US4968641A
Expired / Lapsed
US
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Method for formation of an isolating oxide layer
Assignee: STMicroelectronics NV
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Filing: 1989-06-22
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Granted: 1990-11-06
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Expires: 2009-06-22
Abstract
Abstract In a method for the formation of an isolating oxide layer on a silicon substrate, an anti-nitridation layer is formed on a silicon substrate at locations where isolating oxide is desired. The anti-nitridation layer has openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired. A thin silicon nitride layer is selectively grown at the locations where isolating oxide is not desired by nitridation of the exposed silicon substrate. Isolating oxide is then selectively grown at the locations where isolating oxide is desired. The thin silicon nitride layer inhibits oxide growth at the locations where isolating oxide is not desired. The method reduces "bird's beak" formation and is particularly applicable to high density IGFET devices.
Inventors
- 👤 Alexander Kalnitsky
- 👤 Sing Pin Tay
- 👤 Joseph P. Ellul
- 👤 Roger S. Abbott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S438/00; Y10S438/911
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
115 words
A method for the formation of an isolating oxide layer on a silicon substrate, comprising: forming a silicon dioxide anti-nitridation layer on a silicon substrate at locations where isolating oxide is desired, said anti-nitridation layer having openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired, the silicon substrate being free from buffer oxide; selectively growing a thin silicon nitride layer at the locations where isolating oxide is not desired by thermal nitridation of the exposed silicon substrate; and selectively growing an isolating oxide layer at the locations where isolating oxide is desired, the thin silicon nitride layer inhibiting oxide growth at the locations where isolating oxide is not desired.
Claim 2
Independent Claim
115 words
A method for the formation of an isolating oxide layer on a silicon substrate, comprising: forming a silicon dioxide anti-nitridation layer on a silicon substrate at locations where isolating oxide is desired, said anti-nitridation layer having openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired, the silicon substrate being free from buffer oxide; selectively growing a thin silicon nitride layer at the locations where isolating oxide is not desired by thermal nitridation of the exposed silicon substrate; and selectively growing an isolating oxide layer at the locations where isolating oxide is desired, the thin silicon nitride layer inhibiting oxide growth at the locations where isolating oxide is not desired.
Claim 3
Dependent Claim
46 words
A method as defined in claim 1, wherein the step of forming a silicon dioxide anti-nitridation layer comprises: forming a silicon dioxide anti-nitridation layer on the silicon substrate; and preferentially removing the silicon dioxide anti-nitridation layer at the locations where an isolating oxide is not desired.
Claim 4
Dependent Claim
26 words
A method as defined in claim 2, wherein the step of preferentially removing the silicon dioxide anti-nitridation layer comprises photolithographically patterning the silicon dioxide anti-nitridation layer.
Claim 5
Dependent Claim
39 words
A method as defined in claim 1, further comprising: plasma etching said silicon substrate to remove traces of native oxide at the locations where an isolating oxide is not desired prior to selectively growing said thin silicon nitride layer.
Claim 6
Dependent Claim
30 words
A method as defined in claim 2, wherein: the step of selectively growing a thin silicon nitride layer comprises converting the silicon dioxide anti-nitridation layer to an oxynitride anti-nitridation layer.
Claim 7
Dependent Claim
26 words
A method as defined in claim 1, further comprising thickening the selectively grown silicon nitride layer by selectively depositing silicon nitride on the grown silicon nitride.
Claim 8
Dependent Claim
34 words
A method as defined in claim 1, wherein the step of selectively growing an isolating oxide layer comprises inducing oxygen to penetrate the anti-nitridation layer to oxidize the silicon substrate under the anti-nitridation layer.
Claim 9
Dependent Claim
58 words
A method as defined in claim 1, further comprising: preferentially removing the anti-nitridation layer to expose the silicon substrate at the locations where an isolating oxide is desired after selectively forming the thin silicon nitride layer and before selectively growing an isolating oxide layer; and selectively growing the isolating oxide layer by oxidation of the exposed silicon substrate.
Claim 10
Dependent Claim
41 words
A method as defined in claim 8, further comprising diffusing channel stop impurities into the exposed silicon substrate at selected locations where an isolating oxide layer is desired after removing the anti-nitridation layer and before selectively growing the isolating oxide layer.
Claim 11
Dependent Claim
74 words
A method as defined in claim 9, wherein the step of diffusing channel stop impurities comprises: depositing doped glass on the silicon nitride layer and on the exposed silicon substrate; removing the doped glass from the silicon substrate where diffusion of channel stop impurities is not desired; heating the substrate, the silicon nitride layer and the doped glass to drive impurities from the doped glass into the silicon substrate; and removing the doped glass.
Claim 12
Dependent Claim
28 words
A method as defined in claim 9, wherein the silicon nitride layer acts as a diffusion barrier during diffusion of channel stop impurities into the exposed silicon substrate.
Claim 13
Dependent Claim
21 words
A method as defined in claim 1, further comprising removing the silicon nitride layer after selectively growing the isolating oxide layer.
Claim 14
Dependent Claim
31 words
A method as defined in claim 1, wherein the step of growing a thin silicon nitride layer comprises growing a nitride layer to a thickness between 5 nm and 20 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |