantation therein.