EP0299185A2
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Thin film field effect transistor
Assignee: International Business Machines Corp
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Filing: 1988-05-31
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Granted: —
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Expires: 2008-05-31
Abstract
Abstract A thin film transistor that includes a substrate (1); gate electrode (2); thin film semiconductor (4) insulated from the gate electrode (2); and a bias control electrode (9) is provided. The bias control electrode (9) is a p-n junction or a Schottky barrier that contacts the thin film semiconductor (4).
Inventors
- 👤 Marc H. Brodsky
- 👤 Frank F. Fang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 16:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/875; H10D30/83; H10D30/832
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
72 words
A thin film field effect transistor comprising a substrate (1); gate electrode (2); a thin film semiconductor material (4) insulated from said gate electrode (2); and a bias control electrode (9) that forms at least one of a p-n junction and a Schottky barrier contacting said thin film semiconductor material (4) and wherein said thin film semiconductor material (4) is located intermediate said gate electrode (2) and said bias control electrode (9).
Claim 2
Dependent Claim
72 words
A thin film field effect transistor comprising a substrate (1); gate electrode (2); a thin film semiconductor material (4) insulated from said gate electrode (2); and a bias control electrode (9) that forms at least one of a p-n junction and a Schottky barrier contacting said thin film semiconductor material (4) and wherein said thin film semiconductor material (4) is located intermediate said gate electrode (2) and said bias control electrode (9).
Claim 3
Dependent Claim
20 words
The thin film field effect transistor of claim 1 wherein said gate electrode (9) is located adjacent said substrate (1).
Claim 4
Dependent Claim
21 words
The thin film field effect transistor of claim 1 wherein said bias control electrode (9) is located adjacent said substrate (1).
Claim 5
Dependent Claim
17 words
The thin film field effect transistor of claim 1 or 2 wherein said substrate (1) is glass.
Claim 6
Dependent Claim
25 words
The thin film field effect transistor of claims 1 to 4 wherein said semiconductor material (4) is polycrystalline silicon, amorphous silicon, or hydrogenated amorphous silicon.
Claim 7
Dependent Claim
20 words
The thin film field effect transistor of claims 1 to 5 wherein said bias control electrode is a p-n junction.
Claim 8
Dependent Claim
18 words
The thin film field effect transistor of claims 1 to 6 wherein said gate electrode is a metal.
Claim 9
Dependent Claim
17 words
The thin film field effect transistor of claim 7 wherein said gate electrode is aluminum or chromium.
Claim 10
Dependent Claim
37 words
The thin film field effect transistor of claims 1 to 8 wherein said thin film semiconductor material (4) is insulated from said gate (2) electrode by a layer (3) of silicon dioxide, or silicon nitride, or both.
References Cited (Backward Citations)
No citation records indexed.
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